Electrochemical impedance spectroscopy for study of electronic structure in disordered organic semiconductors—Possibilities and limitations von Schauer, F., Nádaždy, V., Gmucová, K.

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Energy resolved electrochemical impedance spectroscopy for electronic structure mapping in organic semiconductors von Nádaždy, V., Schauer, F., Gmucová, K.

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Electrochemically induced charge injection in disordered organic conductive polymers von Schauer, F., Nádaždy, V., Gmucová, K., Váry, T.

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Electronic structure of UV degradation defects in polysilanes studied by Energy Resolved – Electrochemical Impedance Spectroscopy von Schauer, F., Tkáčová, M., Nadáždy, V., Gmucová, K., Ožvoldová, M., Tkáč, L., Chlpík, J.

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Analysis of structure and defects in thin silicon films deposited from hydrogen diluted silane von van Elzakker, G., Nádaždy, V., Tichelaar, F.D., Metselaar, J.W., Zeman, M.

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Scanning Probe Microscope based Deep-Level Spectroscopy of semiconductor films von Lanyi, Aa, NadaAady, V

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Experimental observation of oxygen-related defect state in pentacene thin films von Nádaždy, V., Durný, R., Puigdollers, J., Voz, C., Cheylan, S., Gmucová, K.

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Defect states in pentacene thin films prepared by thermal evaporation and Langmuir–Blodgett technique von Nádaždy, V., Durný, R., Puigdollers, J., Voz, C., Cheylan, S., Weis, M.

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Defect-state engineering in a-Si:H: An effective tool for studying processes during light-induced degradation von Nádaždy, V., Durný, R., Zeman, M.

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Analysis of defects in microcrystalline islands in amorphous silicon films with a Scanning Charge-Transient Microscope von Lányi, Š., Nádaždy, V.

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Effect of crystallinity on UV degradability of poly[methyl(phenyl)silane] by energy-resolved electrochemical impedance spectroscopy von Schauer, F., Tkáč, L., Ožvoldová, M., Nádaždy, V., Gmucová, K., Jergel, M., Šiffalovič, P.

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Detection of Cytochrome c with Calixarenes Incorporated into Supported Lipid Membranes Via Charge Transient Measurements von Nádaždy, V., Gmucová, K., Poturnayová, A., Šnejdárková, M., Karpišová, I., Lányi, Š., Hianik, T.

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Charge deep-level transient spectroscopy study of high-energy-electron-beam-irradiated hydrogenated amorphous silicon von Klaver, A., Nádaždy, V., Zeman, M., van Swaaij, R. A. C. M. M.

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DENSITY OF LOCALIZED STATES IN HYDROGENATED AMORPHOUS SILICON DETERMINED BY QUASISTATIC CAPACITANCE OF METAL/a-Si:H/SiO2/c-Si STRUCTURES von Nedev, N, Manolov, E, Ivanov, Tz, Pantchev, B, Beshkov, G, Durny, R, Gmukova, K, Nadazdy, V

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Observation of a band of fast responding metastable deep traps for charge carriers in crystalline Si(n)/SiNx:H/amorphous Si:H/Al structures von THURZO, I, NADAZDY, V, KUMEDA, M, SHIMIZU, T

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Photoluminescence properties of a-Si:H based thin films and corresponding solar cells von Pinčı́k, E., Kobayashi, H., Glesková, H., Kučera, M., Ortega, L., Jergel, M., Falcony, C., Brunner, R., Shimizu, T., Nádaždy, V., Zeman, M., Mikula, M., Kumeda, M., van Swaaij, R.A.C.M.M.

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Influence of the a-Si:H interfacial region defects on the quasi-static capacitance of Metal/c-Si/SiO2/a-Si:H structures von Nedev, N, Manolov, E, Pantchev, B, Ivanov, Ts, Durnv, R, Nadady, V

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Small-signal deep-level transient spectroscopy as a local probe of potential fluctuations due to electrically active defects von Nádazdy, V, Thurzo, I

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Properties of semiconductor surfaces covered with very thin insulating overlayers prepared by impacts of low-energy particles von Pinčı́k, E, Glesková, H, Müllerová, J, Nádaždy, V, Mráz, S, Ortega, L, Jergel, M, Falcony, C, Brunner, R, Gmucová, K, Zeman, M, van Swaaij, R.A.C.M.M, KuČera, M, Juráni, R, Zahoran, M

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Evidence for the Improved Defect-Pool Model for Gap States in Amorphous Silicon from Charge DLTS Experiments on Undoped a -Si:H von Nádaz̆dy, V., Durný, R., Pinc̆ik, E.

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