Mismatch-Shaping Switching Scheme for Split-Array Capacitive DACs von Nam, Jae-Hyeon, Park, Sung-Hyun, Jang, Jin-Yeop, Park, Sang-Gyu

Volltext

Effect of groove surface on friction noise and its mechanism von Nam, Jae-Hyeon, Do, Hyun-Cheol, Kang, Jae-Young

Volltext

One-step H2S reactive sputtering for 2D MoS2/Si heterojunction photodetector von Jang, Hye Yeon, Nam, Jae Hyeon, Yoon, Jongwon, Kim, Yonghun, Park, Woojin, Cho, Byungjin

Volltext

Artificial 2D van der Waals Synapse Devices via Interfacial Engineering for Neuromorphic Systems von Park, Woojin, Jang, Hye Yeon, Nam, Jae Hyeon, Kwon, Jung-Dae, Cho, Byungjin, Kim, Yonghun

Volltext

Improvement of the Bias Stress Stability in 2D MoS2 and WS2 Transistors with a TiO2 Interfacial Layer von Park, Woojin, Pak, Yusin, Jang, Hye Yeon, Nam, Jae Hyeon, Kim, Tae Hyeon, Oh, Seyoung, Choi, Sung Mook, Kim, Yonghun, Cho, Byungjin

Volltext

Low Power MoS2/Nb2O5 Memtransistor Device with Highly Reliable Heterosynaptic Plasticity von Nam, Jae Hyeon, Oh, Seyoung, Jang, Hye Yeon, Kwon, Ojun, Park, Heejeong, Park, Woojin, Kwon, Jung‐Dae, Kim, Yonghun, Cho, Byungjin

Volltext

Highly Reproducible Heterosynaptic Plasticity Enabled by MoS2/ZrO2–x Heterostructure Memtransistor von Jang, Hye Yeon, Kwon, Ojun, Nam, Jae Hyeon, Kwon, Jung-Dae, Kim, Yonghun, Park, Woojin, Cho, Byungjin

Volltext

Room-temperature sputtered electrocatalyst WSe2 nanomaterials for hydrogen evolution reaction von Nam, Jae Hyeon, Jang, Myeong Je, Jang, Hye Yeon, Park, Woojin, Wang, Xiaolei, Choi, Sung Mook, Cho, Byungjin

Volltext

Highly Reproducible Heterosynaptic Plasticity Enabled by MoS 2 /ZrO 2– x Heterostructure Memtransistor von Jang, Hye Yeon, Kwon, Ojun, Nam, Jae Hyeon, Kwon, Jung-Dae, Kim, Yonghun, Park, Woojin, Cho, Byungjin

Volltext

One-step H 2 S reactive sputtering for 2D MoS 2 /Si heterojunction photodetector von Jang, Hye Yeon, Nam, Jae Hyeon, Yoon, Jongwon, Kim, Yonghun, Park, Woojin, Cho, Byungjin

Volltext

Low Power MoS 2 /Nb 2 O 5 Memtransistor Device with Highly Reliable Heterosynaptic Plasticity (Adv. Funct. Mater. 40/2021) von Nam, Jae Hyeon, Oh, Seyoung, Jang, Hye Yeon, Kwon, Ojun, Park, Heejeong, Park, Woojin, Kwon, Jung‐Dae, Kim, Yonghun, Cho, Byungjin

Volltext

Low Power MoS2/Nb2O5 Memtransistor Device with Highly Reliable Heterosynaptic Plasticity (Adv. Funct. Mater. 40/2021) von Nam, Jae Hyeon, Oh, Seyoung, Jang, Hye Yeon, Kwon, Ojun, Park, Heejeong, Park, Woojin, Kwon, Jung‐Dae, Kim, Yonghun, Cho, Byungjin

Volltext

Low Power MoS 2 /Nb 2 O 5 Memtransistor Device with Highly Reliable Heterosynaptic Plasticity von Nam, Jae Hyeon, Oh, Seyoung, Jang, Hye Yeon, Kwon, Ojun, Park, Heejeong, Park, Woojin, Kwon, Jung‐Dae, Kim, Yonghun, Cho, Byungjin

Volltext

Facile fabrication of ZnO nanowire memory device based on chemically-treated surface defects von Park, Woojin, Kim, Tae Hyeon, Nam, Jae Hyeon, Jang, Hye Yeon, Pak, Yusin, Min, Jung-Wook, Yun, Joho, Cho, Byungjin

Volltext

Unveiling the Role of Al 2 O 3 Interlayer in Indium–Gallium–Zinc–Oxide Transistors von Kim, Tae Hyeon, Park, Woojin, Oh, Seyoung, Kim, So-Young, Yamada, Naohito, Kobayashi, Hikaru, Jang, Hye Yeon, Nam, Jae Hyeon, Habazaki, Hiroki, Lee, Byoung Hun, Cho, Byungjin

Volltext

Unveiling the Role of Al2O3 Interlayer in Indium–Gallium–Zinc–Oxide Transistors von Kim, Tae Hyeon, Park, Woojin, Oh, Seyoung, Kim, So-Young, Yamada, Naohito, Kobayashi, Hikaru, Jang, Hye Yeon, Nam, Jae Hyeon, Habazaki, Hiroki, Lee, Byoung Hun, Cho, Byungjin

Volltext

Facile Fabrication of a Two-Dimensional TMD/Si Heterojunction Photodiode by Atmospheric-Pressure Plasma-Enhanced Chemical Vapor Deposition von Kim, Yonghun, Kwon, Soyeong, Seo, Eun-Joo, Nam, Jae Hyeon, Jang, Hye Yeon, Kwon, Se-Hun, Kwon, Jung-Dae, Kim, Dong-Wook, Cho, Byungjin

Volltext

Al2O3‑Induced Sub-Gap Doping on the IGZO Channel for the Detection of Infrared Light von Kim, Jaeun, Kim, Tae Hyeon, Oh, Seyoung, Nam, Jae Hyeon, Jang, Hye Yeon, Kim, Yonghun, Yamada, Naohito, Kobayashi, Hikaru, Kim, So-Young, Lee, Byoung Hun, Habazaki, Hiroki, Park, Woojin, Cho, Byungjin

Volltext

Improvement of the Bias Stress Stability in 2D MoS 2 and WS 2 Transistors with a TiO 2 Interfacial Layer von Park, Woojin, Pak, Yusin, Jang, Hye Yeon, Nam, Jae Hyeon, Kim, Tae Hyeon, Oh, Seyoung, Choi, Sung Mook, Kim, Yonghun, Cho, Byungjin

Volltext

Al 2 O 3 -Induced Sub-Gap Doping on the IGZO Channel for the Detection of Infrared Light von Kim, Jaeun, Kim, Tae Hyeon, Oh, Seyoung, Nam, Jae Hyeon, Jang, Hye Yeon, Kim, Yonghun, Yamada, Naohito, Kobayashi, Hikaru, Kim, So-Young, Lee, Byoung Hun, Habazaki, Hiroki, Park, Woojin, Cho, Byungjin

Volltext