Invention of the injection laser at IBM: personal recollections von Nathan, Marshall I

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Hydrostatic pressure dependence of charge carrier transport in single-crystal rubrene devices von Rang, Zhenlin, Nathan, Marshall I., Ruden, P. Paul, Podzorov, Vitaly, Gershenson, Michael E., Newman, Christopher R., Frisbie, C. Daniel

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Hydrostatic-pressure dependence of organic thin-film transistor current versus voltage characteristics von Rang, Zhenlin, Nathan, Marshall I., Ruden, P. Paul, Chesterfield, Reid, Frisbie, C. Daniel

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Hydrostatic-pressure dependence of the photoconductivity of single-crystal pentacene and tetracene von Rang, Zhenlin, Haraldsson, Anders, Kim, Dong M., Ruden, P. Paul, Nathan, Marshall I., Chesterfield, Reid J., Frisbie, C. Daniel

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Invention of the injection laser at IBM: personal recollectionsThe recollections given in this article are based on an earlier account of events published in [28] von Nathan, Marshall I

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Persistent photoconductivity in AlGaAs/GaAs modulation doped layers and field effect transistors: A review von Nathan, Marshall I.

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Pentacene organic field-effect transistor on metal substrate with spin-coated smoothing layer von Jin, Yanbo, Rang, Zhenlin, Nathan, Marshall I., Ruden, P. Paul, Newman, Christopher R., Frisbie, C. Daniel

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Hydrostatic pressure dependence of charge carrier transportin single-crystal rubrene devices von Rang, Zhenlin, Nathan, Marshall I., Ruden, P. Paul, Podzorov, Vitaly, Gershenson, Michael E., Newman, Christopher R., Frisbie, C. Daniel

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Room-temperature electron trapping in Al0.35Ga0.65As/GaAs modulation-doped field-effect transistors von NATHAN, M. I, MOONEY, P. M, SOLOMON, P. M, WRIGHT, S. L

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Raman spectra of glassy carbon von Nathan, Marshall I., Smith, John E., Tu, K. N.

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Hooray for 1998 Nobel in Physics, But What About Fowler et al.? von Nathan, Marshall I.

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Advances from Japan von Nathan, Marshall I.

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Time dependence of the reflectivity of Si at 633 and 488 nm during pulsed laser annealing von Nathan, Marshall I., Hodgson, R. T., Yoffa, Ellen J.

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Recombination radiation and stimulated emission in GaAs von Nathan, Marshall I.

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Current Voltage Characteristics of Germanium Tunnel Diodes von Nathan, Marshall I.

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Oscillations in GaAs Spontaneous Emission in Fabry-Perot Cavities von Nathan, Marshall I., Fowler, Alan B., Burns, Gerald

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Invention of the injection lasers at IBM von Nathan, Marshall I

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RECOMBINATION RADIATION IN GaAs BY OPTICAL AND ELECTRICAL INJECTION von Nathan, Marshall I., Burns, Gerald

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A gallium arsenide ballistic transistor? von Nathan, Marshall I., Heiblum, Mordehai

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Invention of the injection laser at IBM von Nathan, M.

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