Growth and properties of semi-polar GaN on a patterned silicon substrate von Sawaki, Nobuhiko, Hikosaka, Toshiki, Koide, Norikatsu, Tanaka, Shigeyasu, Honda, Yoshio, Yamaguchi, Masahito

Volltext

Semi-polar GaN LEDs on Si substrate von Sawaki, Nobuhiko, Honda, Yoshio

Volltext

Nature of yellow luminescence band in GaN grown on Si substrate von Ito, Shogo, Nakagita, Taihei, Sawaki, Nobuhiko, Ahn, Hyung Soo, Irie, Masashi, Hikosaka, Toshiki, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

Volltext

Growth of ( [formula omitted]) GaN on a 7-degree off-oriented (0 0 1)Si substrate by selective MOVPE von Honda, Yoshio, Kameshiro, Norifumi, Yamaguchi, Masahito, Sawaki, Nobuhiko

Volltext

Reduction of Mg segregation in a metalorganic vapor phase epitaxial grown GaN layer by a low-temperature AlN interlayer von Tomita, Kazuyoshi, Itoh, Kenji, Ishiguro, Osamu, Kachi, Tetsu, Sawaki, Nobuhiko

Volltext

AlN and AlGaN layers grown on Si(111) substrate by mixed-source hydride vapor phase epitaxy method von Jeon, Hunsoo, Jeon, Injun, Lee, Gang Seok, Bae, Sung Geun, Ahn, Hyung Soo, Yang, Min, Yi, Sam Nyung, Yu, Young Moon, Honda, Yoshio, Sawaki, Nobuhiko, Kim, Suck-Whan

Volltext

Mechanism of light emission and manufacturing process of vertical-type light-emitting diode grown by hydride vapor phase epitaxy von Lee, Gang Seok, Jeon, Hunsoo, Ahn, Hyung Soo, Yang, Min, Yi, Sam Nyung, Yu, Young Moon, Lee, Sang Chil, Honda, Yoshio, Sawaki, Nobuhiko, Kim, Suck-Whan

Volltext

Growth of AlN layer on patterned sapphire substrate by hydride vapor phase epitaxy von Lee, Gang Seok, Lee, Chanmi, Jeon, Hunsoo, Lee, Chanbin, Bae, Sung Geun, Ahn, Hyung Soo, Yang, Min, Yi, Sam Nyung, Yu, Young Moon, Lee, Jae Hak, Honda, Yoshio, Sawaki, Nobuhiko, Kim, Suck-Whan

Volltext

Fabrication of selective-area growth InGaN LED by mixed-source hydride vapor-phase epitaxy von Bae, Sung Geun, Jeon, Injun, Jeon, Hunsoo, Kim, Kyoung Hwa, Yang, Min, Yi, Sam Nyung, Lee, Jae Hak, Ahn, Hyung Soo, Yu, Young Moon, Sawaki, Nobuhiko, Kim, Suck-Whan

Volltext

Impurity incorporation in semipolar (1-1 0 1) GaN grown on an Si substrate von Sawaki, Nobuhiko, Hagiwara, Kiyotaka, Hikosaka, Toshiki, Honda, Yoshio

Volltext

Mg segregation in a (1 1¯ 0 1) GaN grown on a 7° off-axis (0 0 1) Si substrate by MOVPE von Tomita, Kazuyoshi, Hikosaka, Toshiki, Kachi, Tetsu, Sawaki, Nobuhiko

Volltext

Strain relaxation in thick ($1{bar {1}}01$) InGaN grown on GaN/Si substrate von Tanikawa, Tomoyuki, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi, Sawaki, Nobuhiko

Volltext

Thick AlN epilayer grown by using the HVPE method von Jeon, Hunsoo, Lee, Chanmi, Lee, Chanbin, Yang, Min, Yi, Sam Nyung, Ahn, Hyung Soo, Yu, Young Moon, Lee, Sang Chil, Kim, Suck-Whan, Sawaki, Nobuhiko

Volltext

Fabrication of GaN hexagonal pyramids on dot-patterned GaN/sapphire substrates via selective metalorganic vapor phase epitaxy von KITAMURA, S, HIRAMATSU, K, SAWAKI, N

Volltext

Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates von Chiu, Ching-Hsueh, Lin, Da-Wei, Lin, Chien-Chung, Li, Zhen-Yu, Chang, Wei-Ting, Hsu, Hung-Wen, Kuo, Hao-Chung, Lu, Tien-Chang, Wang, Shing-Chung, Liao, Wei-Tsai, Tanikawa, Tomoyuki, Honda, Yoshio, Yamaguchi, Masahito, Sawaki, Nobuhiko

Volltext

Selective growth of wurtzite GaN and AlxGa1− xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy von Kato, Yoshiki, Kitamura, Shota, Hiramatsu, Kazumasa, Sawaki, Nobuhiko

Volltext

Carbon microspheres grown by using hydride vapor phase epitaxy von Jeon, Hunsoo, Lee, Chanmi, Park, Minah, Lee, Chanbin, Yi, Sam Nyung, Yang, Min, Ahn, Hyung Soo, Kim, Suck-Whan, Yu, Young Moon, Shin, Kee Sam, Bae, Jong Seong, Sawaki, Nobuhiko

Volltext

Mg doping in (1 1¯ 0 1)GaN grown on a 7° off-axis (0 0 1)Si substrate by selective MOVPE von Hikosaka, Toshiki, Koide, Norikatsu, Honda, Yoshio, Yamaguchi, Masahito, Sawaki, Nobuhiko

Volltext

Defect structure in selective area growth GaN pyramid on (111)Si substrate von Tanaka, Shigeyasu, Kawaguchi, Yasutoshi, Sawaki, Nobuhiko, Hibino, Michio, Hiramatsu, Kazumasa

Volltext

Drastic Reduction of Dislocation Density in Semipolar ($11\bar{2}2$) GaN Stripe Crystal on Si Substrate by Dual Selective Metal--Organic Vapor Phase Epitaxy von Murase, Tasuku, Tanikawa, Tomoyuki, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi, Sawaki, Nobuhiko

Volltext