Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors von Nanjo, Takuma, Takeuchi, Misaichi, Suita, Muneyoshi, Oishi, Toshiyuki, Abe, Yuji, Tokuda, Yasunori, Aoyagi, Yoshinobu

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Leakage current reduction of vertical GaN junction barrier Schottky diodes using dual-anode process von Hayashida, Tetsuro, Nanjo, Takuma, Furukawa, Akihiko, Watahiki, Tatsuro, Yamamuka, Mikio

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Effect of high-temperature annealing for single-Ni-layer gate in AlGaN/GaN high-electron-mobility transistors von Nanjo, Takuma, Imai, Akifumi, Kurahashi, Kenichiro, Matsuda, Takashi, Suita, Muneyoshi, Yagyu, Eiji

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First Operation of AlGaN Channel High Electron Mobility Transistors von Nanjo, Takuma, Takeuchi, Misaichi, Suita, Muneyoshi, Abe, Yuji, Oishi, Toshiyuki, Tokuda, Yasunori, Aoyagi, Yoshinobu

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Vertical GaN merged PiN Schottky diode with a breakdown voltage of 2 kV von Hayashida, Tetsuro, Nanjo, Takuma, Furukawa, Akihiko, Yamamuka, Mikio

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A simulation study of vertical Ga2O3 Schottky barrier diodes using field plate termination von Yuda, Yohei, Ebihara, Kohei, Nanjo, Takuma, Furuhashi, Masayuki, Watahiki, Tatsuro, Nishikawa, Kazuyasu

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A simulation study of vertical Ga 2 O 3 Schottky barrier diodes using field plate termination von Yuda, Yohei, Ebihara, Kohei, Nanjo, Takuma, Furuhashi, Masayuki, Watahiki, Tatsuro, Nishikawa, Kazuyasu

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Highly resistive GaN layers formed by ion implantation of Zn along the c axis von Oishi, Toshiyuki, Miura, Naruhisa, Suita, Muneyoshi, Nanjo, Takuma, Abe, Yuji, Ozeki, Tatsuo, Ishikawa, Hiroyasu, Egawa, Takashi, Jimbo, Takashi

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AlGaN Channel HEMT With Extremely High Breakdown Voltage von Nanjo, T., Imai, A., Suzuki, Y., Abe, Y., Oishi, T., Suita, M., Yagyu, E., Tokuda, Y.

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Design and demonstration of EID MOS-HEMTs on Si substrate with normally depleted AlGaN/GaN epitaxial layer von Nanjo, Takuma, Imazawa, Takashi, Kiyoi, Akira, Hayashida, Tetsuro, Watahiki, Tatsuro, Miura, Naruhisa

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Ion implantation doping for AlGaN/GaN HEMTs von Suita, Muneyoshi, Nanjo, Takuma, Oishi, Toshiyuki, Abe, Yuji, Tokuda, Yasunori

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Investigation of post-annealing effects for normally-off GaN metal-oxide semiconductor heterojunction field-effect transistors with thin AlN barrier layer von Nanjo, Takuma, Koyama, Hidetoshi, Imai, Akifumi, Watahiki, Tatsuro, Yamamuka, Mikio

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Effects of a thin Al layer insertion between AlGaN and Schottky gate on the AlGaN∕GaN high electron mobility transistor characteristics von Nanjo, Takuma, Oishi, Toshiyuki, Suita, Muneyoshi, Abe, Yuji, Tokuda, Yasunori

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Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate von Nanjo, Takuma, Miura, Naruhisa, Oishi, Toshiyuki, Suita, Muneyoshi, Abe, Yuji, Ozeki, Tatsuo, Nakatsuka, Shigenori, Inoue, Akira, Ishikawa, Takahide, Matsuda, Yoshio, Ishikawa, Hiroyasu, Egawa, Takashi

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X-ray Photoelectron Spectroscopy Study of the Origin of the Improved Device Performance by a Thin Al Layer Insertion between AlGaN and Schottky Gate on the AlGaN/GaN High-Electron-... von Nanjo, Takuma, Kawase, Kazumasa, Suita, Muneyoshi, Abe, Yuji, Oishi, Toshiyuki, Tokuda, Yasunori

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Enhancement of Drain Current by an AlN Spacer Layer Insertion in AlGaN/GaN High-Electron-Mobility Transistors with Si-Ion-Implanted Source/Drain Contacts von Nanjo, Takuma, Motoya, Tsukasa, Imai, Akihumi, Suzuki, Yosuke, Shiozawa, Katsuomi, Suita, Muneyoshi, Oishi, Toshiyuki, Abe, Yuji, Yagyu, Eiji, Yoshiara, Kiichi, Tokuda, Yasunori

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Drivability Enhancement for AlGaN/GaN High-Electron Mobility Transistors with AlN Spacer Layer Using Si Ion Implantation Doping von Nanjo, Takuma, Suita, Muneyoshi, Oishi, Toshiyuki, Abe, Yuji, Yagyu, Eiji, Yoshiara, Kiichi, Tokuda, Yasunori

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Development of Vertical GaN Merged PiN Schottky (MPS) Diode von Hayashida, Tetsuro, Nanjo, Takuma, Furukawa, Akihiko, Yamamuka, Mikio

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Semiconductor device and method of manufacturing the same von Nanjo, Takuma, Imai, Akifumi, Watahiki, Tatsuro

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Effects of a thin Al layer insertion between AlGaN and Schottky gateon the AlGaN ∕ GaN high electron mobility transistor characteristics von Nanjo, Takuma, Oishi, Toshiyuki, Suita, Muneyoshi, Abe, Yuji, Tokuda, Yasunori

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