A Zn(II) ion selective fluorescence sensor that is not affected by Cd(II) von Ngwendson, Julius N., Banerjee, Anamitro

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6.5 kV Si/SiC Hybrid Power Module Technology von Wang, Y., Mumby-Croft, P., Coulbeck, L., Kong, C., Jiang, H., Ngwendson, L., Birkett, M., Deviny, I., Packwood, M., Sharma, Yogesh

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Turn-Off Behavior of 1.2 kV/25 A NPT-CIGBT Under Clamped Inductive Load Switching von Soon Tat Kong, Ngwendson, L.-K., Sweet, M., Kumar, D., Narayanan, E.M.S.

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Performance Evaluation of 10-kV SiC Trench Clustered IGBT von Menon, K. G., Nakajima, A., Ngwendson, L., Narayanan, E. M. Sankara

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A Convenient Synthesis of Symmetric 1,2-Diarylethenes from Arylmethyl Phosphonium Salts von Ngwendson, Julius N, Atemnkeng, Walters N, Schultze, Cassandra M, Banerjee, Anamitro

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Design of a zinc(II) ion specific fluorescence sensor von Ngwendson, Julius N., Amiot, Carrie L., Srivastava, D.K., Banerjee, Anamitro

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Eurycomaoside: A New Quassinoid-Type Glycoside from the Roots of Eurycoma longifolia von Bedir, Erdal, Abou-Gazar, Hassan, Ngwendson, Julius Ngunde, Khan, Ikhlas Ahmad

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Ultra high performance of 12kV Clustered Insulated Gate Bipolar Transistor (CIGBT) in 4H-SiC von Sankara Narayanan, Ekkanath Madathil, Bruce, Graham P., Menon, Kalyani G., Ngwendson, Luther King, Nakajima, Akira

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Effect of base on alkyltriphenylphosphonium salts in polar aprotic solvents von Ngwendson, Julius N, Schultze, Cassandra M, Bollinger, Jordan W, Banerjee, Anamitro

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Current Distribution Analysis of Insulated Gate Bipolar Transistor Cells von Long, Hongyao, Sweet, Mark R, Ngwendson, Luther-King, Sankara Narayanan, E. M

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Clustered Insulated Gate Bipolar Transistor in the Super Junction Concept: The SJ-TCIGBT von Luther-King, N., Sweet, M., Narayanan, E. M. S.

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SEMICONDUCTOR DEVICE von Ngwendson, Luther-King

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Numerical Evaluation of the Short-Circuit Performance of 3.3-kV CIGBT in Field-Stop Technology von Hong Yao Long, Luther-King, N., Sweet, M. R., Narayanan, E. M. S.

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Constituents of Peucedanum zenkeri seeds and their antimicrobial effects von Ngunde Ngwendson, J., Ngunde Ngwendson, J., Bedir, E., Efange, S. M. N., Okunji, C. O., Okunji, C. O., Iwu, M. M., Iwu, M. M., Schuster, B. G., Khan, I. A., Khan, I. A.

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SEMICONDUCTOR DEVICE von NGWENDSON, Luther-King

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Synthesis, characterization, and applications of fluorous resorcin[4]arenes von Chu, Qianli, O'Neal, Kristi, Osipov, Maksim, Ngwendson, Julius N., Geib, Steven J., Weber, Stephen G., Curran, Dennis P.

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SEMICONDUCTOR DEVICE von NGWENDSON, Luther-King

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IGBT DEVICE von Ngwendson, Luther-King, Deviny, Ian

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Synthesis, characterization, and applications of fluorous resorcin[4]arenesElectronic supplementary information (ESI) available: Experimental procedures and 1H, 13C and 19F NMR spe... von Chu, Qianli, O'Neal, Kristi, Osipov, Maksim, Ngwendson, Julius N, Geib, Steven J, Weber, Stephen G, Curran, Dennis P

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Comparison of Trench Gate IGBT and CIGBT Devices for Increasing the Power Density From High Power Modules von Luther-King, N., Narayanan, E.M.S., Coulbeck, L., Crane, A., Dudley, R.

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