P068 Leukemia cells produce brain-derived neurotrophic factor (BDNF), which induces regulatory T cells von Yoshida, Y., Song, Y., Nakanisi, T.

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The growth and characterization of high quality MOVPE GaAs and GaAlAs von Nakanisi, T.

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Room-temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition von Ishikawa, Masayuki, Ohba, Yasuo, Sugawara, Hideto, Yamamoto, Motoyuki, Nakanisi, Takatosi

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Direct Matrix-Assisted Laser Desorption/Ionization Time-of-Flight Mass Spectrometric Identification of Proteins on Membrane Detected by Western Blotting and Lectin Blotting von Ohtsu, Iwao, Nakanisi, Tsuyoshi, Furuta, Masaru, Ando, Eiji, Nishimura, Osamu

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A study of p-type doping for AlGaInP grown by low-pressure MOCVD von Ohba, Y., Nishikawa, Y., Nozaki, C., Sugawara, H., Nakanisi, T.

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Growth of high-purity GaAs epilayers by MOCVD and their applications to microwave MESFET's von Nakanisi, T., Udagawa, T., Tanaka, A., Kamei, K.

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Effects of growth parameters on layer properties for InP and related alloys grown by MOCVD von Eguchi, K., Ohba, Y., Kushibe, M., Funamizu, M., Nakanisi, T.

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Room-temperature cw operation of InGaP/InGaAIP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition von ISHIKAWA, M, OHBA, Y, SUGAWARA, H, YAMAMOTO, M, NAKANISI, T

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Mechanism of fe impurity incorporation into semi-insulating gaas crystals von Udagawa, T., Tanaka, A., Nakanisi, T.

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Photothermal ionization identification of sulfur donors in GaAs von Low, T. S., Stillman, G. E., Nakanisi, T., Udagawa, T., Wolfe, C. M.

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Growth of high-quality inGaAIP epilayers by MOCVD using methyl metalorganics and their application to visible semiconductors lasers von Ohba, Y., Ishikawa, M., Sugawara, H., Yamamoto, M., Nakanisi, T.

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10D6：Infiltrative malignant tumor of the mandibule demonstrating a variable histologic features von Tajima Y, Ohno J, Utsumi N, Nakanisi T, Abe T, Shimada J, Yamamoto Y

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Band discontinuity for GaAs/AlGaAs heterojunction determined by C-V profiling technique von WATANABE, M. O, YOSHIDA, J, MASHITA, M, NAKASANI, T, HOJO, A

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Growth temperature dependent atomic arrangements and their role on band-gap of InGaAlP alloys grown by MOCVD von Nozaki, C., Ohba, Y., Sugawara, H., Yasuami, S., Nakanisi, T.

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An Internal Friction Study on the Alloying Behaviour of Au-GaAs Contact von Nakanisi, Takatosi

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Mechanism of Iron Impurity Incorporation Into Semi-Insulating GaAs Crystals von Udagawa, T, Tanaka, A, Nakanisi, T

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Doping and Energy Levels of Si and Ge in GaAs Grown from Vapour Phase von Nakanisi, Takatosi

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Metalorganic vapor phase epitaxy 1988: proceedings/4th international conference on metal organic vapor phase epitaxy, Hakone, Japon, May 16-20, 1988 von WATANABE, N, NAKANISI, T, DAPKUS, P. D

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Effect of Cr Concentration on Electrical Properties of Cr-Doped Semi-Insulating GaAs Substrates von Udagawa, Takashi, Nakanisi, Takatosi

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Modulation-doped In0.5Al0.5P/GaAs field-effect transistors von OHBA, Y, WATANABE, M. O, KAWASAKI, H, KAMEI, K, NAKANISI, T

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