Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN von Sugahara, Tomoya, Sato, Hisao, Hao, Maosheng, Naoi, Yoshiki, Kurai, Satoshi, Tottori, Satoru, Yamashita, Kenji, Nishino, Katsushi, Romano, Linda T., Sakai, Shiro

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Nucleation control in the growth of bulk GaN by sublimation method von KURAI, S, NISHINO, K, SAKAI, S

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Evaluation and re-growth of p-GaN on nano-patterned GaN on sapphire substrate von Nariyuki, Yuji, Matsumoto, Masakazu, Noda, Takeshi, Nishino, Katsushi, Naoi, Yoshiki, Sakai, Shiro, Fukano, Atsuyuki, Tanaka, Satoru

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Growth and Charactertics of GaN Film on Thin AlN/(0001) Sapphire Template Layer via Direct Reaction of Gallium and Ammonia von Yan, Fawang, Nishino, Katsushi, Sakai, Shiro

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Growth of AlN and GaN by Metalorganic Chemical Vapor Deposition on BP Synthesized by Flux Method von Yamamoto, Mamiko, Hamazaki, Yuta, Tsukihara, Masashi, Naoi, Yoshiki, Nishino, Katsushi, Sakai, Shiro

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Reduction of double positioning twinning in 3C-SiC grown on α-SiC substrates von NISHINO, K, KIMOTO, T, MATSUNAMI, H

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Effect of supply temperature in crystal growth of β-Ga2O3 by direct synthesis method von Kanmoto, Shota, Nishino, Katsushi

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Photoluminescence of 3C-SiC epilayers grown on lattice-matched substrates von NISHINO, K, KIMOTO, T, MATSUNAMI, H

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Effect of GaNP Buffer Layer on AlGaN Epilayers Deposited on (0001) Sapphire Substrates by Metalorganic Chemical Vapor Deposition von Okimoto, Takashi, Tsukihara, Masashi, Sumiyoshi, Kazuhide, Kataoka, Ken, Nishino, Katsushi, Naoi, Yoshiki, Sakai, Shiro

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Effect of in situ annealing on BaSi2 evaporated films with low deposition rate von Nishio, Souma, Mori, Shunnosuke, Nishino, Katsushi

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Self-Separation of Sublimation-Grown AlN with AlSiN Buffer Layer von Nishino, Katsushi, Nakauchi, Jun, Hayashi, Kotaro, Tsukihara, Masashi

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Photoluminescence of homoepitaxial 3C-SiC on sublimation-grown 3C-SiC substrates von NISHINO, K, KIMOTO, T, MATSUNAMI, H

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Effect of low-rate-growth of BaSi2 thin film on film quality von Mori, Shunnosuke, Nishio, Souma, Nishino, Katsushi

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Time-resolved spectroscopy of excitonic luminescence from GaN homoepitaxial layers von Yamada, Yoichi, Sasaki, Chiharu, Kurai, Satoshi, Taguchi, Tsunemasa, Sugahara, Tomoya, Nishino, Katsushi, Sakai, Shiro

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Crystal growth of β-Ga2O3 by direct synthesis method von Ichimura, Yuta, Nishino, Katsushi

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Effect of evaporation source condition on quality of BaSi2 films von Nishio, Souma, Naito, Yuki, Nishino, Katsushi

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Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer von Lee, Young-Bae, Wang, Tao, Liu, Yu-Huai, Ao, Jin-Ping, Li, Hong-Dong, Sato, Hisao, Nishino, Katsushi, Naoi, Yoshiki, Sakai, Shiro

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Effect of Oxygen on the Activation of Mg Acceptor in GaN Epilayers Grown by Metalorganic Chemical Vapor Deposition von Chung, Sung Hoon, Lachab, Mohamed, Wang, Tao, Lacroix, Yves, Basak, Durga, Fareed, Qhalid, Kawakami, Yoshihisa, Nishino, Katsushi, Sakai, Shiro

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Fabrication of β-Ga2O3 nanowires by direct synthesis method von Hino, Yuya, Nishino, Katsushi

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Surface Pretreatment of Bulk GaN for Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition von Sato, Hisao, Sugahara, Tomoya, Hao, Maosheng, Naoi, Yoshiki, Kurai, Satoshi, Yamashita, Kenji, Nishino, Katsushi, Sakai, Shiro

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