Now is the time of Fast Reactor von Negishi, Hitoshi, Kamide, Hideki, Maeda, Seiichiro, Nakamura, Hirofumi, Abe, Tomoyuki

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Elimination of the kink effect in GaAs metal semiconductor field-effect transistors by utilizing a low-temperature-grown buffer layer von HARUYAMA, J, GOTO, N, NEGISHI, H

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Fast Breeder Reactor : The Past, the Present and the Future―（８）Results from Feasibility Study on Commercialized Fast Reactor Cycle System von NEGISHI, Hitoshi, KOTAKE, Shoji, NIWA, Hajime

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最先端の研究開発 日本原子力研究開発機構: 第4回 今こそ，高速炉の話：持続性あるエネルギー供給へ von 根岸, 仁, 上出, 英樹, 前田, 誠一郎, 中村, 博文, 安部, 智之

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INFORMATION PROCESSING DEVICE, MULTICAST DISTRIBUTION SYSTEM, AND PROGRAM von NEGISHI HITOSHI

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Development of ‘Pad Element’ for detailed core deformation analyses and its verification von Tsukimori, Kazuyuki, Negishi, Hitoshi

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OXYGEN-DISSOLVED WATER SUPPLY SYSTEM TO OBJECT WATER ZONE FOR WATER ENVIRONMENT IMPROVEMENT von NEGISHI HITOSHI, ITO NORIHITO

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Fluctuation in lattice constant near miscibility gap of CdTe-Ga2Te3 system von IWAMURA, Y, YAMAMORI, S, NEGISHI, H, MORIYAMA, M

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Advanced creep-fatigue evaluation rule for fast breeder reactor components: generalization of elastic follow-up model von Kasahara, Naoto, Nagata, Takashi, Iwata, Koji, Negishi, Hitoshi

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Substrate-related kink effects with a strong light-sensitivity in AlGaAs/InGaAs PHEMT von Haruyama, J., Negishi, H., Nishimura, Y., Nashimoto, Y.

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Cathodoluminescence of Ga2(S0.73Te0.27)3 von IWAMURA, Y, NEGISHI, H, MORIYAMA, M

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Deep levels of high resistivity Sb doped CdTe von IWAMURA, Y, YAMAMORI, S, NEGISHI, H, MORIYAMA, M

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An Estimation Method of Stress Relaxation at a Circumferential Notch in Gross Structural Discontinuities von TANIGAWA, Masayuki, NEGISHI, Hitoshi, SHIMOKOSHI, Minoru, KASAHARA, Naoto, NAGATA, Takashi

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Gate pulse frequency-dependent kink effects in GaAs metal-semiconductor field-effect-transistors with a low-temperature-grown buffer layer von Haruyama, Junzi, Negishi, Hitoshi

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Method of forming semiconductor device von HITOSHI NEGISHI

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Fatigue Damage Evaluation Method for the Longitudinal Welded Joint of a FBR Main Vessel in the Vicinity of the Sodium Surface von TANIGAWA, Masayuki, SHIMOKOSHI, Minoru, NEGISHI, Hitoshi, NAGATA, Takashi

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Development of core deformation analysis program by using parallel algorithm von Negishi, Hitoshi, Tsukimori, Kazuyuki, Matsubara, Kiyoshi, Sato, Toshiyuki

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SEMICONDUCTOR DEVICE von NEGISHI HITOSHI

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SEMICONDUCTOR DEVICE von NEGISHI HITOSHI

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Molecular beam epitaxial growth method von NEGISHI, HITOSHI

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