Contact resistivity reduction through interfacial layer doping in metal-interfacial layer-semiconductor contacts von Gupta, Shashank, Paramahans Manik, Prashanth, Kesh Mishra, Ravi, Nainani, Aneesh, Abraham, Mathew C., Lodha, Saurabh

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Germanium oxynitride gate interlayer dielectric formed on Ge(100) using decoupled plasma nitridation von Bhatt, Piyush, Chaudhuri, Krishnakali, Kothari, Shraddha, Nainani, Aneesh, Lodha, Saurabh

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Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height von Lin, J.-Y. Jason, Roy, Arunanshu M., Nainani, Aneesh, Sun, Yun, Saraswat, Krishna C.

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Impact of fixed charge on metal-insulator-semiconductor barrier height reduction von Hu, Jenny, Nainani, Aneesh, Sun, Yun, Saraswat, Krishna C., Philip Wong, H.-S.

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High-Mobility Ge N-MOSFETs and Mobility Degradation Mechanisms von Kuzum, Duygu, Krishnamohan, Tejas, Nainani, Aneesh, Yun Sun, Pianetta, Piero A, Wong, H.-S Philip, Saraswat, Krishna C

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Enhanced Ge n+/p Junction Performance Using Cryogenic Phosphorus Implantation von Bhatt, Piyush, Swarnkar, Prashant, Misra, Abhishek, Biswas, Jayeeta, Hatem, Christopher, Nainani, Aneesh, Lodha, Saurabh

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High Performance 400 °C p+/n Ge Junctions Using Cryogenic Boron Implantation von Bhatt, Piyush, Swarnkar, Prashant, Basheer, Firdous, Hatem, Christopher, Nainani, Aneesh, Lodha, Saurabh

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Fluorine passivation of vacancy defects in bulk germanium for Ge metal-oxide-semiconductor field-effect transistor application von Jung, Woo-Shik, Park, Jin-Hong, Nainani, Aneesh, Nam, Donguk, Saraswat, Krishna C.

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Enhancing hole mobility in III-V semiconductors von Nainani, Aneesh, Bennett, Brian R., Brad Boos, J., Ancona, Mario G., Saraswat, Krishna C.

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Device quality Sb-based compound semiconductor surface: A comparative study of chemical cleaning von Nainani, Aneesh, Sun, Yun, Irisawa, Toshifumi, Yuan, Ze, Kobayashi, Masaharu, Pianetta, Piero, Bennett, Brian R., Brad Boos, J., Saraswat, Krishna C.

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InxGa1-xSb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design von Nainani, Aneesh, Yuan, Ze, Krishnamohan, Tejas, Bennett, Brian R., Boos, J. Brad, Reason, Matthew, Ancona, Mario G., Nishi, Yoshio, Saraswat, Krishna C.

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Performance Improvement of One-Transistor DRAM by Band Engineering von Pal, A., Nainani, A., Gupta, S., Saraswat, K. C.

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Amelioration of interface state response using band engineering in III-V quantum well metal-oxide-semiconductor field-effect transistors von Yuan, Ze, Nainani, Aneesh, Bennett, Brian R., Brad Boos, J., Ancona, Mario G., Saraswat, Krishna C.

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Study of piezoresistance under unixial stress for technologically relevant III-V semiconductors using wafer bending experiments von Nainani, Aneesh, Yum, Jung, Barnett, Joel, Hill, Richard, Goel, Niti, Huang, Jeff, Majhi, Prashant, Jammy, Raj, Saraswat, Krishna C.

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Optimization of the \hbox\hbox/ \hbox Interface and a High-Mobility GaSb pMOSFET von Nainani, A., Irisawa, T., Ze Yuan, Bennett, B. R., Boos, J. B., Nishi, Y., Saraswat, K. C.

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on-State Performance Enhancement and Channel-Direction-Dependent Performance of a Biaxial Compressive Strained \hbox\hbox Quantum-Well pMOSFET Along \langle \hbox \rangle and \lang... von Se-Hoon Lee, Nainani, Aneesh, Jungwoo Oh, Kanghoon Jeon, Kirsch, Paul D, Majhi, Prashant, Register, Leonard Franklin, Banerjee, Sanjay K, Jammy, Raj

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Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer von Paramahans Manik, Prashanth, Kesh Mishra, Ravi, Pavan Kishore, V., Ray, Prasenjit, Nainani, Aneesh, Huang, Yi-Chiau, Abraham, Mathew C., Ganguly, Udayan, Lodha, Saurabh

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Optimization of the Al2O3/GaSb Interface and a High-Mobility GaSb pMOSFET von NAINANI, Aneesh, IRISAWA, Toshifumi, ZE YUAN, BENNETT, Brian R, BRAD BOOS, J, NISHI, Yoshio, SARASWAT, Krishna C

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Epitaxially Defined FinFET: Variability Resistant and High-Performance Technology von Mittal, Sushant, Gupta, Shashank, Nainani, Aneesh, Abraham, Mathew C., Schuegraf, Klaus, Lodha, Saurabh, Ganguly, Udayan

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Antimonide-Based Heterostructure p-Channel MOSFETs With Ni-Alloy Source/Drain von Ze Yuan, Kumar, Archana, Chien-Yu Chen, Nainani, Aneesh, Bennett, Brian R., Boos, John Brad, Saraswat, Krishna C.

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