Re: Minimal invasive treatment using patient-specific template for mandibular fractures in children: “Wing- splint” by CAD/CAM technology von Lee, J.-W, Choi, B.-J, Nam, O.-H, Kwon, Y.-D

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Effects of Mg dopant on the degradation of InGaN multiple quantum wells in AlInGaN-based light emitting devices von Lee, Sung-Nam, Paek, H. S., Son, J. K., Kim, H., Kim, K. K., Ha, K. H., Nam, O. H., Park, Y.

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Characteristics of Si and Mg doping in a-plane GaN grown on r-plane sapphire von Lee, Sung-Nam, Paek, H.S., Son, J.K., Sakong, T., Nam, O.H., Park, Y.

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First-principles molecular dynamics modeling of the molten fluoride salt with Cr solute von Nam, H.O., Bengtson, A., Vörtler, K., Saha, S., Sakidja, R., Morgan, D.

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Behaviors of Emission Wavelength Shift in AlInGaN-Based Green Laser Diodes von Sung-Nam Lee, Ryu, H.Y., Paek, H.S., Son, J.K., Sung, Y.J., Kim, K.S., Kim, H.K., Kim, H., Jang, T., Ha, K.H., Nam, O.H., Park, Y.

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Structural and optical characterization of (11-22) semipolar GaN on m -plane sapphire without low temperature buffer layer von Lee, Sung-Nam, Kim, K. K., Nam, O. H., Kim, J. H., Kim, H.

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High-Performance Blue InGaN Laser Diodes With Single-Quantum-Well Active Layers von Ryu, H.Y., Nam, O. H., Park, Y. J., Shim, J. I., Ha, K.H., Lee, S.N., Jang, T., Son, J. K., Paek, H. S., Sung, Y. J., Kim, H. K., Kim, K. S.

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Low resistance and reflective Mg-doped indium oxide-Ag ohmic contacts for flip-chip light-emitting diodes von Song, J.-O., Dong-Seok Leem, Kwak, J.S., Nam, O.H., Park, Y., Tae-Yeon Seong

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Characteristics of GaN-based laser diodes for post-DVD applications von Nam, O. H., Ha, K. H., Kwak, J. S., Lee, S. N., Choi, K. K., Chang, T. H., Chae, S. H., Lee, W. S., Sung, Y. J., Paek, H. S., Chae, J. H., Sakong, T., Son, J. K., Ryu, H. Y., Kim, Y. H., Park, Y.

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Comparison of Consumer and Research Monitors under Semistructured Settings von BAI, YANG, WELK, GREGORY J, NAM, YOON HO, LEE, JOEY A, LEE, JUNG-MIN, KIM, YOUNGWON, MEIER, NATHAN F, DIXON, PHILIP M

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Low-resistance and highly-reflective Zn–Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes von Song, June-O, Leem, Dong-Seok, Kwak, J. S., Nam, O. H., Park, Y., Seong, Tae-Yeon

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Prevalence of Electrocardiographic Findings Suggestive of Sudden Cardiac Death Risk in 10,867 Apparently Healthy Young Korean Men von UHM, JAE-SUN, HWANG, IL-UNG, OH, YONG-SEOG, CHOI, MIN-SEOK, JANG, SUNG-WON, SHIN, WOO-SEUNG, KIM, JI-HOON, LEE, MAN-YOUNG, RHO, TAI-HO, KIM, YOU-HO, SUNG, JUNG-HOON, LEE, YOUNG-SOO, CHO, JEONG-GWAN, OH, DONG-JIN, KIM, DAE-KYEONG, NAMGUNG, JUNE, PARK, KYOUNG-MIN, KIM, YONG-HOON, KIM, YOON-NYUN, LIM, HONG-EUY, CHA, TAE-JOON, ON, YOUNG-KEUN, SHIN, DONG-GU, PAK, HUI-NAM, KIM, NAM-HO

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Crystal-polarity dependence of Ti/Al contacts to freestanding n-GaN substrate von Kwak, Joon Seop, Lee, K. Y., Han, J. Y., Cho, J., Chae, S., Nam, O. H., Park, Y.

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Customized surgical guide with a bite block and retraction arm for a deeply impacted odontoma; a technical note von Lee, H., Choi, S., Chae, Y.K., Jung, J., Choi, S.C., Nam, O.H.

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Single-mode blue-violet laser diodes with low beam divergence and high COD level von Ryu, H.Y., Ha, K.H., Lee, S.N., Choi, K.K., Jang, T., Son, J.K., Chae, J.H., Chae, S.H., Paek, H.S., Sung, Y.J., Sakong, T., Kim, H.G., Kim, K.S., Kim, Y.H., Nam, O.H., Park, Y.J.

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Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy von Ward, B. L., Nam, O.-H., Hartman, J. D., English, S. L., McCarson, B. L., Schlesser, R., Sitar, Z., Davis, R. F., Nemanich, R. J.

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Micro-crack-free high power blue-violet GaN-based laser diodes grown on maskless epitaxial lateral overgrown GaN/sapphire von Lee, Sung-Nam, Paek, H.S., Ryu, H.Y., Son, J.K., Sakong, T., Jang, T., Choi, K.K., Sung, Y.J., Kim, Y.H., Kim, H.K., Chae, S.H., Ha, K.H., Chae, J.H., Kim, K.S., Kwak, J.S., Nam, O.H., Park, Y.

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Carrier transport by formation of two-dimensional hole gas in p-type Al0.1Ga0.9N/GaN superlattice for AlGaInN-based laser diode von LEE, Sung-Nam, JANG, T, SON, J. K, PAEK, H. S, SAKONG, T, YOON, E, NAM, O. H, PARK, Y

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Characteristics of long wavelength InGaN quantum well laser diodes von Kim, K. S., Son, J. K., Lee, S. N., Sung, Y. J., Paek, H. S., Kim, H. K., Kim, M. Y., Ha, K. H., Ryu, H. Y., Nam, O. H., Jang, T., Park, Y. J.

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High-quality nonalloyed rhodium-based ohmic contacts to p-type GaN von Song, June O, Leem, Dong-Seok, Kwak, Joon Seop, Nam, O. H., Park, Y., Seong, Tae-Yeon

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