Normally-off GaN MOSFETs with high-k dielectric CeO2 films deposited by RF sputtering von Ogawa, Hiroki, Okazaki, Takuya, Kasai, Hayao, Hara, Kenta, Notani, Yuki, Yamamoto, Yasuhiro, Nakamura, Tohru

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Normally-off GaN MOSFETs with high-k dielectric CeO sub(2) films deposited by RF sputtering von Ogawa, Hiroki, Okazaki, Takuya, Kasai, Hayao, Hara, Kenta, Notani, Yuki, Yamamoto, Yasuhiro, Nakamura, Tohru

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Normally‐off GaN MOSFETs with high‐k dielectric CeO 2 films deposited by RF sputtering von Ogawa, Hiroki, Okazaki, Takuya, Kasai, Hayao, Hara, Kenta, Notani, Yuki, Yamamoto, Yasuhiro, Nakamura, Tohru

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Characterization of Al doped CeO2 thin films deposited by O2 introduced Ar sputtering von Yuki, Notani, Kenta, Hara, Takashi, Osawa, Kazuya, Aoki, Keita, Fujiyama, Setsu, Suzuki, Keiji, Ishibashi, Yasuhiro, Yamamoto

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Effect of O2 introduction on Al doped CeO2 thin films deposited by sputtering method (2) von Notani, Ｙｕｋｉ, Okazaki, Takuya, Hara, Kenta, Osawa, Takashi, Hibino, Keisuke, Suzuki, Setsu, Ishibashi, Keiji, Yamamoto, Yasuhiro

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Effect of O2 introduction Al doped CeO2 thin films deposited by sputtering method (1) von Hara, Kenta, Okazaki, Takuya, Notani, Yuki, Osawa, Takashi, Hibino, Keisuke, Suzuki, Setsu, Ishibashi, Keiji, Yamamoto, Yasuhiro

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GRASPING APPARATUS AND GRASPING METHOD von TAKIGUCHI Masaki, NOTANI Yuki

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GRIPPING DEVICE AND GRIPPING METHOD von NOTANI YUKI, TAKIGUCHI MAKI

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O2導入Arスパッタ法により形成したAl添加CeO2薄膜の特性評価 von 野谷, 祐貴, 原, 健太, 大澤, 隆志, 青木, 和也, 藤山, 啓太, 鈴木, 摂, 石橋, 啓次, 山本, 康博

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スパッタ法により形成したO2導入Al添加CeO2薄膜の評価（1） von 原, 健太, 岡崎, 拓也, 野谷, 祐貴, 大澤, 隆志, 日比野, 圭佑, 鈴木, 摂, 石橋, 啓次, 山本, 康博

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スパッタ法により形成したO2導入Al添加CeO2薄膜の評価(2) von 野谷, 祐貴, 岡崎, 拓也, 原, 健太, 大澤, 隆志, 日比野, 圭佑, 鈴木, 摂, 石橋, 啓次, 山本, 康博

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