High-quality AlN film grown on a nanosized concave–convex surface sapphire substrate by metalorganic vapor phase epitaxy von Yoshikawa, Akira, Nagatomi, Takaharu, Morishita, Tomohiro, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

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Application of focused ion-beam sampling for sidewall-roughness measurement of free-standing sub-μm objects by atomic force microscopy von Nagatomi, Takaharu, Nakao, Tatsuya, Fujimoto, Yoko

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Fine structure of spectrum of secondary electron, 5: metals and their compounds von Hashimoto, Satoshi, Sakurada, Tsuguo, Goto, Keisuke, Tanuma, Shigeo, Nagatomi, Takaharu

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Surface Excitations in Surface Electron Spectroscopies Studied by Reflection Electron Energy-Loss Spectroscopy and Elastic Peak Electron Spectroscopy von NAGATOMI, Takaharu, TANUMA, Shigeo

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FIB-SEM Technology Supporting Industry von Nagatomi, Takaharu

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Improvement in Discharge Delay Time by Accumulating Positive Wall Charges on Cathode MgO Protective Layer Surface in Alternating-Current Plasma Display Panels von Yoshino, Kyohei, Nagatomi, Takaharu, Morita, Yukihiro, Oue, Toshiyasu, Kosugi, Naoki, Nishitani, Mikihiko, Kitagawa, Masatoshi, Takai, Yoshizo

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Pseudomorphic growth of a thin-GaN layer on the AlN single-crystal substrate using metal organic vapor phase epitaxy von Yoshikawa, Akira, Nagatomi, Takaharu, Nagase, Kazuhiro, Sugiyama, Sho, Schowalter, Leo J.

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Effects of Wall Charge on Firing Voltage and Statistical Delay Time in Alternating-Current Plasma Display Panels von Yoshino, Kyohei, Nagatomi, Takaharu, Morita, Yukihiro, Oue, Toshiyasu, Kosugi, Naoki, Nishitani, Mikihiko, Kitagawa, Masatoshi, Takai, Yoshizo

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Accumulation and Decay Characteristics of Exoelectron Sources at MgO Protective Layer Surface in Alternating-Current Plasma Display Panels von Yoshino, Kyohei, Nagatomi, Takaharu, Morita, Yukihiro, Oue, Toshiyasu, Kosugi, Naoki, Nishitani, Mikihiko, Kitagawa, Masatoshi, Takai, Yoshizo

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Introduction of activities for standardization of electron spectroscopies in ISO/TC 201 -Activities related to ISO/TC 201/SC 4 and 7 von Nagatomi, Takaharu

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Metal organic vaper phase epitaxy growth of high-quality AlInSb using tritertiarybutylaluminum and tris(dimethylamino)antimony sources von Yoshikawa, Akira, Moriyasu, Yoshitaka, Nagatomi, Takaharu, Kuze, Naohiro

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Improvement in Discharge Delay Time by Accumulating Positive Wall Charges on Cathode MgO Protective Layer Surface in Alternating-Current Plasma Display Panels von Yoshino, Kyohei, Nagatomi, Takaharu, Morita, Yukihiro, Oue, Toshiyasu, Kosugi, Naoki, Nishitani, Mikihiko, Kitagawa, Masatoshi, Takai, Yoshizo

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Evaluation of Time-of-Flight Secondary Ion Mass Spectrometry Spectra of Peptides by Random Forest with Amino Acid Labels: Results from a Versailles Project on Advanced Materials an... von Aoyagi, Satoka, Fujiwara, Yukio, Takano, Akio, Vorng, Jean-Luc, Gilmore, Ian S, Wang, Yung-Chen, Tallarek, Elke, Hagenhoff, Birgit, Iida, Shin-ichi, Luch, Andreas, Jungnickel, Harald, Lang, Yusheng, Shon, Hyun Kyong, Lee, Tae Geol, Li, Zhanping, Matsuda, Kazuhiro, Mihara, Ichiro, Miisho, Ako, Murayama, Yohei, Nagatomi, Takaharu, Ikeda, Reiko, Okamoto, Masayuki, Saiga, Kunio, Tsuchiya, Toshihiko, Uemura, Shigeaki

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Two-Inch Aluminum Nitride (AIN) Single Crystal Growth for Commercial Applications von Bondokov, Robert T, Branagan, Sean P., Ishigami, Naoki, Grandusky, James, Nagatomi, Takaharu, Tatsuta, Kazuo, Miebach, Thomas, Chen, Jianfeng (Jeff)

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A Memorial Web Discussion for Dr. Hideo Iwai von Kimura, Takashi, Sanada, Noriaki, Tanuma, Shigeo, Nagatomi, Takaharu, Yanagiuti, Katuaki

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44.3: Investigation of Effects of Heating in Air on Ionization Potential of MgO and CaO Films using Metastable De-excitation Spectroscopy von Yoshino, Kyohei, Morita, Yukihiro, Nagatomi, Takaharu, Terauchi, Masaharu, Tsujita, Takuji, Doi, Yukako, Nakayama, Takahito, Yamauchi, Yasuhiro, Nishitani, Mikihiko, Kitagawa, Masatoshi, Takai, Yoshizo, Yamauchi, Yasushi

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Energy Distribution of Ion-Induced Secondary Electrons from MgO Surface von Tsujita, Takuji, Nagatomi, Takaharu, Takai, Yoshizo, Morita, Yukihiro, Nishitani, Mikihiko, Kitagawa, Masatosi, Uenoyama, Takeshi

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Analysis of Dopant Concentration in Semiconductor Using Secondary Electron Method von Mizuhara, Yuzuru, Kato, Junpei, Nagatomi, Takaharu, Takai, Yoshizo, Inoue, Masahiko

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Ar cluster ion beam sputtering of InSb investigated by ToF-SIMS von Miyasaka, Toyomitsu, Yamauchi, Takeshi, Nagatomi, Takaharu, Kono, Teiichiro

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Versailles Project on Advanced Materials and Standards interlaboratory study on intensity calibration for x-ray photoelectron spectroscopy instruments using low-density polyethylen... von Reed, Benjamen P., Cant, David J. H., Spencer, Steve J., Carmona-Carmona, Abraham Jorge, Bushell, Adam, Herrera-Gómez, Alberto, Kurokawa, Akira, Thissen, Andreas, Thomas, Andrew G., Britton, Andrew J., Bernasik, Andrzej, Fuchs, Anne, Baddorf, Arthur P., Bock, Bernd, Theilacker, Bill, Cheng, Bin, Castner, David G., Morgan, David J., Valley, David, Willneff, Elizabeth A., Smith, Emily F., Nolot, Emmanuel, Xie, Fangyan, Zorn, Gilad, Smith, Graham C., Yasufuku, Hideyuki, Fenton, Jeffery L., Chen, Jian, Counsell, Jonathan D. P., Radnik, Jörg, Gaskell, Karen J., Artyushkova, Kateryna, Yang, Li, Zhang, Lulu, Eguchi, Makiho, Walker, Marc, Hajdyła, Mariusz, Marzec, Mateusz M., Linford, Matthew R., Kubota, Naoyoshi, Cortazar-Martínez, Orlando, Dietrich, Paul, Satoh, Riki, Schroeder, Sven L. M., Avval, Tahereh G., Nagatomi, Takaharu, Fernandez, Vincent, Lake, Wayne, Azuma, Yasushi, Yoshikawa, Yusuke, Shard, Alexander G.

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