Chemically synthesized nanowire TiO2/ZnO core-shell p-n junction array for high sensitivity ultraviolet photodetector von Dao, T D, Dang, CTT, Han, G, Hoang, C V, Yi, W, Narayanamurti, V, Nagao, T

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BEEM imaging and spectroscopy of buried structures in semiconductors von Narayanamurti, V., Kozhevnikov, M.

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Ballistic electron microscopy and spectroscopy of metal and semiconductor nanostructures von Yi, W., Stollenwerk, A.J., Narayanamurti, V.

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Size-dependent impurity activation energy in GaN nanowires von Yoon, J., Girgis, A. M., Shalish, I., Ram-Mohan, L. R., Narayanamurti, V.

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Direct observation of localized high current densities in GaN films von Brazel, E. G., Chin, M. A., Narayanamurti, V.

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Patterned growth of single-walled carbon nanotube arrays from a vapor-deposited Fe catalyst von Peng, H. B., Ristroph, T. G., Schurmann, G. M., King, G. M., Yoon, J., Narayanamurti, V., Golovchenko, J. A.

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Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition von Hansen, P. J., Strausser, Y. E., Erickson, A. N., Tarsa, E. J., Kozodoy, P., Brazel, E. G., Ibbetson, J. P., Mishra, U., Narayanamurti, V., DenBaars, S. P., Speck, J. S.

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Zero-resistance states induced by electromagnetic-wave excitation in GaAs/AlGaAs heterostructures von Mani, Ramesh G, Smet, Jürgen H, von Klitzing, Klaus, Narayanamurti, Venkatesh, Johnson, William B, Umansky, Vladimir

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Epitaxial Catalyst-Free Growth of InN Nanorods on c-Plane Sapphire von Shalish, I, Seryogin, G, Yi, W, Bao, J. M, Zimmler, M. A, Likovich, E, Bell, D. C, Capasso, F, Narayanamurti, V

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Epitaxial Catalyst-Free Growth of InN Nanorods onc-Plane Sapphire von Shalish, I, Seryogin, G, Yi, W, Bao, JM, Zimmler, MA, Likovich, E, Bell, DC, Capasso, F, Narayanamurti, V

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Nuclear spin based quantum information processing at high magnetic fields von Mani, R G, Johnson, W B, Narayanamurti, V

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Fermi-level pinning position at the Au–InAs interface determined using ballistic electron emission microscopy von Bhargava, S., Blank, H.-R., Narayanamurti, V., Kroemer, H.

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Can silicon dimers form logic gates? von Appelbaum, Ian, Wang, Tairan, Fan, Shanhui, Joannopoulos, J D, Narayanamurti, V

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Local conduction band offset of GaSb self-assembled quantum dots on GaAs von Rubin, M. E., Blank, H. R., Chin, M. A., Kroemer, H., Narayanamurti, V.

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High-quality Schottky contacts to n-InGaN alloys prepared for photovoltaic devices von Chen, D. J., Huang, Y., Liu, B., Xie, Z. L., Zhang, R., Zheng, Y. D., Wei, Y., Narayanamurti, V.

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Composition dependence of Schottky barrier heights and bandgap energies of GaNxAs1−x synthesized by ion implantation and pulsed-laser melting von Kim, Taeseok, Alberi, Kirstin, Dubon, Oscar D., Aziz, Michael J., Narayanamurti, Venkatesh

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Artificially Structured Thin-Film Materials and Interfaces von Narayanamurti, V.

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Al(As,Sb) heterobarriers on InAs: growth, structural properties and electrical transport von Blank, H.-R, Mathis, S, Hall, E, Bhargava, S, Behres, A, Heuken, M, Kroemer, H, Narayanamurti, V

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High-quality Schottky contacts to n - In Ga N alloys prepared for photovoltaic devices von Chen, D. J., Huang, Y., Liu, B., Xie, Z. L., Zhang, R., Zheng, Y. D., Wei, Y., Narayanamurti, V.

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A framework and methodology for analyzing technology spillover processes with an application in solar photovoltaics von Kolesnikov, S, Goldstein, AP, Sun, B, Chan, G, Narayanamurti, V, Anadon, LD

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