Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides von Kim, Changsik, Moon, Inyong, Lee, Daeyeong, Choi, Min Sup, Ahmed, Faisal, Nam, Seunggeol, Cho, Yeonchoo, Shin, Hyeon-Jin, Park, Seongjun, Yoo, Won Jong

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Parallel synaptic design of ferroelectric tunnel junctions for neuromorphic computing von Moon, Taehwan, Lee, Hyun Jae, Nam, Seunggeol, Bae, Hagyoul, Choe, Duk-Hyun, Jo, Sanghyun, Lee, Yun Seong, Park, Yoonsang, Yang, J Joshua, Heo, Jinseong

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Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors von Cheema, Suraj S., Shanker, Nirmaan, Wang, Li-Chen, Hsu, Cheng-Hsiang, Hsu, Shang-Lin, Liao, Yu-Hung, San Jose, Matthew, Gomez, Jorge, Chakraborty, Wriddhi, Li, Wenshen, Bae, Jong-Ho, Volkman, Steve K., Kwon, Daewoong, Rho, Yoonsoo, Pinelli, Gianni, Rastogi, Ravi, Pipitone, Dominick, Stull, Corey, Cook, Matthew, Tyrrell, Brian, Stoica, Vladimir A., Zhang, Zhan, Freeland, John W., Tassone, Christopher J., Mehta, Apurva, Saheli, Ghazal, Thompson, David, Suh, Dong Ik, Koo, Won-Tae, Nam, Kab-Jin, Jung, Dong Jin, Song, Woo-Bin, Lin, Chung-Hsun, Nam, Seunggeol, Heo, Jinseong, Parihar, Narendra, Grigoropoulos, Costas P., Shafer, Padraic, Fay, Patrick, Ramesh, Ramamoorthy, Mahapatra, Souvik, Ciston, Jim, Datta, Suman, Mohamed, Mohamed, Hu, Chenming, Salahuddin, Sayeef

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Laminated Ferroelectric FET With Large Memory Window and High Reliability von Lee, Hyun Jae, Nam, Seunggeol, Lee, Yunseong, Kim, Kihong, Choe, Duk-Hyun, Yoo, Sijung, Park, Yoonsang, Jo, Sanghyun, Kim, Donghoon, Heo, Jinseong

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Interfacial Layer Selection Methodology for Customized Ferroelectric Memories von Lee, Hyun Jae, Moon, Taehwan, Nam, Seunggeol, Bae, Hagyoul, Choe, Duk-Hyun, Jo, Sanghyun, Lee, Yunseong, Park, Yoonsang, Kim, Kihong, Heo, Jinseong

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Reconfigurable van der Waals Heterostructured Devices with Metal–Insulator Transition von Heo, Jinseong, Jeong, Heejeong, Cho, Yeonchoo, Lee, Jaeho, Lee, Kiyoung, Nam, Seunggeol, Lee, Eun-Kyu, Lee, Sangyeob, Lee, Hyangsook, Hwang, Sungwoo, Park, Seongjun

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Two-Dimensional Materials Inserted at the Metal/Semiconductor Interface: Attractive Candidates for Semiconductor Device Contacts von Lee, Min-Hyun, Cho, Yeonchoo, Byun, Kyung-Eun, Shin, Keun Wook, Nam, Seong-Geol, Kim, Changhyun, Kim, Haeryong, Han, Sang-A, Kim, Sang-Woo, Shin, Hyeon-Jin, Park, Seongjun

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Negative differential capacitance in ultrathin ferroelectric hafnia von Jo, Sanghyun, Lee, Hyangsook, Choe, Duk-Hyun, Kim, Jung-Hwa, Lee, Yun Seong, Kwon, Owoong, Nam, Seunggeol, Park, Yoonsang, Kim, Kihong, Chae, Byeong Gyu, Kim, Sangwook, Kang, Seunghun, Moon, Taehwan, Bae, Hagyoul, Won, Jung Yeon, Yun, Dong-Jin, Jeong, Myoungho, Lee, Hyun Hwi, Cho, Yeonchoo, Lee, Kwang-Hee, Lee, Hyun Jae, Lee, Sangjun, Nam, Kab-Jin, Jung, Dongjin, Kuh, Bong Jin, Ha, Daewon, Kim, Yongsung, Park, Seongjun, Kim, Yunseok, Lee, Eunha, Heo, Jinseong

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Ultrathin ferroic HfO 2 -ZrO 2 superlattice gate stack for advanced transistors von Cheema, Suraj S, Shanker, Nirmaan, Wang, Li-Chen, Hsu, Cheng-Hsiang, Hsu, Shang-Lin, Liao, Yu-Hung, San Jose, Matthew, Gomez, Jorge, Chakraborty, Wriddhi, Li, Wenshen, Bae, Jong-Ho, Volkman, Steve K, Kwon, Daewoong, Rho, Yoonsoo, Pinelli, Gianni, Rastogi, Ravi, Pipitone, Dominick, Stull, Corey, Cook, Matthew, Tyrrell, Brian, Stoica, Vladimir A, Zhang, Zhan, Freeland, John W, Tassone, Christopher J, Mehta, Apurva, Saheli, Ghazal, Thompson, David, Suh, Dong Ik, Koo, Won-Tae, Nam, Kab-Jin, Jung, Dong Jin, Song, Woo-Bin, Lin, Chung-Hsun, Nam, Seunggeol, Heo, Jinseong, Parihar, Narendra, Grigoropoulos, Costas P, Shafer, Padraic, Fay, Patrick, Ramesh, Ramamoorthy, Mahapatra, Souvik, Ciston, Jim, Datta, Suman, Mohamed, Mohamed, Hu, Chenming, Salahuddin, Sayeef

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VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRINGS von LEE, Changseok, LEE, Minhyun, NAM, Seunggeol

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FERROELECTRIC MEMORY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME von HEO, Jinseong, BAE, Hagyoul, NAM, Seunggeol

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Hybrid Memory Device And Electronic Device Including Same von Bae, Hagyoul, Nam, Seunggeol, Heo, Jinseong

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Ferroelectric Memory Device And Electronic Device Including The Same von Bae, Hagyoul, NAM, Seunggeol, Heo, Jinseong

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SEMICONDUCTOR ELEMENT AND MULTIPLEXER INCLUDING A PLURALITY OF SEMICONDUCTOR ELEMENTS von HEO, Jinseong, BAE, Hagyoul, NAM, Seunggeol

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Ferroelectric semiconductor device and method of extracting defect density of the same von Choe, Dukhyun, Bae, Hagyoul, Nam, Seunggeol, Jo, Sanghyun, Heo, Jinseong

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Content-addressable memory and electronic device including the same von Choe, Dukhyun, Lee, Hyunjae, Bae, Hagyoul, Nam, Seunggeol, Heo, Jinseong

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Thin film structure and semiconductor device including the same von Nam, Seunggeol, Jo, Sanghyun, Heo, Jinseong, Moon, Taehwan

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NON-VOLATILE CONTENT ADDRESSABLE MEMORY DEVICE HAVING SIMPLE CELL CONFIGURATION AND OPERATING METHOD OF THE SAME von HEO, Jinseong, MOON, Taehwan, BAE, Hagyoul, NAM, Seunggeol

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SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC LAYER von HEO, Jinseong, LEE, Hyunjae, LEE, Yunseong, CHOE, Dukhyun, NAM, Seunggeol

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Semiconductor device including metal-2 dimensional material-semiconductor contact von Lee, Minhyun, Nam, Seunggeol, Kim, Haeryong, Park, Seongjun, Shin, Hyeonjin

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