Increased static RON in GaN-on-silicon power transistors under high-side operation with floating substrate conditions von Unni, V, Kawai, H, Narayanan, E.M.S

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A New Method to Improve Tradeoff Performance for Advanced Power MOSFETs von Vershinin, K., Moens, P., Bauwens, F., Narayanan, E.M.S., Tack, M.

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A fast switching segmented anode NPN controlled LIGBT von Hardikar, S., Tadikonda, R., Sweet, M., Vershinin, K., Narayanan, E.M.S.

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Comparison of Trench Gate IGBT and CIGBT Devices for Increasing the Power Density From High Power Modules von Luther-King, N., Narayanan, E.M.S., Coulbeck, L., Crane, A., Dudley, R.

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Realizing high-voltage junction isolated LDMOS transistors with variation in lateral doping von Hardikar, S., Tadikonda, R., Green, D.W., Vershinin, K.V., Narayanan, E.M.S.

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Comparative study of drift region designs in RF LDMOSFETs von Guangjun Cao, Manhas, S.K., Narayanan, E.M.S., De Souza, M.M., Hinchley, D.

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Performance analysis of the segment npn anode LIGBT von Green, D.W., Sweet, M., Vershinin, K.V., Hardikar, S., Narayanan, E.M.S.

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Transient substrate currents in junction-isolated lateral IGBT von Hardikar, S., Green, D.W., Narayanan, E.M.S.

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Analysis of lateral IGBT with a variation in lateral doping drift region in junction isolation technology von Tadikonda, R., Hardikar, S., Green, D.W., Sweet, M., Narayanan, E.M.S.

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Experimental demonstration of an ultra-fast double gate inversion layer emitter transistor (DG-ILET) von Udrea, F., Udugampola, U.N.K., Sheng, K., McMahon, R.A., Amaratunga, G.A.J., Narayanan, E.M.S., De Souza, M.M., Hardikar, S.

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Increased static R ON in GaN‐on‐silicon power transistors under high‐side operation with floating substrate conditions von Unni, V., Kawai, H., Narayanan, E.M.S.

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Design and analysis of multichannel LIGBTs in junction isolation technology von Green, D.W., Hardikar, S., Tadikonda, R., Sweet, M., Vershinin, K.V., Narayanan, E.M.S.

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Evaluation of gate drive circuit effect in cascode GaN-based applications von Tan, Q.Y., Narayanan, E.M.S.

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Evaluation of gate drive circuit effect in cascode GaN-based applications von Tan, Q. Y., Narayanan, E. M. S.

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MOS control device concepts for AC-AC matrix converter applications: the HCD concept for high-efficiency anode-gated devices von Luther-King, N., Sweet, M., Spulber, O., Vershinin, K.V., De Souza, M.M., Narayanan, E.M.S.

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Characteristics of a 1200 V hybrid power switch comprising a Si IGBT and a SiC MOSFET von Sheikhan, A, Narayanan, E.M.S

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Innovation in power semiconductor industry: past and future von Moguilnaia, N.A., Vershinin, K.V., Sweet, M.R., Spulber, O.I., De Souza, M.M., Narayanan, E.M.S.

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Crosstalk in monolithic GaN-on-Silicon power electronic devices von Unni, V., Kawai, H., Narayanan, E.M.S.

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Evaluation of gate drive circuit effect in cascode GaN-based application von Tan, Q.Y, Narayanan, E.M.S

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A novel gate geometry for the IGBT: the trench planar insulated gate bipolar transistor (TPIGBT) von Spulber, O., Narayanan, E.M.S., Hardikar, S., De Souza, M.M., Sweet, M., Bose J.V., S.C.

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