Theoretical analysis of tunneling current in 4H-SiC Schottky barrier diodes under reverse-biased conditions based on the complex band structure von Murakami, Yutoku, Nagamizo, Sachika, Tanaka, Hajime, Mori, Nobuya

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Impact of interface structure on electronic states in 4H-SiC inversion layer von Nagamizo, Sachika, Tanaka, Hajime, Mori, Nobuya

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Wannier–Stark localization of electronic states in 4H-SiC MOS inversion layer von Nagamizo, Sachika, Tanaka, Hajime, Mori, Nobuya

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Analysis of tunneling probability in heavily doped 4H-SiC Schottky barrier diodes based on complex band structure considering barrier potential von Murakami, Yutoku, Nagamizo, Sachika, Tanaka, Hajime, Mori, Nobuya

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Analysis of Electronic States at SiC MOS Inteface Based on Empirical Pseudopotential Method von Nagamizo, Sachika, Hajime, Tanaka, Nobuya, Mori

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経験的擬ポテンシャル法に基づくSiC MOS界面における電子状態の解析 von 永溝, 幸周, 田中, 一, 森, 伸也

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