X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor von Hrauda, Nina, Zhang, Jianjun, Wintersberger, Eugen, Etzelstorfer, Tanja, Mandl, Bernhard, Stangl, Julian, Carbone, Dina, Holý, Vaclav, Jovanović, Vladimir, Biasotto, Cleber, Nanver, Lis K, Moers, Jürgen, Grützmacher, Detlev, Bauer, Günther

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Limits on Thinning of Boron Layers With/Without Metal Contacting in PureB Si (Photo)Diodes von Knezevic, Tihomir, Liu, Xingyu, Hardeveld, Erwin, Suligoj, Tomislav, Nanver, Lis K.

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Low-Temperature Electrical Performance of PureB Photodiodes Revealing Al-Metallization-Related Degradation of Dark Currents von Knezevic, Tihomir, Suligoj, Tomislav, Capan, Ivana, Nanver, Lis K.

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Broadband PureB Ge-on-Si Photodiodes von Nanver, Lis K., Hassan, Vinayak V., Attariabad, Asma, Rosson, Nicholas, Arena, Chantal J.

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Optoelectrical Operation Stability of Broadband PureGaB Ge-on-Si Photodiodes with Anomalous Al-Mediated Sidewall Contacting von Krakers, Max, Knežević, Tihomir, Nanver, Lis K.

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Random Telegraph Signal Phenomena in Ultra Shallow p+n Silicon Avalanche Diodes von Agarwal, Vishal, Annema, Anne-Johan, Dutta, Satadal, Hueting, Raymond J. E., Nanver, Lis K., Nauta, Bram

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Silicon Drift Detectors with the Drift Field Induced by PureB-Coated Trenches von Knežević, Tihomir, Nanver, Lis, Suligoj, Tomislav

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Nanometer-thin pure boron CVD layers as material barrier to Au or Cu metallization of Si von Shivakumar, D. Thammaiah, Knežević, Tihomir, Nanver, Lis K.

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CMOS-Compatible PureGaB Ge-on-Si APD Pixel Arrays von Sammak, Amir, Aminian, Mahdi, Nanver, Lis K., Charbon, Edoardo

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Nanometer-Thin Pure Boron Layers as Mask for Silicon Micromachining von Xingyu Liu, Nanver, Lis K., Scholtes, Tom L. M.

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UV-Sensitive Low Dark-Count PureB Single-Photon Avalanche Diode von Lin Qi, Mok, K. R. C., Aminian, Mahdi, Charbon, Edoardo, Nanver, Lis K.

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Robust UV/VUV/EUV PureB Photodiode Detector Technology With High CMOS Compatibility von Nanver, Lis K., Lin Qi, Mohammadi, Vahid, Mok, K. R. M., de Boer, Wiebe B., Golshani, Negin, Sammak, Amir, Scholtes, Thomas L. M., Gottwald, Alexander, Kroth, Udo, Scholze, Frank

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Data Transmission Capabilities of Silicon Avalanche Mode Light-Emitting Diodes von Agarwal, Vishal, Annema, Anne-Johan, Hueting, Raymond J.E., Dutta, Satadal, Nanver, Lis K., Nauta, Bram

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Silicon micromachining with nanometer-thin boron masking and membrane material von Liu, Xingyu, Italiano, Joe, Scott, Robin, Nanver, Lis K

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Chemical Vapor Deposition of α-Boron Layers on Silicon for Controlled Nanometer-Deep p+n Junction Formation von Sarubbi, Francesco, Scholtes, Tom L. M., Nanver, Lis K.

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Indirect optical crosstalk reduction by highly-doped backside layer in single-photon avalanche diode arrays von Osrečki, Željko, Knežević, Tihomir, Nanver, Lis K., Suligoj, Tomislav

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Adaptive Multi-Band Multi-Mode Power Amplifier Using Integrated Varactor-Based Tunable Matching Networks von Neo, W.C.E., Yu Lin, Xiao-dong Liu, de Vreede, L.C.N., Larson, L.E., Spirito, M., Pelk, M.J., Buisman, K., Akhnoukh, A., Anton de Graauw, Nanver, L.K.

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On the Mechanisms Governing Aluminum-Mediated Solid-Phase Epitaxy of Silicon von Civale, Yann, Vastola, Guglielmo, Nanver, Lis K., Mary-Joy, Rani, Kim, Jae-Ryoung

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PureB single-photon avalanche diodes for low-energy electron detection down to 200  eV von Qi, Lin, Sluyterman, S, Kooijman, K, Mok, K R C, Nanver, Lis K

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VUV/Low-Energy Electron Si Photodiodes With Postmetal 400 °C PureB Deposition von MOHAMMADI, Vahid, LIN QI, GOLSHANI, Negin, MOK, Caroline K. R, DE BOER, Wie Be, SAMMAK, Amir, DERAKHSHANDEH, Jaber, VAN DER CINGEL, Johan, NANVER, Lis K

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