Unusual electronic state of Sn in AgSnSe2 von Naijo, Y, Hada, K, Furukawa, T, Itou, T, Ueno, T, Kobayashi, K, Mazin, I Mazin, Jeschke, H O, Akimitsu, J

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NMR measurement of wurtzite CdSe under pulsed-current injection von Watanabe, K., Ogasawara, N., Akimoto, S., Ueda, K., Naijo, Y., Furukawa, T., Itou, T.

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NMR investigation of the superconducting state in a Valence Skipping candidate material, AgSnSe2 von Naijo, Y., Hada, K., Furukawa, T., Itou, T., Ueno, T., Kobayashi, K., Akimitsu, J.

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77Se-, 119Sn-NMR investigation on the electronic state of the normal and superconducting phases in AgSnSe2 von Naijo, Y., Watanabe, K., Hada, K., Furukawa, T., Itou, T., Ueno, T., Kobayashi, K., Akimitsu, J.

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NMR investigation of the superconducting state in AgSnSe2 von Naijo, Y., Hada, K., Furukawa, T., Itou, T., Ueno, T., Kobayashi, K., Akimitsu, J.

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NMR investigation of the metallic state in a Valence Skipping candidate material, AgSnSe2 von Hada, K., Naijo, Y., Furukawa, T., Itou, T., Ueno, T., Kobayashi, K., Akimitsu, J.

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Unusual electronic state of Sn in AgSnSe 2 von Naijo, Y., Hada, K., Furukawa, T., Itou, T., Ueno, T., Kobayashi, K., Mazin, I. I., Jeschke, H. O., Akimitsu, J.

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極性半導体ウルツ鉱CdSeのパルス電流下NMR測定 von 渡邉, 勘太, 小笠原, 直輝, 秋本, 慎之介, 上田, 桂右, 内條, 雄介, 古川, 哲也, 伊藤, 哲明

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77Se-、119Sn-NMR測定から見たAgSnSe2の常伝導相と超伝導相の電子状態 von 内條, 雄介, 渡邉, 勘太, 羽田, 健吾, 古川, 哲也, 伊藤, 哲明, 上野, 哲平, 小林, 夏野, 秋光, 純

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119Sn-NMR測定によるValence Skipping候補物質AgSnSe2の超伝導相電子状態の検証 von 内條, 雄介, 羽田, 健吾, 古川, 哲也, 伊藤, 哲明, 上野, 哲平, 小林, 夏野, 秋光, 純

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AgSnSe2のNMRから見た超伝導相電子状態の解明 von 内條, 雄介, 羽田, 健吾, 古川, 哲也, 伊藤, 哲明, 上野, 哲平, 小林, 夏野, 秋光, 純

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NMRから見たValence Skipping候補物質AgSnSe2の金属相電子状態 von 羽田, 健吾, 内條, 雄介, 古川, 哲也, 伊藤, 哲明, 上野, 哲平, 小林, 夏野, 秋光, 純

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Direct current electric-field induced scattering behavior in lyotropic liquid crystalline cell composed of carbazolyl groups pendant polypeptide and TNF von Naijo, Yoshihisa, Fujisaki, Eita, Tsunoda, Makoto, Tanaka, Toyohide, Kobayashi, Norihisa

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Structural analysis of double-layer Shockley stacking faults formed in heavily-nitrogen-doped 4H-SiC during annealing von Tokuda, Y., Yamashita, T., Kamata, I., Naijo, T., Miyazawa, T., Hayashi, S., Hoshino, N., Kato, T., Okumura, H., Kimoto, T., Tsuchida, H.

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Photoinduced doping effect of pentacene field effect transistor in oxygen atmosphere studied by displacement current measurement von Ogawa, Satoshi, Naijo, Tatsuo, Kimura, Yasuo, Ishii, Hisao, Niwano, Michio

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Displacement Current Measurement as a Tool to Characterize Organic Field Effect Transistors von Ogawa, Satoshi, Naijo, Tatsuo, Kimura, Yasuo, Ishii, Hisao, Niwano, Michio

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Photoinduced Doping of Organic Field Effect Transistors Studied by Displacement Current Measurement and Infrared Absorption Spectroscopy in Multiple Internal Reflection Geometry von Ogawa, Satoshi, Naijo, Tatsuo, Kimura, Yasuo, Ishii, Hisao, Niwano, Michio

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Field Emission Property of Al:ZnO Whiskers Modified by Amorphous Carbon and Related Films von Ohkawara, Yoshiaki, Naijo, Takanori, Washio, Tsukasa, Ohshio, Shigeo, Ito, Haruhiko, Saitoh, Hidetoshi

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