Mechanism of negative-bias-temperature instability von BLAT, C. E, NICOLLIAN, E. H, POINDEXTER, E. H

Volltext

Generalized guide for MOSFET miniaturization von Brews, J.R., Fichtner, W., Nicollian, E.H., Sze, S.M.

Volltext

Depassivation of damp-oxide Pb centers by thermal and electric field stress von GERARDI, G. J, PONDEXTER, E. H, HARMATZ, M, WARREN, W. L, NICOLLIAN, E. H, EDWARDS, A. H

Volltext

Low-temperature annealing of As-implanted Ge von HATTANGADY, S. V, FOUNTAIN, G. G, NICOLLIAN, E. H, MARKUNAS, R. J

Volltext

Electrical properties of a silicon quantum dot diode von NICOLLIAN, E. H, TSU, R

Volltext

Improved MOS capacitor measurements using the Q-C method von Brews, J.R., Nicollian, E.H.

Volltext

The profile of electrically active phosphorus in silicon after thermal oxidation von NICOLLIAN, E. H, AJAY CHATTERJEE

Volltext

Instrumentation and analog implementation of the Q- C method for MOS measurements von Nicollian, E.H., Brews, J.R.

Volltext

Chemical etching of Ge for differential hall measurements von HATTANGADY, S. V, NICOLLIAN, E. H, MARKUNAS, R. J

Volltext

Lateral AC current flow model for metal-insulator-semiconductor capacitors von Nicollian, E.H., Goetzberger, A.

Volltext

AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SiO2 von Nicollian, E. H., Goetzberger, A., Berglund, C. N.

Volltext

Silicon Impurity Distribution as Revealed by Pulsed MOS C-V Measurements von Gelder, W. van, Nicollian, E. H.

Volltext

A new model for the thermal oxidation kinetics of silicon von NICOLLIAN, E. H, REISMAN, A

Volltext

Digital implementation of the Q-C method for MOS measurements von Boulin, D.M., Brews, J.R., Nicollian, E.H.

Volltext

SURFACE STATES IN SILICON FROM CHARGES IN THE OXIDE COATING von Goetzberger, A., Heine, V., Nicollian, E. H.

Volltext

MOS STUDY OF INTERFACE-STATE TIME CONSTANT DISPERSION von Nicollian, E. H., Goetzberger, A.

Volltext

Passivation of defects in polycrystalline superlattices and quantum well structures von TSU, R, NICOLLIAN, E. H, REISMAN, A

Volltext

Accurate measurement of trivalent silicon interface trap density using small signal steady-state methods von MILLER, J. A, BLAT, C, NICOLLIAN, E. H

Volltext

Electrochemical Charging of Thermal SiO2 Films by Injected Electron Currents von Nicollian, E. H., Berglund, C. N., Schmidt, P. F., Andrews, J. M.

Volltext

The modelling of silicon oxidation from 1×10-5 to 20 atmospheres von REISMAN, A, NICOLLIAN, E. H, WILLIAMS, C. K, MERZ, C. J

Volltext