Size dependence of the characteristics of Si single-electron transistors on SIMOX substrates von Takahashi, Y., Namatsu, H., Kurihara, K., Iwadate, K., Nagase, M., Murase, K.

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Fabrication method for IC-oriented Si single-electron transistors von Ono, Y., Takahashi, Y., Yamazaki, K., Nagase, M., Namatsu, H., Kurihara, K., Murase, K.

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Two-axis-of-rotation drive system in electron-beam lithography apparatus for nanotechnology applications von YAMAZAKI, K, NAMATSU, H

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Two-axis-of-rotation drive system in electron-beam lithography apparatus for nanotechnology applications von Yamazaki, K., Namatsu, H.

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Nano-patterning of a hydrogen silsesquioxane resist with reduced linewidth fluctuations von Namatsu, H., Yamaguchi, T., Nagase, M., Yamazaki, K., Kurihara, K.

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Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor von Fujiwara, Akira, Inokawa, Hiroshi, Yamazaki, Kenji, Namatsu, Hideo, Takahashi, Yasuo, Zimmerman, Neil M., Martin, Stuart B.

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Double-island single-electron devices. A useful unit device for single-electron logic LSI's von Fujiwara, A., Takahashi, Y., Yamazaki, K., Namatsu, H., Nagase, M., Kurihara, K., Murase, K.

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Single-electron devices formed by pattern-dependent oxidation: microscopic structural evaluation von Nagase, M., Horiguchi, S., Fujiwara, A., Ono, Y., Yamazaki, K., Namatsu, H., Takahashi, Y.

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Impact of developers on roughness of dissolution front in electron-beam resists von Yamaguchi, T., Hamatsu, H.

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Fabrication of a silicon quantum wire surrounded by silicon dioxide and its transport properties von Nakajima, Y., Takahashi, Y., Horiguchi, S., Iwadate, K., Namatsu, H., Kurihara, K., Tabe, M.

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Nano-scale fluctuations in electron beam resist pattern evaluated by atomic force microscopy von Nagase, M., Namatsu, H., Kurihara, K., Iwadate, K., Murase, K., Makino, T.

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5-nm-Order Electron-Beam Lithography for Nanodevice Fabrication von Yamazaki, Kenji, Namatsu, Hideo

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Multigate single-electron transistors and their application to an exclusive-OR gate von Takahashi, Yasuo, Fujiwara, Akira, Yamazaki, Kenji, Namatsu, Hideo, Kurihara, Kenji, Murase, Katsumi

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Supercritical drying for nanostructure fabrication without pattern collapse von Namatsu, Hideo, Yamazaki, Kenji, Kurihara, Kenji

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Si complementary single-electron inverter with voltage gain von Ono, Yukinori, Takahashi, Yasuo, Yamazaki, Kenji, Nagase, Masao, Namatsu, Hideo, Kurihara, Kenji, Murase, Katsumi

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Nanometer-scale linewidth fluctuations caused by polymer aggregates in resist films von Yamaguchi, Toru, Namatsu, Hideo, Nagase, Masao, Yamazaki, Kenji, Kurihara, Kenji

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Room temperature operated single electron transistor fabricated by electron beam nanolithography von Kurihara, K., Namatsu, H., Nagase, M., Makino, T.

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Influence of molecular weight of resist polymers on surface roughness and line-edge roughness von Yamaguchi, T., Yamazaki, K., Namatsu, H.

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Supercritical Drying for Nanostructure Fabrication von Namatsu, Hideo

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The Impact of Supercritical Fluoro-Compounds on Lithography Use von Namatsu, Hideo

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