Inscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelength von Sugimoto, Kozo, Matsuo, Shigeki, Naoi, Yoshiki

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Reduction of parasitic reaction in high-temperature AlN growth by jet stream gas flow metal–organic vapor phase epitaxy von Nagamatsu, Kentaro, Tsuda, Shota, Miyagawa, Takumi, Aono, Reiya, Hirayama, Hideki, Takashima, Yuusuke, Naoi, Yoshiki

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Dynamic wide gamut color generation using highly lossy metal-based metal-dielectric-metal structure von Takashima, Yuusuke, Nagamatsu, Kentaro, Haraguchi, Masanobu, Naoi, Yoshiki

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Investigation of V/III ratio dependencies for optimizing AlN growth during reduced parasitic reaction in metalorganic vapor phase epitaxy von Tomita, Atsushi, Miyagawa, Takumi, Hirayama, Hideki, Takashima, Yuusuke, Naoi, Yoshiki, Nagamatsu, Kentaro

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High growth temperature for AlN by jet stream gas flow metalorganic vapor phase epitaxy von Nagamatsu, Kentaro, Miyagawa, Takumi, Tomita, Atsushi, Hirayama, Hideki, Takashima, Yuusuke, Naoi, Yoshiki

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GaN-Based High-Contrast Grating for Refractive Index Sensor Operating Blue–Violet Wavelength Region von Takashima, Yuusuke, Haraguchi, Masanobu, Naoi, Yoshiki

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Optical detection for magnetic field using Ni-subwavelength grating on SiO2/thin-film Ag/glass structure von Takashima, Yuusuke, Moriiwa, Kohei, Haraguchi, Masanobu, Naoi, Yoshiki

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Highly polarized emission from a GaN-based ultraviolet light-emitting diode using a Si-subwavelength grating on a SiO2 underlayer von Takashima, Yuusuke, Tanabe, Masato, Haraguchi, Masanobu, Naoi, Yoshiki

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Femtosecond laser–assisted thermal annealing of Ni electrode on SiC substrate von Kawakami, Hiroki, Naoi, Yoshiki, Tomita, Takuro

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Thermally stable TiN Schottky contact on AlGaN/GaN heterostructure von Ao, Jin-Ping, Naoi, Yoshiki, Ohno, Yasuo

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Theoretical investigation of polarization control in ultraviolet wavelength region using eigenmode within subwavelength grating von Takashima, Yuusuke, Tanabe, Masato, Haraguchi, Masanobu, Naoi, Yoshiki

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Self-organization of highly ordered honeycomb buckling patterns in crystalline thin films von Choi, Yun Jeong, Naoi, Yoshiki, Tomita, Takuro

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High-sensitivity refractive index sensor with normal incident geometry using a subwavelength grating operating near the ultraviolet wavelength von Takashima, Yuusuke, Haraguchi, Masanobu, Naoi, Yoshiki

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Ultra-thin deep ultraviolet perfect absorber using an Al/TiO 2 /AlN system von Takashima, Yuusuke, Nagamatsu, Kentaro, Haraguchi, Masanobu, Naoi, Yoshiki

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Fabrication of C-Doped p-AlGaInN Light-Emitting Diodes by the Insertion of Al4C3 von Kim, Dohyung, Lee, Heesub, Yamazumi, Kazuya, Naoi, Yoshiki, Sakai, Shiro

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Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN von Sugahara, Tomoya, Sato, Hisao, Hao, Maosheng, Naoi, Yoshiki, Kurai, Satoshi, Tottori, Satoru, Yamashita, Kenji, Nishino, Katsushi, Romano, Linda T., Sakai, Shiro

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Schottky contacts of refractory metal nitrides on gallium nitride using reactive sputtering von Ao, Jin-Ping, Suzuki, Asato, Sawada, Kouichi, Shinkai, Satoko, Naoi, Yoshiki, Ohno, Yasuo

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Broadband Ag/SiO2/Fe/TiO2 ultrathin planar absorber with a wide acceptance angle from visible to near-infrared regions von Takashima, Yuusuke, Furuta, Shunsuke, Nagamatsu, Kentaro, Haraguchi, Masanobu, Naoi, Yoshiki

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Broadband Ag/SiO 2 /Fe/TiO 2 ultrathin planar absorber with a wide acceptance angle from visible to near-infrared regions von Takashima, Yuusuke, Furuta, Shunsuke, Nagamatsu, Kentaro, Haraguchi, Masanobu, Naoi, Yoshiki

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Highly reflective visible color filter based on a double layer TiO 2 subwavelength structure von Takashima, Yuusuke, Haraguchi, Masanobu, Naoi, Yoshiki

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