Large modulation of carrier transport by grain-boundary molecular packing and microstructure in organic thin films von Rivnay, Jonathan, Jimison, Leslie H., Northrup, John E., Toney, Michael F., Noriega, Rodrigo, Lu, Shaofeng, Marks, Tobin J., Facchetti, Antonio, Salleo, Alberto

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Atomic and electronic structure of polymer organic semiconductors: P3HT, PQT, and PBTTT von Northrup, John E.

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GaN and InGaN ( 11 2 ̱ 2 ) surfaces: Group-III adlayers and indium incorporation von Northrup, John E.

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Cutting Edge: IL-12 Inversely Regulates T-bet and Eomesodermin Expression during Pathogen-Induced CD8+ T Cell Differentiation von Takemoto, Naofumi, Intlekofer, Andrew M, Northrup, John T, Wherry, E. John, Reiner, Steven L

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Effector and memory CD8+ T cell fate coupled by T-bet and eomesodermin von Intlekofer, Andrew M, Takemoto, Naofumi, Wherry, E John, Longworth, Sarah A, Northrup, John T, Palanivel, Vikram R, Mullen, Alan C, Gasink, Christopher R, Kaech, Susan M, Miller, Joseph D, Gapin, Laurent, Ryan, Kenneth, Russ, Andreas P, Lindsten, Tullia, Orange, Jordan S, Goldrath, Ananda W, Ahmed, Rafi, Reiner, Steven L

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Electric-Field-Induced Gap States in Pentacene von Knipp, Dietmar, Northrup, John E.

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Role of Side-Chain Branching on Thin-Film Structure and Electronic Properties of Polythiophenes von Himmelberger, Scott, Duong, Duc T., Northrup, John E., Rivnay, Jonathan, Koch, Felix P. V., Beckingham, Bryan S., Stingelin, Natalie, Segalman, Rachel A., Mannsfeld, Stefan C. B., Salleo, Alberto

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Gap states in organic semiconductors:  Hydrogen- and oxygen-induced states in pentacene von Northrup, John E., Chabinyc, Michael L.

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Adatom kinetics on and below the surface: the existence of a new diffusion channel von Neugebauer, Jörg, Zywietz, Tosja K, Scheffler, Matthias, Northrup, John E, Chen, Huajie, Feenstra, R M

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Radiation Induced Hydrogen Rearrangement in Poly(3-alkylthiophene) von Northrup, John E

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Pseudomorphically Grown Ultraviolet C Photopumped Lasers on Bulk AlN Substrates von Wunderer, Thomas, Chua, Christopher L, Yang, Zhihong, Northrup, John E, Johnson, Noble M, Garrett, Gregory A, Shen, Hongen, Wraback, Michael

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Semi-polar nitride surfaces and heterostructures von Strittmatter, André, Northrup, John E., Johnson, Noble M., Kisin, Mikhail V., Spiberg, Philippe, El-Ghoroury, Hussein, Usikov, Alexander, Syrkin, Alexander

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Screw dislocations in GaN: The Ga-filled core model von Northrup, John E.

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Electronic Structure and Mobility of Alkylated and Nonalkylated Organic Semiconductors: Role of van der Waals Interactions von Northrup, John E, Xie, Weiyu, Sun, Yi-Yang, Zhang, Shengbai

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Magnesium incorporation at (0001) inversion domain boundaries in GaN von Northrup, John E.

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In-Well Pumped Blue GaN-Based Vertical-External-Cavity Surface-Emitting Lasers von Wunderer, Thomas, Northrup, John E, Yang, Zhihong, Teepe, Mark, Johnson, Noble M, Rotella, Paul, Wraback, Michael

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Energetics of GaAs(100)-(2×4) and -(4×2) reconstructions von NORTHRUP, J. E, FROYEN, S

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In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers von Wunderer, Thomas, Northrup, John E., Yang, Zhihong, Teepe, Mark, Strittmatter, André, Johnson, Noble M., Rotella, Paul, Wraback, Michael

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The properties, physics, and design of semiconductor devices von Shive, John N. 1913

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Theory of intrinsic and H-passivated screw dislocations in GaN von Northrup, John E.

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