Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation von Yuhao Zhang, Zhihong Liu, Tadjer, Marko J., Min Sun, Piedra, Daniel, Hatem, Christopher, Anderson, Travis J., Luna, Lunet E., Nath, Anindya, Koehler, Andrew D., Okumura, Hironori, Jie Hu, Xu Zhang, Xiang Gao, Feigelson, Boris N., Hobart, Karl D., Palacios, Tomas

Volltext

Electrical and Low Frequency Noise Characterization of Graphene Chemical Sensor Devices Having Different Geometries von Nah, JongBong, Perkins, Frank Keith, Lock, Evgeniya H, Nath, Anindya, Boyd, Anthony, Myers-Ward, Rachael L, Gaskill, David Kurt, Osofsky, Michael, Rao, Mulpuri V

Volltext

Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates von Anderson, Travis J., Koehler, Andrew D., Tadjer, Marko J., Hite, Jennifer K., Nath, Anindya, Mahadik, Nadeemullah A., Aktas, Ozgur, Odnoblyudov, Vladimir, Basceri, Cem, Hobart, Karl D., Kub, Francis J.

Volltext

Vertical GaN Junction Barrier Schottky Diodes von Koehler, Andrew D., Anderson, Travis J., Tadjer, Marko J., Nath, Anindya, Feigelson, Boris N., Shahin, David I., Hobart, Karl D., Kub, Francis J.

Volltext

Ultra-broadband photodetectors based on epitaxial graphene quantum dots von El Fatimy, Abdel, Nath, Anindya, Kong, Byoung Don, Boyd, Anthony K., Myers-Ward, Rachael L., Daniels, Kevin M., Jadidi, M. Mehdi, Murphy, Thomas E., Gaskill, D. Kurt, Barbara, Paola

Volltext

Probing the hydrothermal performance of corrugated channels: A numerical scrutiny von Nath, Anindya, Dey, Hrishav, Pati, Sukumar

Volltext

Microwave Annealing of Very High Dose Aluminum-Implanted 4H-SiC von Nipoti, Roberta, Nath, Anindya, Rao, Mulpuri V, Hallén, Anders, Carnera, Alberto, Tian, Yong-Lai

Volltext

Electrothermal Evaluation of AlGaN/GaN Membrane High Electron Mobility Transistors by Transient Thermoreflectance von Tadjer, Marko J., Kub, Fritz J., Raad, Peter E., Komarov, Pavel L., Hobart, Karl D., Feygelson, Tatyana I., Koehler, Andrew D., Anderson, Travis J., Nath, Anindya, Pate, Bradford

Volltext

Ion Implanted Lateral p+-i-n+ Diodes on HPSI 4H-SiC von Nipoti, Roberta, Roncaglia, Alberto, Bonafe, Filippo, Nath, Anindya, Rao, Mulpuri V., Moscatelli, Francesco, de Nicola, Pietro, Mancarella, Fulvio

Volltext

Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers von Nath, Anindya, Rao, Mulpuri V., Tamarri, Fabrizio, Tian, Yong Lai, Moscatelli, Francesco, de Nicola, Pietro, Nipoti, Roberta

Volltext

Electrochemically Prepared Polycrystalline Copper Surface for the Growth of Hexagonal Boron Nitride von Sridhara, Karthik, Feigelson, Boris N., Wollmershauser, James A., Hite, Jennifer K., Nath, Anindya, Hernández, Sandra C., Fuhrer, Michael S., Gaskill, D. Kurt

Volltext

Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering von Anderson, Virginia R., Nepal, Neeraj, Johnson, Scooter D., Robinson, Zachary R., Nath, Anindya, Kozen, Alexander C., Qadri, Syed B., DeMasi, Alexander, Hite, Jennifer K., Ludwig, Karl F., Eddy, Charles R.

Volltext

Impact of surface treatments on high-κ dielectric integration with Ga-polar and N-polar GaN von English, Caroline R., Wheeler, Virginia D., Garces, Nelson Y., Nepal, Neeraj, Nath, Anindya, Hite, Jennifer K., Mastro, Michael A., Eddy, Charles R.

Volltext

Narrow plasmon resonances enabled by quasi-freestanding bilayer epitaxial graphene von Daniels, Kevin M, Jadidi, M Mehdi, Sushkov, Andrei B, Nath, Anindya, Boyd, Anthony K, Sridhara, Karthik, Drew, H Dennis, Murphy, Thomas E, Myers-Ward, Rachael L, Gaskill, D Kurt

Volltext

High Voltage GaN Lateral Photoconductive Semiconductor Switches von Koehler, Andrew D., Anderson, Travis J., Khachatrian, Ani, Nath, Anindya, Tadjer, Marko J., Buchner, Stephen P., Hobart, Karl D., Kub, Fritz J.

Volltext

Ion Implanted Lateral p super(+)-i-n super(+) Diodes on HPSI 4H-SiC von Nipoti, Roberta, Moscatelli, Francesco, Roncaglia, Alberto, Bonafe, Filippo, Mancarella, Fulvio, de Nicola, Pietro, Nath, Anindya, Rao, Mulpuri V

Volltext

Challenges to graphene growth on SiC(0001‾): Substrate effects, hydrogen etching and growth ambient von Robinson, Zachary R., Jernigan, Glenn G., Currie, Marc, Hite, Jennifer K., Bussmann, Konrad M., Nyakiti, Luke O., Garces, Nelson Y., Nath, Anindya, Rao, Mulpuri V., Wheeler, Virginia D., Myers-Ward, Rachael L., Wollmershauser, James A., Feigelson, Boris N., Eddy, Charles R., Gaskill, D. Kurt

Volltext

Microwave Annealing of Al super(+) Implanted 4H-SiC: Towards Device Fabrication von Nath, Anindya, Parisini, Antonella, Tian, Yong Lai, Rao, Mulpuri V, Nipoti, Roberta

Volltext

VERTICALLY STACKED DIODE-TRIGGER SILICON CONTROLLED RECTIFIER von Nath, Anindya, Mitra, Souvick

Volltext bestellen

Vertically stacked diode-trigger silicon controlled rectifier von Nath, Anindya, Mitra, Souvick

Volltext bestellen