Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors von Noh, Hyeon-Kyun, Chang, K. J., Ryu, Byungki, Lee, Woo-Jin

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O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors von Ryu, Byungki, Noh, Hyeon-Kyun, Choi, Eun-Ae, Chang, K. J.

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Effect of hydrogen incorporation on the negative bias illumination stress instability in amorphous In-Ga-Zn-O thin-film-transistors von Noh, Hyeon-Kyun, Park, Ji-Sang, Chang, K. J.

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In0.53Ga0.47As-Based nMOSFET Design for Low Standby Power Applications von Bhuwalka, Krishna K., Zhenhua Wu, Hyeon-Kyun Noh, Wonsok Lee, Cantoro, Mirco, Yeon-Cheol Heo, Seonghoon Jin, Woosung Choi, Uihui Kwon, Maeda, Shigenobu, Keun-Ho Lee, Young-Kwan Park

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The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In-Ga-Zn-O thin film transistors von Oh, Young Jun, Noh, Hyeon-Kyun, Chang, Kee Joo

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A simulation physics-guided neural network for predicting semiconductor structure with few experimental data von Kim, QHwan, Lee, Sunghee, Ma, Ami, Kim, Jaeyoon, Noh, Hyeon-Kyun, Chang, Kyu Baik, Cheon, Wooyoung, Yi, Shinwook, Jeong, Jaehoon, Kim, BongSeok, Kim, Young-Seok, Kim, Dae Sin

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Ab initio study of boron segregation and deactivation at Si/SiO2 interface von YOUNG JUN OH, HWANG, Jin-Heui, NOH, Hyeon-Kyun, BANG, Junhyeok, RYU, Byungki, CHANG, K. J

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Local bonding effect on the defect states of oxygen vacancy in amorphous HfSiO4 von Noh, Hyeon-Kyun, Ryu, Byungki, Choi, Eun-Ae, Bang, Junhyeok, Chang, K. J.

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One-Loop Scalar Integrals Contributing to Resummation of Relativistic Corrections to Gamma von Jungil, Jungil, Hyeon-Kyun, Hyeon-Kyun, Chaehyun, Chaehyun

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O-vacancy as the origin of negative bias illumination stress instabilityin amorphous In-Ga-Zn-O thin film transistors von Ryu, Byungki, Noh, Hyeon-Kyun, Choi, Eun-Ae, Chang, K. J.

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First-principles study of the segregation of boron dopants near the interface between crystalline Si and amorphous SiO2 von Oh, Young Jun, Noh, Hyeon-Kyun, Chang, K.J.

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Ab initio study of boron segregation and deactivation at Si/SiO 2 interface von Oh, Young Jun, Hwang, Jin-Heui, Noh, Hyeon-Kyun, Bang, Junhyeok, Ryu, Byungki, Chang, K.J.

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Ab initio study of boron segregation and deactivation at Si/SiO sub(2 interface) von Oh, Young Jun, Hwang, Jin-Heui, Noh, Hyeon-Kyun, Bang, Junhyeok, Ryu, Byungki, Chang, K J

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Effect of O-vacancy defects on the Schottky barrier heights in Ni/SiO2 and Ni/HfO2 interfaces von Noh, Hyeon-Kyun, Oh, Young Jun, Chang, K.J.

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Local bonding effect on the defect states of oxygen vacancy in amorphous HfSiO 4 von Noh, Hyeon-Kyun, Ryu, Byungki, Choi, Eun-Ae, Bang, Junhyeok, Chang, K. J.

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O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors von Ryu, Byungki, Hyeon-Kyun Noh, Choi, Eun-Ae, Chang, K J

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First-principles study of Si CMOS materials and nanostructures von Kee Joo Chang, Hyeon-Kyun Noh, Eun-Ae Choi, Byungki Ryu

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Simulation system for semiconductor process and simulation method thereof von Park, Min-Chul, Jang, Hyunjae, Jeong, Changwook, Noh, Hyeon Kyun, Huh, In, Myung, Sanghoon

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SIMULATION SYSTEM FOR SEMICONDUCTOR PROCESS AND SIMULATION METHOD THEREOF von Park, Min-Chul, Jang, Hyunjae, Jeong, Changwook, Noh, Hyeon Kyun, Huh, In, MYUNG, Sanghoon

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Hybrid functional versus quasiparticle calculations for the Schottky barrier and effective work function at TiN/HfO sub(2) interface von Oh, Young Jun, Lee, Alex Taekyung, Noh, Hyeon-Kyun, Chang, K J

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