High-Performance p-Channel LDMOS Transistors and Wide-Range Voltage Platform Technology Using Novel p-Channel Structure von Shimamoto, S., Yanagida, Y., Shirakawa, S., Miyakoshi, K., Oshima, T., Sakano, J., Wada, S., Noguchi, J.

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Influence of CMP Slurries and Post-CMP Cleaning Solutions on Cu Interconnects and TDDB Reliability von Yamada, Yohei, Konishi, Nobuhiro, Noguchi, Junji, Jimbo, Tomoko

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Fairness Analysis in Goal-Oriented Requirements Selection von Horita, Hiroki, Noguchi, Junji

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Crystal structure of the rice branching enzyme I (BEI) in complex with maltopentaose von Chaen, Kimiko, Noguchi, Junji, Omori, Toshiro, Kakuta, Yoshimitsu, Kimura, Makoto

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Design of a Reliable p-Channel LDMOS FET With RESURF Technology von Miyoshi, Tomoyuki, Tominari, Tatsuya, Fujiwara, Hiroaki, Oshima, Takayuki, Noguchi, Junji

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Sacrificial CVD film etch-back process for air-gap Cu interconnects von Uno, Shoichi, Katsuyama, Kiyomi, Noguchi, Junji, Sato, Kiyohiko, Oshima, Takayuki, Katsuyama, Masanori, Hara, Kazusato

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Study on Factors in Time-Dependent Dielectric Breakdown Degradation of Cu/Low-k Integration Related to Cu Chemical–Mechanical Polishing von Yamada, Yohei, Konishi, Nobuhiro, Noguchi, Junji, Jimbo, Tomoko, Kurokawa, Syuhei, Doi, Toshiro

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Control of photocorrosion in the copper damascene process von HOMMA, Y, KONDO, S, SAKUMA, N, HINODE, K, NOGUCHI, J, OHASHI, N, YAMAGUCHI, H, OWADA, N

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Dominant factors in TDDB degradation of Cu interconnects von Noguchi, J.

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Influence of Cu-Ion Migration and Fine-Line Effect on Time-Dependent Dielectric Breakdown Lifetime of Cu Interconnects von Noguchi, Junji, Kubo, Maki, Tsuneda, Ruriko, Takeda, Ken-ichi, Miura, Noriko, Makabe, Kazuya

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Technologies for suppressing charge-traps in novel p-channel Field-MOSFET with thick gate oxide von Miyoshi, Tomoyuki, Oshima, Takayuki, Noguchi, Junji

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Impact of Self-Aligned Metal Capping Method on Submicron Copper Interconnections von Saito, Tatsuyuki, Noguchi, Junji, Kubo, Maki, Imai, Toshinori, Ito, Yuko

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Crystal structure of the branching enzyme I (BEI) from Oryza sativa L with implications for catalysis and substrate binding von Noguchi, Junji, Chaen, Kimiko, Vu, Nhuan Thi, Akasaka, Taiki, Shimada, Hiroaki, Nakashima, Takashi, Nishi, Aiko, Satoh, Hikaru, Omori, Toshiro, Kakuta, Yoshimitsu, Kimura, Makoto

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Design of Novel 300-V Field-MOS FETs With Low on-Resistance for Analog Switch Circuits von Miyoshi, T., Tominari, T., Hayashi, Y., Yoshinaga, M., Oshima, T., Wada, S., Noguchi, J.

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Crystal structure of the covalent intermediate of human cytosolic β-glucosidase von Noguchi, Junji, Hayashi, Yasuhiro, Baba, Yuichi, Okino, Nozomu, Kimura, Makoto, Ito, Makoto, Kakuta, Yoshimitsu

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Light Emission Analysis of Dielectric Breakdown in Stressed Damascene Copper Interconnection von Takeda, Ken-ichi, Hinode, Kenji, Noguchi, Junji, Yamaguchi, Hizuru

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Multilevel Interconnect With Air-Gap Structure for Next-Generation Interconnections von Noguchi, J., Oshima, T., Matsumoto, T., Uno, S., Sato, K.

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Multilevel Interconnect With Air-Gap Structure von NOGUCHI, Junji, OSHIMA, Takayuki, MATSUMOTO, Takashi, UNO, Shoichi, SATO, Kiyohiko

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Influence of post-CMP cleaning on Cu interconnects and TDDB reliability von Noguchi, J., Konishi, N., Yamada, Y.

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Dependence of Time-Dependent Dielectric Breakdown Lifetime on the Structure in Cu Metallization von Noguchi, Junji, Saito, Tatsuyuki, Maruyama, Hiroyuki, Kubo, Maki, Ohashi, Naofumi, Takeda, Ken-ichi

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