Charge control analysis of transistor storage time dependence on input "On" pulse width von Nanavati, R.P.

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Prediction of storage time in junction transistors von Nanavati, R.P.

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On thermal and excess currents in GaSb tunnel diodes von Nanavati, R.P., Eisencraft, M.

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Trapezoidal i-v characteristics in GaAs tunnel diodes von Agusta, B., Nanavati, R.P.

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Predicting transistor storage time for nonstep, quasi-voltage inputs von Nanavati, R.P., Wilfinger, R.J.

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Comments on "Excess current in gallium-arsenide tunnel diodes" von Gold, R.D., Nanavati, R.P.

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Tunnel diode junction capacitance in the vicinity of built-in voltage von Nanavati, R.P., Morato de Andrade, C.A.

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Excess current in gallium arsenide tunnel diodes von Nanavati, R.P., Morato De Andrade, C.A.

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