Simple model for electrical hole spin manipulation in semiconductor quantum dots: Impact of dot material and orientation von Venitucci, Benjamin, Niquet, Yann-Michel

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Effects of Strain on the Carrier Mobility in Silicon Nanowires von Niquet, Yann-Michel, Delerue, Christophe, Krzeminski, Christophe

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Charge transport in chemically doped 2D graphene von Lherbier, Aurélien, Blase, X, Niquet, Yann-Michel, Triozon, François, Roche, Stephan

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Carrier mobility in strained Ge nanowires von Niquet, Yann-Michel, Delerue, Christophe

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Transport properties of graphene containing structural defects von Lherbier, Aurélien, Dubois, Simon M.-M., Declerck, Xavier, Niquet, Yann-Michel, Roche, Stephan, Charlier, Jean-Christophe

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Few-Electron Edge-State Quantum Dots in a Silicon Nanowire Field-Effect Transistor von Voisin, Benoit, Nguyen, Viet-Hung, Renard, Julien, Jehl, Xavier, Barraud, Sylvain, Triozon, François, Vinet, Maud, Duchemin, Ivan, Niquet, Yann-Michel, de Franceschi, Silvano, Sanquer, Marc

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Transport length scales in disordered graphene-based materials: strong localization regimes and dimensionality effects von Lherbier, Aurélien, Biel, Blanca, Niquet, Yann-Michel, Roche, Stephan

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Gate reflectometry in dense quantum dot arrays von Ansaloni, Fabio, Bohuslavskyi, Heorhii, Fedele, Federico, Rasmussen, Torbjørn, Brovang, Bertram, Berritta, Fabrizio, Heskes, Amber, Li, Jing, Hutin, Louis, Venitucci, Benjamin, Bertrand, Benoit, Vinet, Maud, Niquet, Yann-Michel, Chatterjee, Anasua, Kuemmeth, Ferdinand

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Quantum calculations of the carrier mobility: Methodology, Matthiessen's rule, and comparison with semi-classical approaches von Niquet, Yann-Michel, Nguyen, Viet-Hung, Triozon, François, Duchemin, Ivan, Nier, Olivier, Rideau, Denis

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Theoretical investigation of the phonon-limited carrier mobility in (001) Si films von Li, Jing, Lampin, Evelyne, Delerue, Christophe, Niquet, Yann-Michel

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Atomistic Boron-Doped Graphene Field-Effect Transistors: A Route toward Unipolar Characteristics von Marconcini, Paolo, Cresti, Alessandro, Triozon, François, Fiori, Gianluca, Biel, Blanca, Niquet, Yann-Michel, Macucci, Massimo, Roche, Stephan

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Magnetic-Phase Dependence of the Spin Carrier Mean Free Path in Graphene Nanoribbons von Li, Jing, Niquet, Yann-Michel, Delerue, Christophe

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Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot von Corna, Andrea, Bourdet, Léo, Maurand, Romain, Crippa, Alessandro, Kotekar-Patil, Dharmraj, Bohuslavskyi, Heorhii, Laviéville, Romain, Hutin, Louis, Barraud, Sylvain, Jehl, Xavier, Vinet, Maud, De Franceschi, Silvano, Niquet, Yann-Michel, Sanquer, Marc

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Spin Readout of a CMOS Quantum Dot by Gate Reflectometry and Spin-Dependent Tunneling von Ciriano-Tejel, Virginia N., Fogarty, Michael A., Schaal, Simon, Hutin, Louis, Bertrand, Benoit, Ibberson, Lisa, Gonzalez-Zalba, M. Fernando, Li, Jing, Niquet, Yann-Michel, Vinet, Maud, Morton, John J.L.

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Drift velocity versus electric field in ⟨110⟩ Si nanowires: Strong confinement effects von Li, Jing, Mugny, Gabriel, Niquet, Yann-Michel, Delerue, Christophe

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Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation von Lundberg, Theodor, Li, Jing, Hutin, Louis, Bertrand, Benoit, Ibberson, David J., Lee, Chang-Min, Niegemann, David J., Urdampilleta, Matias, Stelmashenko, Nadia, Meunier, Tristan, Robinson, Jason W. A., Ibberson, Lisa, Vinet, Maud, Niquet, Yann-Michel, Gonzalez-Zalba, M. Fernando

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Anisotropic transport properties of quasiballistic InAs nanowires under high magnetic field von Vigneau, Florian, Zeng, Zaiping, Escoffier, Walter, Caroff, Philippe, Leturcq, Renaud, Niquet, Yann-Michel, Raquet, Bertrand, Goiran, Michel

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All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology von Bourdet, Leo, Hutin, Louis, Bertrand, Benoit, Corna, Andrea, Bohuslavskyi, Heorhii, Amisse, Anthony, Crippa, Alessandro, Maurand, Romain, Barraud, Sylvain, Urdampilleta, Matias, Bauerle, Christopher, Meunier, Tristan, Sanquer, Marc, Jehl, Xavier, De Franceschi, Silvano, Niquet, Yann-Michel, Vinet, Maud

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All-electrical manipulation of silicon spin qubits with tunable spin-valley mixing von Bourdet, Léo, Niquet, Yann-Michel

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Electrical manipulation of semiconductor spin qubits within the g -matrix formalism von Venitucci, Benjamin, Bourdet, Léo, Pouzada, Daniel, Niquet, Yann-Michel

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