Analysis of ac surface photovoltages in a depleted oxidized p-type silicon wafer von MUNAKATA, C, NISHIMATSU, S

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Grain Growth Mechanism of Heavily Phosphorus‐Implanted Polycrystalline Silicon von Wada, Yasuo, Nishimatsu, Shigeru

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Mechanism of E' center generation in SiO2 film by ion and neutral beam bombardment von YOKOGAWA, K, YAJIMA, Y, MIZUTANI, T, NISHIMATSU, S, NINOMIYA, K

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Role of sulfur atoms in microwave plasma etching of silicon von NINOMIYA, K, SUZUKI, K, NISHIMATSU, S, OKADA, O

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Ac surface photovoltages in strongly-inverted oxidized p-type silicon wafers von MUNAKATA, C, NISHIMATSU, S, HONMA, N, YAGI, K

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Mechanism of E' Center Generation in SiO 2 Film by Ion and Neutral Beam Bombardment von Yokogawa, Ken'etsu, Yajima, Yusuke, Mizutani, Tatsumi, Shigeru Nishimatsu, Shigeru Nishimatsu, Ken Ninomiya, Ken Ninomiya

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Positive charges and E' centers formed by vacuum ultraviolet radiation in SiO2 grown on Si von YOKOGAWA, K, YAJIMA, Y, MIZUTANI, T, NISHIMATSU, S, SUZUKI, K

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Vibrational and rotational energy distributions in a hot Cl2 molecular beam von HIRAOKA, S, SUZUKI, K, NISHIMATSU, S

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Fabrication of an axisymmetric Wolter type I mirror with a gold deposited reflecting surface von NINOMIYA, K, HONDA, K, AOKI, S, NISHIMATSU, S, SUZUKI, K

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Titration Method for Measuring Fluorine Atom Concentration in Microwave Plasma Etching von Ninomiya, Ken, Suzuki, Keizo, Nishimatsu, Shigeru

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Si etching with a hot SF6 beam and the etching mechanism von SUZUKI, K, NINOMIYA, K, NISHIMATSU, S, OKADA, O

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Analytical Investigation of Plasma and Electrode Potentials in a Diode Type RF Discharge von Suzuki, Keizo, Ninomiya, Ken, Nishimatsu, Shigeru, Jr, J. W. Thoman, Steinfeld, J. I.

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Si Etching with a hot SF6 beam von SUZUKI, K, NINOMIYA, K, NISHIMATSU, S, OKADA, O

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Application of High Current Arsenic Ion Implantation to Dynamic MOS Memory LSI's von Wada, Yasuo, Nishimatsu, Shigeru

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Arsenic Ion Channeling through Single Crystal Silicon von Wada, Yasuo, Nishimatsu, Shigeru, Hashimoto, Norikazu

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Anisotropic etching of polycrystalline silicon with a hot Cl2 molecular beam von SUZUKI, K, HIRAOKA, S, NISHIMATSU, S

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Reaction of atomic fluorine with silicon von NINOMIYA, K, SUZUKI, K, NISHIMATSU, S, OKADA, O

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Resistivity Lowering Limitations of Heavily Doped Polycrystalline Silicon von WADA, Yasuo, NISHIMATSU, Shigeru

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Short Channel MOS-IC Based on Accurate Two Dimensional Device Design von Hori, Ryoichi, Masuda, Hiroo, Minato, Osamu, Nishimatsu, Shigeru, Sato, Kikuji, Kubo, Masaharu

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Depth Profile of Neutral Planar Tetravacancies in 3 MeV Phosphorus Implanted Silicon as Studied by EPR von Yajima, Yusuke, Natsuaki, Nobuyoshi, Nishimatsu, Shigeru

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