Interface defect engineering for high-performance MOSFETs with novel carrier mobility model: Theory and experimental verification von Ishihara, Takamitsu, Nakasaki, Yasushi, Matsushita, Daisuke, Tatsumura, Kosuke, Kato, Koichi

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Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface von Higashi, Yusuke, Takaishi, Riichiro, Kato, Koichi, Suzuki, Masamichi, Nakasaki, Yasushi, Tomita, Mitsuhiro, Mitani, Yuichiro, Matsumoto, Masuaki, Ogura, Shohei, Fukutani, Katsuyuki, Yamabe, Kikuo

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Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing von Hirano, Izumi, Nakasaki, Yasushi, Fukatsu, Shigeto, Goto, Masakazu, Nagatomo, Koji, Inumiya, Seiji, Sekine, Katsuyuki, Mitani, Yuichiro, Yamabe, Kikuo

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Atomic-scale theory on current-assisted thermochemical degradation mode and its field acceleration via charge trapping of O vacancy in HfSiO4 von NAKASAKI, Yasushi, HIRANO, Izumi, KATO, Koichi, MITANI, Yuichiro

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Density-functional study on the dopant-segregation mechanism: Chemical potential dependence of dopant-defect complex at Si/SiO2 interface von Kawai, Hiroki, Nakasaki, Yasushi, Kanemura, Takahisa, Ishihara, Takamitsu

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Effects of Electron Current and Hole Current on Dielectric Breakdown in HfSiON Gate Stacks von Hirano, Izumi, Yamaguchi, Takeshi, Nakasaki, Yasushi, Iijima, Ryosuke, Sekine, Katsuyuki, Takayanagi, Mariko, Eguchi, Kazuhiro, Mitani, Yuichiro

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Effects of Electron Current and Hole Current on Dielectric Breakdown in HfSiON Gate Stacks von Hirano, Izumi, Yamaguchi, Takeshi, Nakasaki, Yasushi, Iijima, Ryosuke, Sekine, Katsuyuki, Takayanagi, Mariko, Eguchi, Kazuhiro, Mitani, Yuichiro

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Structural Studies of High-Performance Low-k Dielectric Materials Improved by Electron-Beam Curing von Yoda, Takashi, Nakasaki, Yasushi, Hashimoto, Hideki, Fujita, Keiji, Miyajima, Hideshi, Shimada, Miyoko, Nakata, Rempei, Kaji, Naruhiko, Hayasaka, Nobuo

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Performance and Reliability Improvement of HfSiON Field-Effect Transistor with Low Hafnium Concentration Cap Layer Formed by Metal Organic Chemical Vapor Deposition with Diethylsil... von Sato, Motoyuki, Nakasaki, Yasushi, Watanabe, Koji, Aoyama, Tomonori, Hasegawa, Eiji, Koyama, Masato, Sekine, Katsuyuki, Eguchi, Kazuhiro, Saito, Masaki, Tsunashima, Yoshitaka

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Impact of metal gate electrode on Weibull distribution of TDDB in HfSiON gate dielectrics von Hirano, I., Nakasaki, Y., Fukatsu, S., Masada, A., Mitani, Y., Goto, M., Nagatomo, K., Inumiya, S., Sekine, K.

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Influence of pre-existing and generated traps on reliability in HfSiON/SiO2 stacks with fluorine incorporation von Hirano, I., Yamaguchi, T., Yasushi Nakasaki, Sekine, K., Mitani, Y.

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Water absorption properties of fluorine-doped SiO2 films using plasma-enhanced chemical vapor deposition von MIYAJIMA, H, KATSUMATA, R, NAKASAKI, Y, NISHIYAMA, Y, HAYASAKA, N

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Electromigration in a single crystalline submicron width aluminum interconnection von SHINGUBARA, S, NAKASAKI, Y, KANEKO, H

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High-Performance SiOF Film Fabricated Using a Dual-Frequency-Plasma Chemical Vapor Deposition system von Yoda, Takashi, Fujita, Keiji, Miyajima, Hideshi, Nakata, Rempei, Nishiyama, Yukio, Nakasaki, Yasushi, Hayasaka, Nobuo

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Atomic-scale theory on degradation of HfSiON gate stacks by atomic hydrogen accompanied by its interaction with oxygen vacancy and substitutional nitrogen von Nakasaki, Yasushi, Hirano, Izumi, Kato, Koichi, Mitani, Yuuichiro

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Erratum to “Atomic-scale theory on degradation of HfSiON gate stacks by atomic hydrogen accompanied by its interaction with oxygen vacancy and substitutional nitrogen” [Microelectr... von Nakasaki, Yasushi, Hirano, Izumi, Kato, Koichi, Mitani, Yuuichiro

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Tunneling current modulation by Ge incorporation into Si oxide films for flash memory applications von Ito, Toshihide, Mitani, Yuuichiro, Nakasaki, Yasushi, Koike, Masahiro, Konno, Takuya, Matsuba, Hiroshi, Kai, Tetsuya, Kaneko, Wakana, Ozawa, Yoshio

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Self-aligned passivation on copper interconnection durability against oxidizing ambient annealing von ITOW, H, NAKASAKI, Y, MINAMIHABA, G, SUGURO, K, OKANO, H

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Influence of Hydrogen on Reliability in Si Devices von Mitani, Yuichiro, Seki, Harumi, Nakasaki, Yasushi

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Surface Reactions of Low-k Material during Plasma Processing von KURIHARA, Kazuaki, NAKASAKI, Yasushi

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