Power generator driven by Maxwell’s demon von Chida, Kensaku, Desai, Samarth, Nishiguchi, Katsuhiko, Fujiwara, Akira

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Valley splitting by extended zone effective mass approximation incorporating strain in silicon von Noborisaka, Jinichiro, Hayashi, Toshiaki, Fujiwara, Akira, Nishiguchi, Katsuhiko

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Noise-to-energy conversion in a nanometer-scale dot observed with electron counting statistics von Chida, Kensaku, Fujiwara, Akira, Nishiguchi, Katsuhiko

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Seebeck effect in a nanometer-scale dot in a Si nanowire observed with electron counting statistics von Chida, Kensaku, Fujiwara, Akira, Nishiguchi, Katsuhiko

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Publisher Correction: Power generator driven by Maxwell’s demon von Chida, Kensaku, Desai, Samarth, Nishiguchi, Katsuhiko, Fujiwara, Akira

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Gigahertz single-trap electron pumps in silicon von Yamahata, Gento, Nishiguchi, Katsuhiko, Fujiwara, Akira

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Statistical Properties of Electric Potentials in a Variable-Range Hopping Regime von Hayashi, Toshiaki, Tokura, Yasuhiro, Nishiguchi, Katsuhiko

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Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor von Fujiwara, Akira, Nishiguchi, Katsuhiko, Ono, Yukinori

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Detecting signals buried in noise via nanowire transistors using stochastic resonance von Nishiguchi, Katsuhiko, Fujiwara, Akira

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Thermal-noise suppression in nano-scale Si field-effect transistors by feedback control based on single-electron detection von Chida, Kensaku, Nishiguchi, Katsuhiko, Yamahata, Gento, Tanaka, Hirotaka, Fujiwara, Akira

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Room-temperature several-hundred-of-megahertz charge sensing with single-electron resolution using a silicon transistor von Nishiguchi, Katsuhiko, Yamaguchi, Hiroshi, Fujiwara, Akira, van der Zant, Herre S. J., Steele, Gary A.

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(Invited) Single-Electron Manipulation in an Attofarad-Capacitor DRAM von Nishiguchi, Katsuhiko, Chida, Kensaku, Fujiwara, Akira

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Highly nitrogen-vacancy doped diamond nanostructures fabricated by ion implantation and optimum annealing von Sumikura, Hisashi, Hirama, Kazuyuki, Nishiguchi, Katsuhiko, Shinya, Akihiko, Notomi, Masaya

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Accuracy evaluation of single-electron shuttle transfer in Si nanowire metal-oxide-semiconductor field-effect transistors von Yamahata, Gento, Nishiguchi, Katsuhiko, Fujiwara, Akira

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Sub-Femtoampere-Current Detection Using Single-Electron Sensor Operated Around 295 K von Nishiguchi, Katsuhiko, Yamahata, Gento

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Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode von Nishiguchi, Katsuhiko, Castellanos-Gomez, Andres, Yamaguchi, Hiroshi, Fujiwara, Akira, van der Zant, Herre S. J., Steele, Gary A.

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Fabrication and single-electron-transfer operation of a triple-dot single-electron transistor von Jo, Mingyu, Uchida, Takafumi, Tsurumaki-Fukuchi, Atsushi, Arita, Masashi, Fujiwara, Akira, Ono, Yukinori, Nishiguchi, Katsuhiko, Inokawa, Hiroshi, Takahashi, Yasuo

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Microprocesses and Nanotechnology

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Fast all-optical switching using ion-implanted silicon photonic crystal nanocavities von Tanabe, Takasumi, Nishiguchi, Katsuhiko, Shinya, Akihiko, Kuramochi, Eiichi, Inokawa, Hiroshi, Notomi, Masaya, Yamada, Koji, Tsuchizawa, Tai, Watanabe, Toshifumi, Fukuda, Hiroshi, Shinojima, Hiroyuki, Itabashi, Seiichi

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Nanowire Metal--Oxide--Semiconductor Field-Effect Transistors with Small Subthreshold Swing Driven by Body-Bias Effect von Nishiguchi, Katsuhiko, Fujiwara, Akira

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