Ultrafast spectral diffusion of GaN defect single photon emitters von Geng, Yifei, Nomoto, Kazuki

Volltext

Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes von Li, Wenshen, Saraswat, Devansh, Long, Yaoyao, Nomoto, Kazuki, Jena, Debdeep, Xing, Huili Grace

Volltext

Thermionic emission or tunneling? The universal transition electric field for ideal Schottky reverse leakage current: A case study in β-Ga2O3 von Li, Wenshen, Nomoto, Kazuki, Jena, Debdeep, Xing, Huili Grace

Volltext

Thermal design of multi-fin Ga2O3 vertical transistors von Chatterjee, Bikramjit, Li, Wenshen, Nomoto, Kazuki, Xing, Huili Grace, Choi, Sukwon

Volltext

High Breakdown Voltage in RF AlN/GaN/AlN Quantum Well HEMTs von Hickman, Austin, Chaudhuri, Reet, Bader, Samuel James, Nomoto, Kazuki, Lee, Kevin, Xing, Huili Grace, Jena, Debdeep

Volltext

Activation of buried p-GaN in MOCVD-regrown vertical structures von Li, Wenshen, Nomoto, Kazuki, Lee, Kevin, Islam, S. M., Hu, Zongyang, Zhu, Mingda, Gao, Xiang, Xie, Jinqiao, Pilla, Manyam, Jena, Debdeep, Xing, Huili Grace

Volltext

Strained GaN quantum-well FETs on single crystal bulk AlN substrates von Qi, Meng, Li, Guowang, Ganguly, Satyaki, Zhao, Pei, Yan, Xiaodong, Verma, Jai, Song, Bo, Zhu, Mingda, Nomoto, Kazuki, Xing, Huili (Grace), Jena, Debdeep

Volltext

Fin-channel orientation dependence of forward conduction in kV-class Ga2O3 trench Schottky barrier diodes von Li, Wenshen, Nomoto, Kazuki, Hu, Zongyang, Jena, Debdeep, Xing, Huili Grace

Volltext

Design and Realization of GaN Trench Junction-Barrier-Schottky-Diodes von Wenshen Li, Nomoto, Kazuki, Pilla, Manyam, Pan, Ming, Xiang Gao, Jena, Debdeep, Xing, Huili Grace

Volltext

N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates von Kim, Eungkyun, Zhang, Zexuan, Encomendero, Jimy, Singhal, Jashan, Nomoto, Kazuki, Hickman, Austin, Wang, Cheng, Fay, Patrick, Toita, Masato, Jena, Debdeep, Xing, Huili Grace

Volltext

Polarization-induced 2D hole gases in pseudomorphic undoped GaN/AlN heterostructures on single-crystal AlN substrates von Zhang, Zexuan, Encomendero, Jimy, Chaudhuri, Reet, Cho, Yongjin, Protasenko, Vladimir, Nomoto, Kazuki, Lee, Kevin, Toita, Masato, Xing, Huili Grace, Jena, Debdeep

Volltext

Single-crystal N-polar GaN p-n diodes by plasma-assisted molecular beam epitaxy von Cho, YongJin, Hu, Zongyang, Nomoto, Kazuki, Xing, Huili Grace, Jena, Debdeep

Volltext

1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon von Mingda Zhu, Bo Song, Meng Qi, Zongyang Hu, Nomoto, Kazuki, Xiaodong Yan, Yu Cao, Johnson, Wayne, Kohn, Erhard, Jena, Debdeep, Xing, Huili Grace

Volltext

Epitaxial ScxAl1−xN on GaN exhibits attractive high-K dielectric properties von Casamento, Joseph, Lee, Hyunjea, Maeda, Takuya, Gund, Ved, Nomoto, Kazuki, van Deurzen, Len, Turner, Wesley, Fay, Patrick, Mu, Sai, Van de Walle, Chris G., Lal, Amit, Xing, Huili (Grace), Jena, Debdeep

Volltext

Bandgap narrowing and Mott transition in Si-doped Al0.7Ga0.3N von Bharadwaj, Shyam, Islam, S. M., Nomoto, Kazuki, Protasenko, Vladimir, Chaney, Alexander, Xing, Huili (Grace), Jena, Debdeep

Volltext

Molecular beam homoepitaxy on bulk AlN enabled by aluminum-assisted surface cleaning von Cho, YongJin, Chang, Celesta S., Lee, Kevin, Gong, Mingli, Nomoto, Kazuki, Toita, Masato, Schowalter, Leo J., Muller, David A., Jena, Debdeep, Xing, Huili Grace

Volltext

High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al0.85Ga0.15N heterostructures on single-crystal AlN substrates von Zhang, Zexuan, Encomendero, Jimy, Kim, Eungkyun, Singhal, Jashan, Cho, YongJin, Nomoto, Kazuki, Toita, Masato, Xing, Huili Grace, Jena, Debdeep

Volltext

Electric field induced migration of native point defects in Ga2O3 devices von Haseman, Micah S., Ramdin, Daram N., Li, Wenshen, Nomoto, Kazuki, Jena, Debdeep, Xing, Huili Grace, Brillson, Leonard J.

Volltext

Ferroelectric AlBN films by molecular beam epitaxy von Savant, Chandrashekhar, Gund, Ved, Nomoto, Kazuki, Maeda, Takuya, Jadhav, Shubham, Lee, Joongwon, Ramesh, Madhav, Kim, Eungkyun, Nguyen, Thai-Son, Chen, Yu-Hsin, Casamento, Joseph, Rana, Farhan, Lal, Amit, Xing, Huili Grace, Jena, Debdeep

Volltext

Optically pumped deep-UV multimode lasing in AlGaN double heterostructure grown by molecular beam homoepitaxy von van Deurzen, Len, Page, Ryan, Protasenko, Vladimir, Nomoto, Kazuki, Xing, Huili (Grace), Jena, Debdeep

Volltext