Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence von Ghetmiri, Seyed Amir, Du, Wei, Margetis, Joe, Mosleh, Aboozar, Cousar, Larry, Conley, Benjamin R., Domulevicz, Lucas, Nazzal, Amjad, Sun, Greg, Soref, Richard A., Tolle, John, Li, Baohua, Naseem, Hameed A., Yu, Shui-Qing

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Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics von Tran, Huong, Du, Wei, Ghetmiri, Seyed A., Mosleh, Aboozar, Sun, Greg, Soref, Richard A., Margetis, Joe, Tolle, John, Li, Baohua, Naseem, Hameed A., Yu, Shui-Qing

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Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics von Ghetmiri, Seyed Amir, Zhou, Yiyin, Margetis, Joe, Al-Kabi, Sattar, Dou, Wei, Mosleh, Aboozar, Du, Wei, Kuchuk, Andrian, Liu, Jifeng, Sun, Greg, Soref, Richard A, Tolle, John, Naseem, Hameed A, Li, Baohua, Mortazavi, Mansour, Yu, Shui-Qing

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Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates von Du, Wei, Zhou, Yiyin, Ghetmiri, Seyed A., Mosleh, Aboozar, Conley, Benjamin R., Nazzal, Amjad, Soref, Richard A., Sun, Greg, Tolle, John, Margetis, Joe, Naseem, Hameed A., Yu, Shui-Qing

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Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx von Du, Wei, Ghetmiri, Seyed A., Conley, Benjamin R., Mosleh, Aboozar, Nazzal, Amjad, Soref, Richard A., Sun, Greg, Tolle, John, Margetis, Joe, Naseem, Hameed A., Yu, Shui-Qing

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Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection von Conley, Benjamin R, Mosleh, Aboozar, Ghetmiri, Seyed Amir, Du, Wei, Soref, Richard A, Sun, Greg, Margetis, Joe, Tolle, John, Naseem, Hameed A, Yu, Shui-Qing

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Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications von Zhou, Yiyin, Dou, Wei, Du, Wei, Pham, Thach, Ghetmiri, Seyed Amir, Al-Kabi, Sattar, Mosleh, Aboozar, Alher, Murtadha, Margetis, Joe, Tolle, John, Sun, Greg, Soref, Richard, Li, Baohua, Mortazavi, Mansour, Naseem, Hameed, Yu, Shui-Qing

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UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices von Grant, Perry C, Dou, Wei, Alharthi, Bader, Grant, Joshua M, Tran, Huong, Abernathy, G, Mosleh, Aboozar, Du, Wei, Li, Baohua, Mortazavi, Mansour, Naseem, Hameed A, Yu, Shui-Qing

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Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4  μ m long-wavelength cutoff von Conley, Benjamin R., Margetis, Joe, Du, Wei, Tran, Huong, Mosleh, Aboozar, Ghetmiri, Seyed Amir, Tolle, John, Sun, Greg, Soref, Richard, Li, Baohua, Naseem, Hameed A., Yu, Shui-Qing

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Growth and characterization of low-temperature Si1-xSnx on Si using plasma enhanced chemical vapor deposition von Banihashemian, Seyedeh Fahimeh, Grant, Joshua M, Sabbar, Abbas, Tran, Huong, Olorunsola, Oluwatobi, Ojo, Solomon, Amoah, Sylvester, Mehboudi, Mehrshad, Yu, Shui-Qing, Mosleh, Aboozar, Naseem, Hameed A

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GePb Alloy Growth Using Layer Inversion Method von Alahmad, Hakimah, Mosleh, Aboozar, Alher, Murtadha, Banihashemian, Seyedeh Fahimeh, Ghetmiri, Seyed Amir, Al-Kabi, Sattar, Du, Wei, Li, Bauhoa, Yu, Shui-Qing, Naseem, Hameed A.

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Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement von Alharthi, Bader, Grant, Joshua M., Dou, Wei, Grant, Perry C., Mosleh, Aboozar, Du, Wei, Mortazavi, Mansour, Li, Baohua, Naseem, Hameed, Yu, Shui-Qing

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Study of High-Quality GeSn Alloys Grown by Chemical Vapor Deposition towards Mid-Infrared Applications von Al-Kabi, Sattar, Ghetmiri, Seyed Amir, Margetis, Joe, Du, Wei, Mosleh, Aboozar, Dou, Wei, Sun, Greg, Soref, Richard A., Tolle, John, Li, Baohua, Mortazavi, Mansour, Naseem, Hameed A., Yu, Shui-Qing

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Structural and Optical Characteristics of GeSn Quantum Wells for Silicon-Based Mid-Infrared Optoelectronic Applications von Dou, Wei, Ghetmiri, Seyed Amir, Al-Kabi, Sattar, Mosleh, Aboozar, Zhou, Yiyin, Alharthi, Bader, Du, Wei, Margetis, Joe, Tolle, John, Kuchuk, Andrian, Benamara, Mourad, Li, Baohua, Naseem, Hameed A., Mortazavi, Mansour, Yu, Shui-Qing

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Growth and Characterization of SiGe on c-Plane Sapphire Using a Chemical Vapor Deposition System von Sabbar, Abbas, Grant, Joshua M., Grant, Perry C., Dou, Wei, Alharthi, Bader, Li, Baohua, Yurtsever, Fatma, Ghetmiri, Seyed Amir, Mortazavi, Mansour, Naseem, Hameed A., Yu, Shui-Qing, Mosleh, Aboozar, Chen, Zhong

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Investigating the plasma parameters of an Ar/O2 discharge during the sputtering of Al targets in an inverted cylindrical magnetron von Mensah, Samuel L., Gordon, Matt, Naseem, Hameed H.

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Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection von Pham, Thach, Du, Wei, Tran, Huong, Margetis, Joe, Tolle, John, Sun, Greg, Soref, Richard A, Naseem, Hameed A, Li, Baohua, Yu, Shui-Qing

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Material Characterization of Ge1−x Sn x Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications von Mosleh, Aboozar, Ghetmiri, Seyed Amir, Conley, Benjamin R., Hawkridge, Michael, Benamara, Mourad, Nazzal, Amjad, Tolle, John, Yu, Shui-Qing, Naseem, Hameed A.

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Global Modeling of Active Terahertz Plasmonic Devices von Khorrami, Mohammad Ali, El-Ghazaly, Samir, Naseem, Hameed, Shui-Qing Yu

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Enhancing the Performance of the Microwave Absorbing Materials by Using Dielectric Resonator Arrays von Al-Zoubi, Omar H., Naseem, Hameed

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