Evaluation of displacement prediction method for mountain tunnels showing time-dependence characteristics von Uda, M, Nashimoto, Y, Isago, N

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Charge-trapping defects in Cat-CVD silicon nitride films von Umeda, T, Mochizuki, Y, Miyoshi, Y, Nashimoto, Y

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Substrate-related kink effects with a strong light-sensitivity in AlGaAs/InGaAs PHEMT von Haruyama, J., Negishi, H., Nishimura, Y., Nashimoto, Y.

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Kink effect related to the self-side-gating effect in GaAs MESFET's von Haruyama, J., Ohno, Y., Katano, H., Nashimoto, Y.

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A detailed investigation of the D-X center and other trap levels in GaAs-AlxGa1-xAs modulation-doped heterostructures grown by molecular-beam epitaxy von Dhar, S., Won-Pyo Hong, Bhattacharya, P.K., Nashimoto, Y., Feng-Yuh Juang

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Electron and hole impact ionization coefficients in GaAs-AlxGa1-xAs superlattices von JAUNG, F.-Y, DAS, U, NASHIMOTO, Y, BHATTACHARYA, P. K

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Si donor neutralization in high-purity GaAs von PAN, N, LEE, B, BOSE, S. S, KIM, M. H, HUGHES, J. S, STILLMAN, G. E, ARAI, K, NASHIMOTO, Y

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A In0.53Ga0.47As-In0.52Al0.48As single quantum well field-effect transistor von Seo, K.S., Bhattacharya, P.K., Nashimoto, Y.

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A Ku-band ultra super low-noise pseudomorphic heterojunction FET in a hollow plastic PKG von Hirokawa, T., Negishi, H., Nishimura, Y., Ichikawa, S., Tanaka, J., Kimura, T., Watanabe, K., Nashimoto, Y.

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Electron and hole impact ionization coefficients in GaAs-Al(x)Ga(1-x)As superlattices von Juang, F.-Y., Das, U., Nashimoto, Y., Bhattacharya, P. K.

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Enhancement of Reactivity in Au Etching by Pulse-Time-Modulated Cl 2 Plasma von Ohtake, Hiroto, Samukawa, Seiji, Oikawa, Hirokazu, Nashimoto, Yasunobu

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Surface kinetic aspects of Si incorporation in molecular beam epitaxial growth of GaAs von Lee, B., Szafranek, I., Stillman, G. E., Arai, K., Nashimoto, Y., Shimizu, K., Iwata, N., Sakuma, I.

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Photoemissions related to the kink effect in GaAs metal-semiconductor field-effect transistors with an Al0.2Ga0.8As/GaAs buffer layer von HARUYAMA, J, GOTO, N, NASHIMOTO, Y

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Molecular beam epitaxial growth and photoluminescence of near-ideal GaAs-AlxGa1-xAs single quantum wells von JUANG, F.-Y, NASHIMOTO, Y, BHATTACHARYA, P. K

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A In 0.53 Ga 0.47 As-In 0.52 Al 0.48 As single quantum well field-effect transistor von Seo, K.S., Bhattacharya, P.K., Nashimoto, Y.

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Electron and hole impact ionization coefficients in GaAs-Al x Ga1− x As superlattices von Juang, F-Y., Das, U., Nashimoto, Y., Bhattacharya, P. K.

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IVA-3 performance characteristics of high-quality GaAs Al x Ga 1-x As superlattice avalanche photodiodes von Juang, F.-Y., Nashimoto, Y., Bhattacharya, P.K., Dhar, S.

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IVA-3 performance characteristics of high-quality GaAs Al(x < /inf > Ga(1-x < /inf > As superlattice avalanche photodiodes von Juang, F-Y, Nashimoto, Y, Bhattacharya, P K, Dhar, S

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Novel high power AlGaAs/GaAs HFET with a field-modulating plate operated at 35 V drain voltage von Asano, K., Miyoshi, Y., Ishikura, K., Nashimoto, Y., Kuzuhara, M., Mizuta, M.

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A In(0.53)Ga(0.47)As-In(0.52)Al(0.48)As single quantum well field-effect transistor von Seo, K S, Bhattacharya, P K, Nashimoto, Y

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