High- and low-frequency steady-state MIS photovoltage von NAKHMANSON, R. S.

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Tunnel-fluctuation model of the MIS admittance von Bormontov, E.N., Lukin, S.V., Nakhmanson, R.S.

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Investigations of metal-insulator-semiconductor structure inhomogeneities using a small-size mercury probe von Nakhmanson, R.S., Sevastianov, S.B.

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On the theory of MIS capacitance von Nakhmanson, R.S.

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Measurements of small-signal photo-EMF of Si and Ge MIS structures using scanning light probe von Nakhmanson, R. S., Popov, L. K.

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Charge fluctuations in SiO2-Si interface von NAKHMANSON, R. S, SEVASTIANOV, S. B

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The conduction channels on MIS and MIM structure splits von Nakhmanson, R.S., Roizin, Ya.O.

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Complex models of surface state admittance von NAKHMANSON, R. S., SEVASTIANOV, S. B.

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A technique for directly plotting the doping profile of semiconductor wafers (“8-shaped way”) von Nakhmanson, R.S.

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On the frequency dependence of the surface state admittance von Nakhmanson, R. S., Sevastianov, S. B.

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Anomalous recombination in silicon MIS structures von Nakhmanson, R. S., Dobrovlski, P. P., Amineva, S. S.

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Frequency dependence of the photo-EMF of strongly inverted Ge and Si MIS structures—I. Theory von Nakhmanson, R.S.

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Obtaining interface state parameters by the MOS admittance technique accounting for fluctuation and tunnel effects von Bormontov, Eugeny N., Levin, Mark N., Nakhmanson, Roman S.

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High- and low-frequency steady-state MIS capacitance von Nakhmanson, R. S.

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Physical interpretation of quantum mechanics von Nakhmanson, Raoul S.

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Charge fluctuations in SiO-2 Si interface von NAKHMANSON, R. S., SEVASTIANOV, S. B.

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Charge fluctuations in SiO sub(2)-Si interface von Nakhmanson, R S, Sevastianov, S B

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Investigations of mis structure inhomogeneities using a scanning mercury probe von Nakhmanson, R. S., Dobrovolskii, P. P.

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Frequency dependence of photo-EMF of strongly inverted Ge and Si MIS structures—II experiments von Nakhmanson, R.S., Ovsyuk, Z.Sh, Popov, L.K.

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Measurements on MIS structures at infrasonic frequencies von Nakhmanson, R. S., Erkov, V. G.

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