Limiting Factors of the Safe Operating Area for Power Devices von Schulze, H-J, Niedernostheide, F-J, Pfirsch, F., Baburske, R.

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Silicon Thyristors for Ultrahigh Power (GW) Applications von Vobecky, Jan, Schulze, Hans-Joachim, Streit, Peter, Niedernostheide, Franz-Josef, Botan, Virgiliu, Przybilla, Jens, Kellner-Werdehausen, Uwe, Bellini, M.

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Progress in IGBT development von Niedernostheide, Franz-Josef, Schulze, Hans-Joachim, Laska, Thomas, Philippou, Alexander

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Al modification as indicator of current filaments in IGBTs under repetitive SC operation von Mysore, Madhu Lakshman, Bhojani, Riteshkumar, Kowalsky, Jens, Lutz, Josef, Baburske, Roman, Schulze, Hans-Joachim, Niedernostheide, Franz-Josef

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Fabrication of IGBTs using 300 mm magnetic Czochralski substrates von Schulze, Hans-Joachim, Öfner, Helmut, Niedernostheide, Franz-Josef, Lükermann, Florian, Schulz, Andreas

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Defect engineering for modern power devices von Job, Reinhart, Laven, Johannes G., Niedernostheide, Franz-Josef, Schulze, Hans-Joachim, Schulze, Holger, Schustereder, Werner

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Switching ruggedness and surge-current capability of diodes using the self-adjusting p emitter efficiency diode concept von Basler, Thomas, Pfaffenlehner, Manfred, Felsl, Hans Peter, Niedernostheide, Franz-Josef, Pfirsch, Frank, Schulze, Hans-Joachim, Baburske, Roman, Lutz, Josef

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Fabrication of Medium Power Insulated Gate Bipolar Transistors Using 300 mm Magnetic Czochralski Silicon Wafers von Schulze, Hans-Joachim, Öfner, Helmut, Niedernostheide, Franz-Josef, Lükermann, Florian, Schulz, Andreas

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Cathode-Side Current Filaments in High-Voltage Power Diodes Beyond the SOA Limit von Baburske, R., Niedernostheide, F., Lutz, J., Schulze, H., Falck, E., Bauer, J. G.

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Charge-Carrier Plasma Dynamics During the Reverse-Recovery Period in p+-n--n+ Diodes von BABURSKE, Roman, HEINZE, Birk, LUTZ, Josef, NIEDERNOSTHEIDE, Franz-Josef

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Optimization of diodes using the SPEED concept and CIBH von Pfaffenlehner, M., Felsl, Hans-Peter, Niedernostheide, F.-J, Pfirsch, F., Schulze, H.-J, Baburske, R., Lutz, J.

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Nonlinear Dynamics and Pattern Formation in Semiconductors and Devices: Proceedings of a Symposium Organized Along with the International Conference on Nonlinear Dynamics and Patte... von Niedernostheide, Franz-Josef

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Destruction behavior of power diodes beyond the SOA limit von Baburske, R., Niedernostheide, F., Falck, E., Lutz, J., Schulze, H., Bauer, J.

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Charge-Carrier Plasma Dynamics During the Reverse-Recovery Period in \hbox^- \hbox^ - \hbox^ Diodes von Baburske, R., Heinze, B., Lutz, J., Niedernostheide, F.-J.

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On the formation of stationary destructive cathode-side filaments in p+-n−-n+ diodes von Baburske, R., Heinze, B., Niedernostheide, F.-J., Lutz, J., Silber, D.

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Limits of strongly punch-through designed IGBTs von Raker, T., Felsl, H., Niedernostheide, F., Pfirsch, F., Schulze, H.

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Fabrication of Medium Power Insulated Gate Bipolar Transistors Using 300mm Magnetic Czochralski Silicon Wafers von Schulze, Hans-Joachim, Öfner, Helmut, Franz-Josef Niedernostheide, Lükermann, Florian, Schulz, Andreas

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Nonlinear Dynamics and Pattern Formation in Semiconductors and Devices: Proceedings of a Symposium Organized Along with the International Conference on Nonlinear Dynamics and Patte... von Niedernostheide, Franz-Josef

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Limiting Factors of the Safe Operating Area for Power Devices : ADVANCED MODELING OF POWER DEVICES AND THEIR APPLICATIONS von SCHULZE, Hans-Joachim, NIEDERNOSTHEIDE, Franz-Josef, PFIRSCH, Frank, BABURSKE, Roman

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Switching ruggedness and surge-current capability of diodes using the self-adjusting p emitter efficiency diode concept: Power Semiconductor Devices and Integrates Circuits von BASLER, Thomas, PFAFFENLEHNER, Manfred, FELSL, Hans Peter, NIEDERNOSTHEIDE, Franz-Josef, PFIRSCH, Frank, SCHULZE, Hans-Joachim, BABURSKE, Roman, LUTZ, Josef

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