Epitaxial Heterostructures of the Active Region for Near-Infrared LEDs von Salii, R. A., Mintairov, S. A., Nadtochiy, A. M., Kalyuzhnyy, N. A.

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Model for Speed Performance of Quantum-Dot Waveguide Photodiode von Zhukov, A. E., Kryzhanovskaya, N. V., Makhov, I. S., Moiseev, E. I., Nadtochiy, A. M., Fominykh, N. A., Mintairov, S. A., Kalyuzhyy, N. A., Zubov, F. I., Maximov, M. V.

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Temperature Dependencies of Radiative and Nonradiative Carrier Lifetimes in InGaAs Quantum Well-Dots von Nadtochiy, A. M., Melnichenko, I. A., Ivanov, K. A., Mintairov, S. A., Kalyuzhnyy, N. A., Maximov, M. V., Kryzhanovskaya, N. V., Zhukov, A. E.

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Enhanced photoresponse of Ge/Si nanostructures by combining amorphous silicon deposition and annealing von Podolian, A., Nadtochiy, A., Korotchenkov, O., Romanyuk, B., Melnik, V., Popov, V.

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InGaAs metamorphic laser (1064 nm) power converters with over 40% efficiency von Kalyuzhnyy, N.A, Mintairov, S.A, Nadtochiy, A.M, Nevedomskiy, V.N, Rybalchenko, D.V, Shvarts, M.Z

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Organic dairy products made from organic raw materials von Ivkova, I A, Zubareva, E A, Dovgan, N B, Yu Nadtochiy, A

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Investigation of a p–i–n Photodetector with an Absorbing Medium Based on InGaAs/GaAs Quantum Well-Dots von Kryzhanovskaya, N. V., Blokhin, S. A., Makhov, I. S., Moiseev, E. I., Nadtochiy, A. M., Fominykh, N. A., Mintairov, S. A., Kaluyzhnyy, N. A., Guseva, Yu. A., Kulagina, M. M., Zubov, F. I., Kolodeznyi, E. S., Maximov, M. V., Zhukov, A. E.

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Internal Loss in Diode Lasers with Quantum Well-Dots von Zhukov, A. E., Nadtochiy, A. M., Kryzhanovskaya, N. V., Shernyakov, Yu. M., Gordeev, N. Yu, Serin, A. A., Mintairov, S. A., Kalyuzhnyy, N. A., Payusov, A. S., Kornyshov, G. O., Maximov, M. V., Wang, Y.

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Ag/C60 heterojunctions for thermoelectricity von Kozachenko, V., Shmid, V., Podolian, A., Nadtochiy, A., Korotchenkov, O.

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Research of Influence of the Inlet Elements Design on a Hydraulic Efficiency of an Intermediate Stage in the BB3-Type Multi-Stage Centrifugal Pumps von Nadtochiy, A. S., Tverdohleb, I. B.

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Light-Emitting AlGaAs/GaAs Diodes Based on InGaAs Strain-Compensated Quantum Wells with Minimized Internal Losses Caused by 940-nm Radiation Absorption von Salii, R. A., Malevskaya, A. V., Malevskii, D. A., Mintairov, S. A., Nadtochiy, A. M., Kalyuzhnyy, N. A.

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Effect of Temperature on Current Through Various Recombination Channels in GaAs Solar Cells with GalnAs Quantum Dots von Mintairov, M. A., Evstropov, V. V., Mintairov, S. A., Salii, R. A., Nadtochiy, A. M., Kalyuzhnyy, N. A.

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Increase in the Efficiency of a Tandem Semiconductor Laser–Optical Amplifier Based on Self-Organizing Quantum Dots von Zhukov, A. E., Kryzhanovskaya, N. V., Moiseev, E. I., Dragunova, A. S., Nadtochiy, A. M., Maximov, M. V., Gordeev, N. Yu

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Bimodality in the Electroluminescence Spectra of InGaAs Quantum Well–Dot Nanostructures von Kharchenko, A. A., Nadtochiy, A. M., Serin, A. A., Mintairov, S. A., Kalyuzhnyy, N. A., Zhukov, A. E., Maximov, M. V., Breuer, S.

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Information Encoding Using Two-Level Generation in a Quantum Dot Laser von Maximov, M. V., Shernyakov, Yu. M., Gordeev, N. Yu, Nadtochiy, A. M., Zhukov, A. E.

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Infrared (850 nm) Light-Emitting Diodes with Multiple InGaAs Quantum Wells and “Back” Reflector von Malevskaya, A. V., Kalyuzhnyy, N. A., Malevskii, D. A., Mintairov, S. A., Nadtochiy, A. M., Nakhimovich, M. V., Soldatenkov, F. Y., Shvarts, M. Z., Andreev, V. M.

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Saturation Power of a Semiconductor Optical Amplifier Based on Self-Organized Quantum Dots von Zhukov, A. E., Kryzhanovskaya, N. V., Moiseev, E. I., Nadtochiy, A. M., Zubov, F. I., Fetisova, M. V., Maximov, M. V., Gordeev, N. Yu

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Taking Account of the Substrate in Calculation of the Electrical Resistance of Microdisk Lasers von Zhukov, A. E., Kryzhanovskaya, N.V., Moiseev, E. I., Nadtochiy, A. M., Maximov, M. V., Dragunova, A. S.

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Modification of InGaAs/GaAs heterostructure density of states and optical gain using hybrid quantum well-dots von Maximov, M, Gordeev, N, Payusov, A, Shernyakov, Yu, Mintairov, S, Kalyuzhnyy, N, Kulagina, M, Nadtochiy, A, Nevedomskiy, V, Zhukov, A

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Photoluminescence excitation spectroscopy of InAs/InGaAs/GaAs quantum dot arrays in a wide temperature range von Rybalko, D A, Nadtochiy, A M, Maximov, M V

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