Fabrication of Ge-channel MOSFETs by using replacement gate process and selective epitaxial growth von Terashima, Koichi, Tanabe, Akihito, Nakagawa, Takashi, Mori, Kaoru, Ikarashi, Taeko, Nakatsuru, Junko, Date, Hiroki, Ikemoto, Manabu, Tatsumi, Toru

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300mm Cold-Wall UHV/CVD Reactor for Low-Temperature Epitaxial (100) Silicon von Adam, Thomas N., Bedell, Stephen, Reznicek, Alexander, Sadana, Devendra K., Venkateshan, Aarthi, Tsunoda, Takaaki, Seino, Takuya, Nakatsuru, Junko, Shinde, Sanjay

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Low-Temperature Epitaxial Si, SiGe, and SiC in a 300mm UHV/CVD Reactor von Adam, Thomas N., Bedell, Stephen, Reznicek, Alexander, Sadana, Devendra K., Murphy, Richard J., Venkateshan, Aarthi, Tsunoda, Takaaki, Seino, Takuya, Nakatsuru, Junko, Shinde, Sanjay

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Ge Selective Epitaxial Growth with Ultra Thin SiGe Buffer Layer von Nakatsuru, Junko, Date, Hiroki, Mashiro, Supika, Ikemoto, Manabu

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Method for reducing agglomeration of Si layer, method for manufacturing semiconductor device and vacuum treatment apparatus von DATE HIROKI, NAKATSURU JUNKO

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Method for reducing agglomeration of Si layer, method for manufacturing semiconductor device and vacuum treatment apparatus von Nakatsuru, Junko, Date, Hiroki

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VACUUM PROCESSING DEVICE von DATE DAIKI, NAKATSURU JUNKO

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METHOD FOR REDUCING AGGLOMERATION OF Si LAYER, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND VACUUM TREATMENT APPARATUS von DATE HIROKI, NAKATSURU JUNKO

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Low-Temperature Epitaxial Si, SiGe, and SiC in a 300mm UHV/CVD Reactor von Adam, Thomas N., Bedell, Stephen, Reznicek, Alexander, Sadana, Devendra K., Venkateshan, Aarthi, Tsunoda, Takaaki, Seino, Takuya, Nakatsuru, Junko, Shinde, Sanjay

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300mm Cold-Wall UHV/CVD Reactor for Low-Temperature Epitaxial (100) Silicon von Adam, Thomas N., Bedell, Stephen, Reznicek, Alexander, Sadana, Devendra K., Venkateshan, Aarthi, Tsunoda, Takaaki, Seino, Takuya, Nakatsuru, Junko, Shinde, Sanjay

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Ge Selective Epitaxial Growth with Ultra Thin SiGe Buffer Layer von Nakatsuru, Junko, Date, Hiroki, Mashiro, Supika, Ikemoto, Manabu

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SEMICONDUCTOR STRUCTURE AND ITS GROWING METHOD von DATE DAIKI, NAKATSURU JUNKO, IKEMOTO MANABU

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Si LAYER AGGREGATION SUPPRESSION METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND VACUUM PROCESSING DEVICE von DATE, HIROKI, NAKATSURU, JUNKO

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Metallothionein deficiency enhances skin carcinogenesis induced by 7,12-dimethylbenz[a]anthracene and 12-O-tetradecanoylphorbol-13-acetate in metallothionein-null mice von Suzuki, Junko S., Nishimura, Noriko, Zhang, Baoxu, Nakatsuru, Yoko, Kobayashi, Shizuko, Satoh, Masahiko, Tohyama, Chiharu

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Effect of mercurials on lymphocyte functions in vitro von NAKATSURU, S, OOHASHI, J, NOZAKI, H, NAKADA, S, IMURA, N

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