A 3-Phase AC-AC Matrix Converter GaN Chipset With Drive-by-Microwave Technology von Nagai, Shuichi, Yamada, Yasuhiro, Negoro, Noboru, Handa, Hiroyuki, Hiraiwa, Miori, Otsuka, Nobuyuki, Ueda, Daisuke

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Al2O3 INSULATED-GATE STRUCTURE FOR AlGaN/GaN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS HAVING THIN AlGaN BARRIER LAYERS von Hashizume, T, Anantathanasarn, S, Negoro, N, Sano, E, Hasegawa, H, Kumakura, K

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K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10W von NEGORO, Noboru, KURODA, Masayuki, MURATA, Tomohiro, NISHIJIMA, Masaaki, ANDA, Yoshiharu, SAKAI, Hiroyuki, UEDA, Tetsuzo, TANAKA, Tsuyoshi

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A 26 GHz Transceiver Chipset for Short Range Radar Using Post-Passivation Interconnection von Ujita, Shinji, Kawai, Yasufumi, Kaibara, Kazuhiro, Negoro, Noboru, Fukuda, Takeshi, Sakai, Hiroyuki, Ueda, Tetsuzo, Tanaka, Tsuyoshi

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Improved hysteresis in a normally-off AlGaN/GaN MOS heterojunction field-effect transistor with a recessed gate structure formed by selective regrowth von Nakazawa, Satoshi, Shiozaki, Nanako, Negoro, Noboru, Tsurumi, Naohiro, Anda, Yoshiharu, Ishida, Masahiro, Ueda, Tetsuzo

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Conductance gap anomaly in scanning tunneling spectra of MBE-Grown (0 0 1) surfaces of III–V compound semiconductors von Kasai, Seiya, Negoro, Noboru, Hasegawa, Hideki

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Scanned-probe topological and spectroscopic study of surface states on clean and Si-deposited GaAs (0 0 1)-c(4×4) surfaces von Negoro, Noboru, Kasai, Seiya, Hasegawa, Hideki

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Strong Photoluminescence and Low Surface State Densities on Clean and Silicon Deposited (001) Surfaces of GaAs with (4×6) Reconstruction von Nakano, Yuuta, Negoro, Noboru, Hasegawa, Hideki

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K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10W von NEGORO, Noboru, KURODA, Masayuki, MURATA, Tomohiro, NISHIJIMA, Masaaki, ANDA, Yoshiharu, SAKAI, Hiroyuki, UEDA, Tetsuzo, TANAKA, Tsuyoshi

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A DC-isolated gate drive IC with drive-by-microwave technology for power switching devices von Nagai, S., Negoro, N., Fukuda, T., Otsuka, N., Sakai, H., Ueda, T., Tanaka, T., Ueda, D.

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A K-band AlGaN/GaN HFET MMIC Amplifier on Sapphire using novel superlattice cap layer von Nishijima, Masaaki, Murata, Tomohiro, Hirose, Yutaka, Hikita, Masahiro, Negoro, Noboru, Sakai, Hiroyuki, Uemoto, Yasuhiro, Inoue, Kaoru, Tanaka, Tsuyoshi, Ueda, Daisuke

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K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W : Heterostructure Microelectronics with TWHM 2011 von NEGORO, Noboru, KURODA, Masayuki, MURATA, Tomohiro, NISHIJIMA, Masaaki, ANDA, Yoshiharu, SAKAI, Hiroyuki, UEDA, Tetsuzo, TANAKA, Tsuyoshi

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A 26 GHz Transceiver Chipset for Short Range Radar Using Post-Passivation Interconnection von Ujita, Shinji, Kawai, Yasufumi, Kaibara, Kazuhiro, Negoro, Noboru, Fukuda, Takeshi, Sakai, Hiroyuki, Ueda, Tetsuzo, Tanaka, Tsuyoshi

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An Ultra Compact GaN 3x3 Matrix Converter von Nagai, Shuichi, Yamada, Yasuhiro, Kawai, Yasufumi, Negoro, Noboru, Handa, Hiroyuki, Hiraiwa, M, Ueno, H, Kudoh, Yuji, Mizutani, Kenji, Ishida, Masahiro, Ueda, Tetsuzo, Otsuka, Nobuyuki, Ueda, Daisuke

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Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure von Matsuo, Kazushi, Negoro, Noboru, Kotani, Junji, Hashizume, Tamotsu, Hasegawa, Hideki

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30.5 A GaN 3×3 matrix converter chipset with Drive-by-Microwave technologies von Nagai, Shuichi, Yamada, Yasuhiro, Negoro, Noboru, Handa, Hiroyuki, Kudoh, Yuji, Ueno, Hiroaki, Ishida, Masahiro, Otuska, Nobuyuki, Ueda, Daisuke

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A one-chip isolated gate driver with an electromagnetic resonant coupler using a SPDT switch von Nagai, S., Fukuda, T., Otsuka, N., Ueda, D., Negoro, N., Sakai, H., Ueda, T., Tanaka, T.

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Drive-by-Microwave technologies for isolated direct gate drivers von Nagai, S., Negoro, N., Fukuda, T., Sakai, H., Ueda, T., Tanaka, T., Otsuka, N., Ueda, D.

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GATE DRIVE APPARATUS von NEGORO NOBORU

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SEMICONDUCTOR RELAY AND SEMICONDUCTOR RELAY MANUFACTURING METHOD von NEGORO, Noboru, MAEDA, Ryosuke

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