High performance MIM capacitor using anodic alumina dielectric von Hourdakis, E., Nassiopoulou, A.G.

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Optimized Porous Si Microplate Technology for On-Chip Local RF Isolation von Zacharatos, F., Contopanagos, H.F., Nassiopoulou, A.G.

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A Silicon Thermal Accelerometer Without Solid Proof Mass Using Porous Silicon Thermal Isolation von Goustouridis, D., Kaltsas, G., Nassiopoulou, A.G.

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Planar CMOS compatible process for the fabrication of buried microchannels in silicon, using porous-silicon technology von Kaltsas, G., Pagonis, D.N., Nassiopoulou, A.G.

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Characterization of a silicon thermal gas-flow sensor with porous silicon thermal isolation von Kaltsas, G., Nassiopoulos, A.A., Nassiopoulou, A.G.

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Simple method for determining Si p-n junction depth using anodization von Hourdakis, E., Pepponi, G., Barozzi, M., Nassiopoulou, A.G.

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Structural and photoluminescence properties of thin alumina films on silicon, fabricated by electrochemistry von Kokonou, M., Nassiopoulou, A.G., Travlos, A.

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Three-dimensional vertical Si nanowire MOS capacitor model structure for the study of electrical versus geometrical Si nanowire characteristics von Hourdakis, E., Casanova, A., Larrieu, G., Nassiopoulou, A.G.

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Pb doping of In2O3 and their conversion to highly conductive PbS/In2S3−3xO3x nanowires with infra red emission von Zervos, M., Othonos, A., Gianetta, V., Nassiopoulou, A.G.

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Twenty-fold plasmon-induced enhancement of radiative emission rate in silicon nanocrystals embedded in silicon dioxide von Gardelis, S, Gianneta, V., Nassiopoulou, A.G

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Charging effects in silicon nanocrystals embedded in SiO2 films von Kouvatsos, D.N., Ioannou-Sougleridis, V., Nassiopoulou, A.G.

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Photo- and electroluminescence from nanocrystalline silicon single and multilayer structures von Photopoulos, P, Nassiopoulou, A.G, Kouvatsos, D.N, Travlos, A

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Multilevel charge storage in Si nanocrystals arranged in double-dot-layers within SiO2 von THEODOROPOULOU, M, NASSIOPOULOU, A. G

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Hydrogen catalytic oxidation reaction on Pd-doped porous silicon von Tsamis, C., Tsoura, L., Nassiopoulou, A.G., Travlos, A., Salmas, C.E., Hatzilyberis, K.S., Androutsopoulos, G.P.

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Advanced Si-based substrates for RF passive integration: Comparison between local porous Si layer technology and trap-rich high resistivity Si von Sarafis, P., Hourdakis, E., Nassiopoulou, A.G., Roda Neve, C., Ben Ali, K., Raskin, J.-P.

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Proceedings of the E-MRS 2006 Symposium C: Silicon Nanocrystals for Electronics and Sensing Applications von Nassiopoulou, A.G.

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Effect of temperature on advanced Si-based substrates performance for RF passive integration von Roda Neve, C., Ben Ali, K., Sarafis, P., Hourdakis, E., Nassiopoulou, A.G., Raskin, J.-P.

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Charge-trapping MOS memory structure using anodic alumina charging medium von Hourdakis, E., Nassiopoulou, A.G.

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Multilevel charge storage in Si nanocrystals arranged in double-dot-layers within SiO 2 von Theodoropoulou, M., Nassiopoulou, A.G.

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RF characterization and isolation properties of mesoporous Si by on-chip coplanar waveguide measurements von Contopanagos, H., Zacharatos, F., Nassiopoulou, A.G.

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