Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance von Takagi, S., Iisawa, T., Tezuka, T., Numata, T., Nakaharai, S., Hirashita, N., Moriyama, Y., Usuda, K., Toyoda, E., Dissanayake, S., Shichijo, M., Nakane, R., Sugahara, S., Takenaka, M., Sugiyama, N.

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High-Performance GeO2/Ge nMOSFETs With Source/Drain Junctions Formed by Gas-Phase Doping von MORII, K, IWASAKI, T, NAKANE, R, TAKENAKA, M, TAKAGI, S

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Structural and magnetic properties of ferromagnetic Fe1−xSix (0.18 ≤ x ≤ 0.33) films formed by rapid thermal annealing on silicon-on-insulator substrates von Sugahara, S

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Gate dielectric formation and MIS interface characterization on Ge von Takagi, S., Maeda, T., Taoka, N., Nishizawa, M., Morita, Y., Ikeda, K., Yamashita, Y., Nishikawa, M., Kumagai, H., Nakane, R., Sugahara, S., Sugiyama, N.

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Device structures and carrier transport properties of advanced CMOS using high mobility channels von Takagi, S., Tezuka, T., Irisawa, T., Nakaharai, S., Numata, T., Usuda, K., Sugiyama, N., Shichijo, M., Nakane, R., Sugahara, S.

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Fabrication of pseudo-spin-MOSFETs using a multi-project wafer CMOS chip von Nakane, R., Shuto, Y., Sukegawa, H., Wen, Z.C., Yamamoto, S., Mitani, S., Tanaka, M., Inomata, K., Sugahara, S.

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High-Performance \hbox/\hbox nMOSFETs With Source/Drain Junctions Formed by Gas-Phase Doping von Morii, K, Iwasaki, T, Nakane, R, Takenaka, M, Takagi, S

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Effect of postgrowth annealing on the morphology and magnetic properties of MnAs thin films grown on GaAs(001) substrates von Nakane, R., Sugahara, S., Tanaka, M.

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Schottky barrier MOSFETs with epitaxial ferromagnetic MnAs/Si(0 0 1) source and drain: Post-growth annealing and transport characteristics von Sugiura, K., Nakane, R., Sugahara, S., Tanaka, M.

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Structural and magnetic properties of ferromagnetic Fe1− x Si x (0.18 ≤  x  ≤ 0.33) films formed by rapid thermal annealing on silicon-on-insulator substrates von Nakane, R., Sugahara, S., Tanaka, M.

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Origin of the magnetically dead layer and restoration of magnetism by annealing in the spin filtering structure MFe2O4(M=Co,Ni)/Al2O3/Si(111).: An x-ray magnetic circular dichroism... von Nonaka, Y., Wakabayashi, Y. K., Shibata, G., Ikeda, K., Chi, Z., Wan, Y. -X., Suzuki, M., Takeda, T., Tanaka, A., Saitoh, Y., Yamagami, H., Takeda, Y., Suzuki, M.-Sakamaki, Amemiya, K., Kobayashi, M., Tanaka, M., Nakane, R., Fujimori, A.

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Origin and restoration of the magnetically dead layer in the interface of CoFe2O4/Al2O3/Si(111) structure.: An x-ray magnetic circular dichroism study von Nonaka, Y., Wakabayashi, Y. K., Shibata, G., Sakamoto, S., Ikeda, K., Chi, Z., Wan, Y., Suzuki, M., Tanaka, A., Sakamaki, M., Amemiya, K., Tanaka, M., Nakane, R., Fujimori, A.

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Growth and magnetic properties of epitaxial MnAs/NiAs/MnAs heterostructures grown on exact GaAs(1 1 1)B substrates von Nakane, R., Kondo, J., Yuan, M.W., Sugahara, S., Tanaka, M.

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Growth and magnetoresistance of epitaxial metallic MnAs/NiAs/MnAs trilayers on GaAs [formula omitted] substrates von Nakane, R, Sugahara, S, Tanaka, M

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High-Performance hbox GeO 2 / hbox Ge nMOSFETs With Source/Drain Junctions Formed by Gas-Phase Doping von Morii, K, Iwasaki, T, Nakane, R, Takenaka, M, Takagi, S

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High-Performance [Formula Omitted] nMOSFETs With Source/Drain Junctions Formed by Gas-Phase Doping von Morii, K, Iwasaki, T, Nakane, R, Takenaka, M, Takagi, S

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(Invited) High Performance III-V-on-Insulator MOSFETs on Si Realized by Direct Wafer Bonding Applicable to Large Wafer Size von Takagi, Shinichi, Kim, Sang-Hyeon, Ikku, Yuki, Yokoyama, Masafumi, Nakane, Ryosho, Li, Jian, Kao, Yung-Chung, Takenaka, Mitsuru

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Appearance of Anisotropic Magnetoresistance and Electric Potential Distribution in Si-Based Multiterminal Devices With Fe Electrodes von Nakane, R., Sato, S., Kokutani, S., Tanaka, M.

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High performance extremely-thin body InAs-on-insulator MOSFETs on Si with Ni-InGaAs metal S/D by contact resistance reduction technology von Kim, S. H., Yokoyama, M., Nakane, R., Ichikawa, O., Osada, T., Hata, M., Takenaka, M., Takagi, S.

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Strained extremely-thin body In0.53Ga0.47As-on-insulator MOSFETs on Si substrates von Kim, S. H., Yokoyama, M., Nakane, R., Ichikawa, O., Osada, T., Hata, M., Takenaka, M., Takagi, S.

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