Direct comparison of silicon and silicon carbide power transistors in high-frequency hard-switched applications von Glaser, J S, Nasadoski, J J, Losee, P A, Kashyap, A S, Matocha, K S, Garrett, J L, Stevanovic, L D

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Recent advances in silicon carbide MOSFET power devices von Stevanovic, L.D., Matocha, K.S., Losee, P.A., Glaser, J.S., Nasadoski, J.J., Arthur, S.D.

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Optically powered drive circuit and method for controlling a semiconductor switch von KOSTE GLEN P, STEIGERWALD ROBERT L, NASADOSKI JEFFREY J, SCHUTTEN MICHAEL J

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A 900W, 300V to 50V Dc-dc Power Converter with a 30MHz Switching Frequency von Glaser, J.S., Nasadoski, J., Heinrich, R.

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10 kV, 120 A SiC half H-bridge power MOSFET modules suitable for high frequency, medium voltage applications von Das, M. K., Capell, C., Grider, D. E., Raju, R., Schutten, M., Nasadoski, J., Leslie, S., Ostop, J., Hefner, A.

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DC and Transient Performance of 4H-SiC Double-Implant MOSFETs von Losee, Pete A., Matocha, Kevin, Arthur, Stephen D., Nasadoski, Jeffrey, Stum, Zachary, Garrett, Jerome L., Schutten, Michael, Dunne, Greg, Stevanovic, Ljubisa

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Static and dynamic characterization of 6.5kV, 100A SiC Bipolar PiN Diode modules von Elasser, A., Agamy, M., Nasadoski, J., Bolotnikov, A., Stum, Z., Raju, R., Stevanovic, L., Mari, J., Menzel, M., Bastien, B., Losee, P.

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OPTICAL POWER SUPPLY TYPE DRIVE CIRCUIT AND METHOD FOR CONTROLLING SEMICONDUCTOR SWITCH von STEIGERWALD ROBERT LOUIS, KOSTE GLEN P, NASADOSKI JEFFREY JOSEPH, SCHUTTEN MICHAEL J

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