Closed-Form Expressions of Electric and Magnetic Near-Fields for the Calibration of Near-Field Probes von Boyer, A., Nolhier, N., Caignet, F., Dhia, S. Ben

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Reliability of ESD protection devices designed in a 3D technology von Courivaud, B., Nolhier, N., Ferru, G., Bafleur, M., Caignet, F.

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On-chip measurement to analyze failure mechanisms of ICs under system level ESD stress von Caigneť, F., Nolhier, N., Bafleur, M., Wang, A., Mauran, N.

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Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation von Monnereau, N., Caignet, F., Trémouilles, D., Nolhier, N., Bafleur, M.

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Powering a Commercial Datalogger by Energy Harvesting from Generated Aeroacoustic Noise von Monthéard, R, Airiau, C, Bafleur, M, Boitier, V, Dilhac, J-M, Dollat, X, Nolhier, N, Piot, E

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Electrostatic discharge failure analysis of capacitive RF MEMS switches von Ruan, J., Nolhier, N., Bafleur, M., Bary, L., Coccetti, F., Lisec, T., Plana, R.

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ESD failure signature in capacitive RF MEMS switches von Ruan, J., Papaioannou, G.J., Nolhier, N., Mauran, N., Bafleur, M., Coccetti, F., Plana, R.

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Analytical description of the injection ratio of self-biased bipolar transistors under the very high injection conditions of ESD events von Gendron, A., Renaud, P., Bafleur, M., Nolhier, N.

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Accelerated lifetime test of RF-MEMS switches under ESD stress von Ruan, J., Nolhier, N., Papaioannou, G.J., Trémouilles, D., Puyal, V., Villeneuve, C., Idda, T., Coccetti, F., Plana, R.

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Transient voltage overshoots of high voltage ESD protections based on bipolar transistors in smart power technology von Delmas, A, Gendron, A, Bafleur, M, Nolhier, N, Gill, C

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Latch-up ring design guidelines to improve electrostatic discharge (ESD) protection scheme efficiency von Tremouilles, D., Bafleur, M., Bertrand, G., Nolhier, N., Mauran, N., Lescouzeres, L.

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Prediction of LIN communication robustness against EFT events using dedicated failure models von Escudié, F., Caignet, F., Nolhier, N., Bafleur, M.

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Analysis and compact modeling of a vertical grounded-base n-p-n bipolar transistor used as ESD protection in a smart power technology von Bertrand, G., Delage, C., Bafleur, M., Nolhier, N., Dorkel, J.-M., Nguyen, Q., Mauran, N., Tremouilles, D., Perdu, P.

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20GHz on-chip measurement of ESD waveform for system level analysis von Caignet, F., Nolhier, N., Bafleur, M., Wang, A., Mauran, N.

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Impact of non-linear capacitances on transient waveforms during system level ESD stress von Escudié, F., Caignet, F., Nolhier, N., Bafleur, M.

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A System-Level Electrostatic-Discharge-Protection Modeling Methodology for Time-Domain Analysis von Monnereau, N., Caignet, F., Tremouilles, D., Nolhier, N., Bafleur, M.

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Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure von Guitard, N., Essely, F., Trémouilles, D., Bafleur, M., Nolhier, N., Perdu, P., Touboul, A., Pouget, V., Lewis, D.

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Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation : ADVANCES IN ELECTROSTATIC DISCHARGE (ESD) PROTECTION FOR ICs von MONNEREAU, N, CAIGNET, F, TREMOUILLES, D, NOLHIER, N, BAFLEUR, M

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Low Frequency Noise Measurements for ESD Latent Defect Detection in High Reliability Applications von GUITARD, N, TREMOUILLES, D, BAFLEUR, M, ESCOTTE, L, BARY, L, PERDU, P, SARRABAYROUSE, G, NOLHIER, N, REYNA-ROJAS, R

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Determination of the ESD Failure Cause Through its Signature von Zecri, M., Besse, P., Givelin, P., Nayrolles, M., Bafleur, M., Nolhier, N.

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