Optical studies of ferroelectric and ferroelastic domain walls von Nataf, G. F., Guennou, M.

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Domain-wall engineering and topological defects in ferroelectric and ferroelastic materials von Nataf, G. F., Guennou, M., Gregg, J. M., Meier, D., Hlinka, J., Salje, E. K. H., Kreisel, J.

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Raman signatures of ferroic domain walls captured by principal component analysis von Nataf, G F, Barrett, N, Kreisel, J, Guennou, M

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Low energy electron imaging of domains and domain walls in magnesium-doped lithium niobate von Nataf, G. F., Grysan, P., Guennou, M., Kreisel, J., Martinotti, D., Rountree, C. L., Mathieu, C., Barrett, N.

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Stacking faults blocking process in (1 1 −2 2) semipolar GaN growth on sapphire using asymmetric lateral epitaxy von Kriouche, N., Vennéguès, P., Nemoz, M., Nataf, G., De Mierry, P.

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Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography von Bengoechea-Encabo, A., Albert, S., Sanchez-Garcia, M.A., López, L.L., Estradé, S., Rebled, J.M., Peiró, F., Nataf, G., de Mierry, P., Zuniga-Perez, J., Calleja, E.

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Temperature quenching of photoluminescence intensities in undoped and doped GaN von Leroux, M., Grandjean, N., Beaumont, B., Nataf, G., Semond, F., Massies, J., Gibart, P.

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Semipolar GaN films on patterned r -plane sapphire obtained by wet chemical etching von de Mierry, P., Kriouche, N., Nemoz, M., Chenot, S., Nataf, G.

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Improved semipolar ( 11 2 ¯ 2 ) GaN quality using asymmetric lateral epitaxy von de Mierry, P., Kriouche, N., Nemoz, M., Nataf, G.

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Defect structure in heteroepitaxial semipolar () (Ga, Al)N von Arroyo Rojas Dasilva, Y, Chauvat, M P, Ruterana, P, Lahourcade, L, Monroy, E, Nataf, G

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Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks von Bethoux, J.-M., Vennéguès, P., Natali, F., Feltin, E., Tottereau, O., Nataf, G., De Mierry, P., Semond, F.

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Efficient blocking of planar defects by prismatic stacking faults in semipolar ( 11 2 ¯ 2 ) -GaN layers on m-sapphire by epitaxial lateral overgrowth von Lacroix, B., Chauvat, M. P., Ruterana, P., Nataf, G., de Mierry, P.

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Growth and characterization of polar (0001) and semipolar (11−22) InGaN/GaN quantum dots von Das, A., Sinha, P., Kotsar, Y., Kandaswamy, P.K., Dimitrakopulos, G.P., Kehagias, Th, Komninou, Ph, Nataf, G., De Mierry, P., Monroy, E.

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Growth of freestanding GaN using pillar-epitaxial lateral overgrowth from GaN nanocolumns von Bougrioua, Z., Gibart, P., Calleja, E., Jahn, U., Trampert, A., Ristic, J., Utrera, M., Nataf, G.

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Elastic anomalies associated with domain switching in BaTiO3 single crystals under in situ electrical cycling von Pesquera, D., Casals, B., Thompson, J. E., Nataf, G. F., Moya, X., Carpenter, M. A.

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Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth von Kriouche, N, Leroux, M, Vennéguès, P, Nemoz, M, Nataf, G, de Mierry, P

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Demonstration of semipolar (11-22) InGaN/GaN blue-green light emitting diode von Gühne, T., DeMierry, P., Nemoz, M., Beraudo, E., Chenot, S., Nataf, G.

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Dense and single-phase KTaO3 ceramics obtained by spark plasma sintering von Féger, L., Giovannelli, F., Vats, G., Alves, J., Pignon, B., Salje, E.K.H., Monot-Laffez, I., Nataf, G.F.

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Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth von Kriouche, N, Leroux, M, Vennéguès, P, Nemoz, M, Nataf, G, de Mierry, P

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Influence of ferroelastic domain walls on thermal conductivity von Limelette, P, M El Kamily, Aramberri, H, Giovannelli, F, Royo, M, Rurali, R, Monot-Laffez, I, Íñiguez, J, Nataf, G F

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