The effect of line edge roughness defect on the electronic transport properties of Boron-doped graphene nanoribbon rectifier von Golzani, Mozhgan, Poliki, Mohammad, Haji-Nasiri, Saeed

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Graphene rotational switch through vacancy defect and nitrogen doping von Poliki, Mohammad, Golzani, Mozhgan, Haji-Nasiri, Saeed

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Stability Analysis in Graphene Nanoribbon Interconnects von Nasiri, Saeed Haji, Moravvej-Farshi, Mohammad Kazem, Faez, Rahim

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Doping induced diode behavior with large rectifying ratio in graphyne nanoribbons device von Haji-Nasiri, Saeed, Fotoohi, Somayeh

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The electronic transport properties of defected bilayer sliding armchair graphene nanoribbons von Mohammadi, Amin, Haji-Nasiri, Saeed

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Electronic and transport characteristics of vacancy and nitrogen-doped graphene nanoribbon rotational switch von Poliki, Mohammad, Haji-Nasiri, Saeed

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γ-Graphyne rectifier and NDR tunable by doping, line edge roughness and twist von Golzani, Mozhgan, Poliki, Mohammad, Haji-Nasiri, Saeed

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Spin-dependent electronic transport properties of transition metal atoms doped α-armchair graphyne nanoribbons von Fotoohi, Somayeh, Haji-Nasiri, Saeed

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The Effect of Line-Edge Roughness on Electronic Transport Characteristics of a Graphene Nanoribbon Rectifier von Golzani, Mozhgan, Haji-Nasiri, Saeed

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Improving the electrical characteristics of nanoscale triple-gate junctionless FinFET using gate oxide engineering von Bousari, Nazanin Baghban, Anvarifard, Mohammad K., Haji-Nasiri, Saeed

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Transfer matrix model of multilayer graphene nanoribbon interconnects von Fotoohi, Somayeh, Haji-Nasiri, Saeed

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Time Domain and Nyquist Analysis of InGaAs-GaAs Semiconductor Self-Assembled Quantum Dot Lasers Based on Transfer Matrix Method von saeed haji-nasiri

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Electronic Conductance Modulation of Armchair Graphyne Nanoribbon by Twisting Deformation von Somayeh Fotoohi, Mansoureh Pashangpour, Saeed Haji-Nasiri

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Design of seamless graphene inverter together with its transfer matrix modeling von somayeh fotoohi, saeed haji-nasiri

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Vacancy Defects Induced Magnetism in Armchair Graphdiyne Nanoribbon von Somayeh Fotoohi, Saeed Haji Nasiri

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Impact of T-Shape Drain Doping Engineering on the Analog/RF and High-Frequency Noise Parameters of Junctionless Si/ Si0.7Ge0.3 FET: A Numerical Simulation Study von Ejlali, Rayhaneh, Vadizadeh, Mahdi, Haji-Nasiri, Saeed, Kashaniniya, Alireza, Dana, Arash

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Introduction of the structure, modeling and analysis of junctionless heterostructure Si/Si1-xGex transistor von reyhaneh ejlali, saeed haji-nasiri, alireza Kashaniniya, Arash Dana

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A Functional Study of a Bilayer Graphene Nanoribbon FET With Four Different Gate Insulators von Shamloo, Hassan, Nazari, Atefeh, Faez, Rahim, Haji-Nasiri, Saeed

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Benefitting from High-κ Spacer Engineering in Balistic Triple-Gate Junctionless FinFET- a Full Quantum Study von Bousari, Nazanin Baghban, Anvarifard, Mohammad K., Haji-Nasiri, Saeed

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A novel graphene nanoribbon field effect transistor with two different gate insulators von Akbari Eshkalak, Maedeh, Faez, Rahim, Haji-Nasiri, Saeed

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