Investigation of N-polar InGaN growth on misoriented ScAlMgO4 substrates von Najmi, Mohammed A., Kirilenko, Pavel, Iida, Daisuke, Ohkawa, Kazuhiro

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High crystallinity N-polar InGaN layers grown on cleaved ScAlMgO4 substrates von Kirilenko, Pavel, Najmi, Mohammed A., Ma, Bei, Shushanian, Artem, Velazquez-Rizo, Martin, Iida, Daisuke, Ohkawa, Kazuhiro

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Demonstration of 621-nm-wavelength InGaN-based single-quantum-well LEDs with an external quantum efficiency of 4.3% at 10.1 A/cm2 von Iida, Daisuke, Kirilenko, Pavel, Velazquez-Rizo, Martin, Zhuang, Zhe, Najmi, Mohammed A., Ohkawa, Kazuhiro

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633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress von Iida, Daisuke, Zhuang, Zhe, Kirilenko, Pavel, Velazquez-Rizo, Martin, Najmi, Mohammed A., Ohkawa, Kazuhiro

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(10 1¯ 3)-oriented semipolar GaN growth on (10 1¯ 0) m-plane ScAlMgO4 substrate von Najmi, Mohammed A., Iida, Daisuke, Ohkawa, Kazuhiro

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Simultaneous Growth Strategy of High-Optical-Efficiency GaN NWs on a Wide Range of Substrates by Pulsed Laser Deposition von Almalawi, Dhaifallah, Lopatin, Sergei, Edwards, Paul R., Xin, Bin, Subedi, Ram C., Najmi, Mohammed A., Alreshidi, Fatimah, Genovese, Alessandro, Iida, Daisuke, Wehbe, Nimer, Ooi, Boon S., Ohkawa, Kazuhiro, Martin, Robert W., Roqan, Iman S.

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Photoluminescence Emission Efficiency Analysis Methodology by Integrating Raman Spectroscopy of the A1(LO) and E2(high) Phonons in a GaInN/GaN Heterostructure von Shwe, Thee Ei Khaing, Asaji, Tatsuya, Kimura, Ryota, Iida, Daisuke, Najmi, Mohammed A., Ohkawa, Kazuhiro, Ishitani, Yoshihiro

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Local augmentation of phonon transport at GaInN/GaN heterointerface by introducing a graded variation of InN mole fraction von Shwe, Thee Ei Khaing, Asaji, Tatsuya, Iida, Daisuke, Najmi, Mohammed A., Ohkawa, Kazuhiro, Ishitani, Yoshihiro

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Microstructural analysis of N-polar InGaN directly grown on a ScAlMgO4(0001) substrate von Velazquez-Rizo, Martin, Najmi, Mohammed A., Iida, Daisuke, Kirilenko, Pavel, Ohkawa, Kazuhiro

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Red light-emitting diode with full InGaN structure on a ScAlMgO4 substrate von Najmi, Mohammed A., Jalmood, Rawan S., Kotov, Ivan, Altinkaya, Cesur, Takeuchi, Wakana, Iida, Daisuke, Ohkawa, Kazuhiro

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二波長ラマン散乱分光を用いたInGaN/GaNヘテロ構造におけるフォノン輸送解析 von 石谷, 善博, 中山, 朋哉, 伊藤, 航太郎, 馬, 蓓, 飯田, 大輔, Najmi, Mohammed A., 大川, 和宏

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Common Mental Health Conditions and Self-Stigma in Saudi Adults: Implications for Promotion and Intervention von Jareebi, Mohammad A, Alqassim, Ahmad Y, Otayf, Dhiyaa A H, Najmi, Mohammed A, Bakkarey, Ali H, Omar, Eyad Z, Hakami, Mohammed H, Hakami, Hadi A, Jithmi, Faisal M, Gosadi, Ibrahim M, Muaddi, Mohammed A, Alharbi, Abdullah A, Makeen, Anwar M, Khormi, Yahya H

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Analyses of phonon transport in InGaN/GaN heterostructures by Raman scattering spectroscopy using double lasers von Ishitani, Yoshihiro, Nakayama, Tomoya, Ito, Kotaro, Ma, Bei, Iida, Daisuke, Najmi, Mohammed. A., Ohkawa, Kazuhiro

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(10 1 ¯ 3)-oriented semipolar GaN growth on (10 1 ¯ 0) m-plane ScAlMgO 4 substrate von Najmi, Mohammed A., Iida, Daisuke, Ohkawa, Kazuhiro

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Red light-emitting diode with full InGaN structure on a ScAlMgO 4 substrate von Najmi, Mohammed A., Jalmood, Rawan S., Kotov, Ivan, Altinkaya, Cesur, Takeuchi, Wakana, Iida, Daisuke, Ohkawa, Kazuhiro

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Erratum: “Photoluminescence Emission Efficiency Analysis Methodology by Integrating Raman Spectroscopy of the A 1 (LO) and E 2 (high) Phonons in a GaInN/GaN Heterostructure” [Physi... von Khaing Shwe, Thee Ei, Asaji, Tatsuya, Kimura, Ryota, Iida, Daisuke, Najmi, Mohammed A., Ohkawa, Kazuhiro, Ishitani, Yoshihiro

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Photoluminescence Emission Efficiency Analysis Methodology by Integrating Raman Spectroscopy of the A 1 (LO) and E 2 (high) Phonons in a GaInN/GaN Heterostructure von Shwe, Thee Ei Khaing, Asaji, Tatsuya, Kimura, Ryota, Iida, Daisuke, Najmi, Mohammed A., Ohkawa, Kazuhiro, Ishitani, Yoshihiro

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Analysis of phonon transport through heterointerfaces of InGaN/GaN via Raman imaging using double-laser system: The effect of crystal defects at heterointerface von Nakayama, Tomoya, Ito, Kotaro, Ma, Bei, Iida, Daisuke, Najmi, Mohammed A., Ohkawa, Kazuhiro, Ishitani, Yoshihiro

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Microstructural analysis of N-polar InGaN directly grown on a ScAlMgO 4 (0001) substrate von Velazquez-Rizo, Martin, Najmi, Mohammed A., Iida, Daisuke, Kirilenko, Pavel, Ohkawa, Kazuhiro

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Modern Approaches in the Discovery and Development of Plant-Based Natural Products and Their Analogues as Potential Therapeutic Agents von Najmi, Asim, Javed, Sadique A, Al Bratty, Mohammed, Alhazmi, Hassan A

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