Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2 von Mirabelli, Gioele, McGeough, Conor, Schmidt, Michael, McCarthy, Eoin K., Monaghan, Scott, Povey, Ian M., McCarthy, Melissa, Gity, Farzan, Nagle, Roger, Hughes, Greg, Cafolla, Attilio, Hurley, Paul K., Duffy, Ray

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Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C von Ansari, Lida, Monaghan, Scott, McEvoy, Niall, Coileáin, Cormac Ó, Cullen, Conor P., Lin, Jun, Siris, Rita, Stimpel-Lindner, Tanja, Burke, Kevin F., Mirabelli, Gioele, Duffy, Ray, Caruso, Enrico, Nagle, Roger E., Duesberg, Georg S., Hurley, Paul K., Gity, Farzan

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Electron transport properties of sub-3-nm diameter copper nanowires von Jones, Sarah L. T., Sanchez-Soares, Alfonso, Plombon, John J., Kaushik, Ananth P., Nagle, Roger E., Clarke, James S., Greer, James C.

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High Hole Mobility Polycrystalline GaSb Thin Films von Curran, Anya, Gity, Farzan, Gocalinska, Agnieszka, Mura, Enrica, Nagle, Roger E., Schmidt, Michael, Sheehan, Brendan, Pelucchi, Emanuele, O’Dwyer, Colm, Hurley, Paul K.

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Back-gated Nb-doped MoS2 junctionless field-effect-transistors von Mirabelli, Gioele, Schmidt, Michael, Sheehan, Brendan, Cherkaoui, Karim, Monaghan, Scott, Povey, Ian, McCarthy, Melissa, Bell, Alan P., Nagle, Roger, Crupi, Felice, Hurley, Paul K., Duffy, Ray

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Effects of Annealing Temperature and Ambient on Metal/PtSe2 Contact Alloy Formation von Mirabelli, Gioele, Walsh, Lee A, Gity, Farzan, Bhattacharjee, Shubhadeep, Cullen, Conor P, Ó Coileáin, Cormac, Monaghan, Scott, McEvoy, Niall, Nagle, Roger, Hurley, Paul K, Duffy, Ray

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Effect of strain, thickness, and local surface environment on electron transport properties of oxygen-terminated copper thin films von Sanchez-Soares, Alfonso, Jones, Sarah L. T., Plombon, John J., Kaushik, Ananth P., Nagle, Roger E., Clarke, James S., Greer, James C.

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Structural and Electronic Properties of Polycrystalline InAs Thin Films Deposited on Silicon Dioxide and Glass at Temperatures below 500 °C von Curran, Anya, Gocalinska, Agnieszka, Pescaglini, Andrea, Secco, Eleonora, Mura, Enrica, Thomas, Kevin, Nagle, Roger E., Sheehan, Brendan, Povey, Ian M., Pelucchi, Emanuele, O’Dwyer, Colm, Hurley, Paul K., Gity, Farzan

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Insights into Multilevel Resistive Switching in Monolayer MoS2 von Bhattacharjee, Shubhadeep, Caruso, Enrico, McEvoy, Niall, Ó Coileáin, Cormac, O’Neill, Katie, Ansari, Lida, Duesberg, Georg S, Nagle, Roger, Cherkaoui, Karim, Gity, Farzan, Hurley, Paul K

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Insights into Multilevel Resistive Switching in Monolayer MoS 2 von Bhattacharjee, Shubhadeep, Caruso, Enrico, McEvoy, Niall, Ó Coileáin, Cormac, O'Neill, Katie, Ansari, Lida, Duesberg, Georg S, Nagle, Roger, Cherkaoui, Karim, Gity, Farzan, Hurley, Paul K

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Effects of Annealing Temperature and Ambient on Metal/PtSe 2 Contact Alloy Formation von Mirabelli, Gioele, Walsh, Lee A., Gity, Farzan, Bhattacharjee, Shubhadeep, Cullen, Conor P., Ó Coileáin, Cormac, Monaghan, Scott, McEvoy, Niall, Nagle, Roger, Hurley, Paul K., Duffy, Ray

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Next generation low temperature polycrystalline materials for above IC electronics. High mobility n- and p-type III-V metalorganic vapour phase epitaxy thin films on amorphous subs... von Gocalinska, Agnieszka, Pescaglini, Andrea, Secco, Eleonora, Mura, Enrica E, Thomas, Kevin, Curran, Anya, Gity, Farzan, Nagle, Roger, Schmidt, Michael, Micha owski, Pawe P, Hurley, Paul K, Povey, Ian, Pelucchi, Emanuele

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Structural and Electrical Investigation of MoS2 Thin Films Formed by Thermal Assisted Conversion of Mo Metal von Duffy, Ray, Foley, Patrick, Filippone, Bruno, Mirabelli, Gioele, O'Connell, Dan, Sheehan, Brendan, Carolan, Pat, Schmidt, Michael, Cherkaoui, Karim, Gatensby, Riley, Hallam, Toby, Duesberg, Georg, Crupi, Felice, Nagle, Roger, Hurley, Paul K.

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Structural and Electrical Investigation of MoS 2 Thin Films Formed by Thermal Assisted Conversion of Mo Metal von Duffy, Ray, Foley, Patrick, Filippone, Bruno, Mirabelli, Gioele, O'Connell, Dan, Sheehan, Brendan, Carolan, Pat, Schmidt, Michael, Cherkaoui, Karim, Gatensby, Riley, Hallam, Toby, Duesberg, Georg, Crupi, Felice, Nagle, Roger, Hurley, Paul K.

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Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al 2 O 3 Deposited by Atomic Layer Deposition and Incorporated at the High-k/III-V Interface of MO 2 /... von O'Mahony, Aileen, Monaghan, Scott, Chiodo, Rosario, Povey, Ian, Cherkaoui, Karim, Nagle, Roger, O'Connor, Eamon, Long, Rathnait, Djara, Vladimir, O'Connell, Dan, Crupi, Felice, Pemble, Martyn, Hurley, Paul K.

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(Invited) Equivalent Oxide Thickness Correction in the High-k/In 0.53 Ga 0.47 As/InP System von Hurley, Paul K., Long, Rathnait, O'Regan, Terrance, O'Connor, Eamon, Monaghan, Scott, Djara, Vladimir, Negara, M. Adi, O'Mahony, Aileen, Povey, Ian, Blake, Alan, Nagle, Roger, O'Connell, Dan, Pemble, Martyn, Cherkaoui, Karim

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(Invited) Multi-Level Non-Volatile Memory in Au/Monolayer MoS 2 /Au Structures von Bhattacharjee, Shubhadeep, Caruso, Enrico, McEvoy, Niall, Coileáain, Cormac Ó, Ansari, Lida, Nagle, Roger, Cherkaoui, Karim, Gity, Farzan, Hurley, P. K.

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Effect of strain, thickness, and local surface environment on electron transport properties of oxygen-terminated copper thin films von Sanchez-Soares, Alfonso, Jones, Sarah L T, Plombon, John J, Kaushik, Ananth P, Nagle, Roger E, Clarke, James S, Greer, James C

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Electron transport properties of sub-3-nm diameter copper nanowires von Jones, Sarah L T, Sanchez-Soares, Alfonso, Plombon, John J, Kaushik, Ananth P, Nagle, Roger E, Clarke, James S, Greer, James C

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Mo-Based Transition-Metal-Dichalcogenide Junctionless Field-Effect-Transistors von Mirabelli, Gioele, Duffy, Ray, Hurley, P. K., Monaghan, Scott, Cherkaoui, Karim, Schmidt, Michael, Sheehan, Brendan, Povey, Ian M, McCarthy, Melissa, Nagle, Roger, Bell, Alan

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