Unique optical properties of AlGaN alloys and related ultraviolet emitters von Nam, K. B., Li, J., Nakarmi, M. L., Lin, J. Y., Jiang, H. X.

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Band structure and fundamental optical transitions in wurtzite AlN von Li, J., Nam, K. B., Nakarmi, M. L., Lin, J. Y., Jiang, H. X., Carrier, Pierre, Wei, Su-Huai

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Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys von Nam, K. B., Nakarmi, M. L., Lin, J. Y., Jiang, H. X.

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Temperature and compositional dependence of the energy band gap of AlGaN alloys von Nepal, N., Li, J., Nakarmi, M. L., Lin, J. Y., Jiang, H. X.

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Mg acceptor level in AlN probed by deep ultraviolet photoluminescence von Nam, K. B., Nakarmi, M. L., Li, J., Lin, J. Y., Jiang, H. X.

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Elevated temperature dependent transport properties of phosphorus and arsenic doped zinc oxide thin films von Cai, B, Nakarmi, M L, Oder, T N, McMaster, M, Velpukonda, N, Smith, A

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Electrical and optical properties of Mg-doped Al0.7Ga0.3N alloys von Nakarmi, M. L., Kim, K. H., Khizar, M., Fan, Z. Y., Lin, J. Y., Jiang, H. X.

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Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys von Nakarmi, M. L., Nepal, N., Lin, J. Y., Jiang, H. X.

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Transport properties of highly conductive n-type Al-rich AlxGa1−xN(x⩾0.7) von Nakarmi, M. L., Kim, K. H., Zhu, K., Lin, J. Y., Jiang, H. X.

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200 nm deep ultraviolet photodetectors based on AlN von Li, J., Fan, Z. Y., Dahal, R., Nakarmi, M. L, Lin, J. Y., Jiang, H. X.

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Optical and electronic properties of NiFe2O4 and CoFe2O4 thin films von Rai, R. C., Wilser, S., Guminiak, M., Cai, B., Nakarmi, M. L.

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AlGaN-based ultraviolet light-emitting diodes grown on AlN epilayers von Kim, K. H., Fan, Z. Y., Khizar, M., Nakarmi, M. L., Lin, J. Y., Jiang, H. X.

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Optical and electrical properties of Mg-doped p -type AlxGa1−xN von Li, J., Oder, T. N., Nakarmi, M. L., Lin, J. Y., Jiang, H. X.

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Exciton localization in AlGaN alloys von Nepal, N., Li, J., Nakarmi, M. L., Lin, J. Y., Jiang, H. X.

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Elevated temperature dependence of energy band gap of ZnO thin films grown by e-beam deposition von Rai, R. C., Guminiak, M., Wilser, S., Cai, B., Nakarmi, M. L.

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Signature of structural distortion in optical spectra of YFe2O4 thin film von Rai, R. C., Hinz, J., Petronilo, G. X. A., Sun, F., Zeng, H., Nakarmi, M. L., Niraula, P. R.

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Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers von Nam, K. B., Li, J., Nakarmi, M. L., Lin, J. Y., Jiang, H. X.

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Photoluminescence studies of impurity transitions in AlGaN alloys von Nepal, N., Nakarmi, M. L., Lin, J. Y., Jiang, H. X.

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Band-edge exciton states in AlN single crystals and epitaxial layers von Chen, L., Skromme, B. J., Dalmau, R. F., Schlesser, R., Sitar, Z., Chen, C., Sun, W., Yang, J., Khan, M. A., Nakarmi, M. L., Lin, J. Y., Jiang, H.-X.

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Spin-charge-orbital coupling in multiferroic LuFe2O4 thin films von Rai, R. C., Delmont, A., Sprow, A., Cai, B., Nakarmi, M. L.

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