A Design Method of Communication Disturbance Observer for Time-Delay Compensation, Taking the Dynamic Property of Network Disturbance Into Account von Natori, K., Ohnishi, K.

Volltext

Compact Modeling of Ballistic Nanowire MOSFETs von Natori, K.

Volltext

Stability Analysis and Practical Design Procedure of Time Delayed Control Systems With Communication Disturbance Observer von Natori, K., Oboe, R., Ohnishi, K.

Volltext

P-198Multiple neoplasms consist of gastric cancer and hematological malignancy von Natori, K, Ishihara, S, Nagase, D, Mitsui, Y, Sakai, A, Kato, M, Arai, K, Kuraishi, Y, Izumi, H

Volltext

P-113Multiple neoplasms including hematological malignancies and esophageal cancer von Natori, K, Nagase, D, Ishihara, S, Mitsui, Y, Sakai, A, Kato, M, Arai, K, Kuraishi, Y, Izumi, H

Volltext

P-114Non-Hodgkin's lymphoma that diagnosed from gastrointestinal biopsy von Natori, K, Ishihara, S, Nagase, D, Mitsui, Y, Sakai, A, Kato, M, Arai, K, Kuraishi, Y, Izumi, H

Volltext

Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain von Tuokedaerhan, K., Kakushima, K., Kataoka, Y., Nishiyama, A., Sugii, N., Wakabayashi, H., Tsutsui, K., Natori, K., Iwai, H.

Volltext

Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer von Dou, C., Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., Iwai, H.

Volltext

Interface and electrical properties of Tm2O3 gate dielectrics for gate oxide scaling in MOS devices von Kouda, M., Kawanago, T., Ahmet, P., Natori, K., Hattori, T., Iwai, H., Kakushima, K., Nishiyama, A., Sugii, N., Tsutsui, K.

Volltext

La2O3/In0.53Ga0.47As metal–oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode von Zadeh, D.H., Oomine, H., Suzuki, Y., Kakushima, K., Ahmet, P., Nohira, H., Kataoka, Y., Nishiyama, A., Sugii, N., Tsutsui, K., Natori, K., Hattori, T., Iwai, H.

Volltext

High-field transport in semiconductors by transmission formalism von Natori, K.

Volltext

A resistive switching device based on breakdown and anodic reoxidization of thin SiO2 on Si-based electrodes using CeOx buffer layer von Hadi, M S, Kano, S, Kakushima, K, Kataoka, Y, Nishiyama, A, Sugii, N, Wakabayashi, H, Tsutsui, K, Natori, K, Iwai, H

Volltext

Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process von Kawanago, T., Suzuki, T., Lee, Y., Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., Iwai, H.

Volltext

Ballistic MOSFET reproduces current-voltage characteristics of an experimental device von Natori, K.

Volltext

Valence number transition and silicate formation of cerium oxide films on Si(100) von Mamatrishat, M., Kouda, M., Kakushima, K., Nohira, H., Ahmet, P., Kataoka, Y., Nishiyama, A., Tsutsui, K., Sugii, N., Natori, K., Hattori, T., Iwai, H.

Volltext

Compact Modeling of Quasi-Ballistic Silicon Nanowire MOSFETs von Natori, K.

Volltext

P91-6 T-DXd for HER2-low expressing cases breast cancer at our hospital von Noguchi, E., Shimizu, Y., Nogami, M., Tsukada, H., Natori, K., Aoyama, K., Akashi-Tanaka, S.

Volltext

Time-Delay Compensation by Communication Disturbance Observer for Bilateral Teleoperation Under Time-Varying Delay von Natori, K., Tsuji, T., Ohnishi, K., Hace, A., Jezernik, K.

Volltext

Physical and electrical properties of ultra-thin nickel silicide Schottky diodes on Si (100) von Tamura, Y, Yoshihara, R, Kakushima, K, Nohira, H, Nakatsuka, O, Ahmet, P, Kataoka, Y, Nishiyama, A, Sugii, N, Tsutsui, K, Natori, K, Hattori, T, Iwai, H

Volltext

Cross-reactivity among sapovirus recombinant capsid proteins von Hansman, G.S, Natori, K, Oka, T, Ogawa, S, Tanaka, K, Nagata, N, Usahijima, H, Takeda, N, Katayama, K

Volltext