Control of yellow photoluminescence in AlGaN/GaN heterostructures von Gladysheva, Nadezhda B., Gruzdov, Vadim V., Kolkovskii, Yurii V., Kontsevoy, Yulii A., Pevtsov, Evgenii F.

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Current relaxation analysis in AlGaN/GaN high electron mobility transistors von Polyakov, Alexander Y., Smirnov, N. B., Shchemerov, Ivan V., Lee, In-Hwan, Jang, Taehoon, Dorofeev, Alexey A., Gladysheva, Nadezhda B., Kondratyev, Eugene S., Turusova, Yulia A., Zinovyev, Roman A., Turutin, A. V., Ren, Fan, Pearton, S. J.

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Studying Ni/Au, Mo/Au and Re/Au Schottky Barriers on AlGaN/GaN Heterostructures von Evgeniy V., Sleptsov, Alexey V., Chernykh, Sergey V., Chernykh, Anastasia A., Sleptsova, Evgeniy S., Kondratiev, Nadezhda B., Gladysheva, Alexey A., Dorofeyev, Sergey I., Didenko

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